Evaluation of the Properties of Si3N4/Si3N4 Joint Brazed Using a Filler Alloy Containing Pd

Si3N4 ceramic was jointed to itself using a filler alloy of Cu76.5Pd8.5Ti15, and the mechanical properties of the jointwere measured and analyzed. By using a filler alloy of Cu76.5Pd8.5Ti15, the SisN4/SisN4 joints were obtained bybrazing at 1373～1473 K f     

Transmission distance of in-line amplifier systems withgroup-velocity-dispersion compensation

Group-velocity dispersion (GVD) compensation in in-line amplifier systems is evaluated from the viewpoint of improving the transmission distance. The nonlinear Schrodinger equation, which simulates signal propagation in optical fibers, is numerically evaluated to clarify the optimum configuration for GVD compensation. It is shown that the optimum amount of GVD compensation is about 100% of the GVD experienced by the transmitted signal. The optimum compensation interval is found to be a function of the bit rate, signal power, and dispersion parameter. For dispersion parameter values ranging from about -0.1 ps/nm/km to -10 ps/nm/km, and an amplifier noise figure of about 6 dB, the optimum compensation configuration can eliminate the GVD from in-line amplifier systems, thus improving transmission distances to those limited by self-phase modulation and higher-order GVD     

Fibre transmission distance determined by eye opening degradation due to selfphase modulation and group-velocity dispersion

Numerical analysis of IM signal propagation in an optical fibre is carried out taking selfphase modulation and group-velocity dispersion into account. The transmission distance yielding a prescribed eye opening penalty, in the normal dispersion region, is shown to be inversely proportional to the square root of the signal power.<>     

Hydrothermal synthesis and in situ surface modification of boehmite nanoparticles in supercritical water

In situ surface modification of boehmite (AlOOH) nanoparticles during hydrothermal synthesis in supercritical water was examined by adding CH₃(CH₂)₄CHO and CH₃(CH₂)₅NH₂ as modifier reagents to the reactants. Changes in surface properties of the nanoparticles by surface modification was observed by FTIR, dispersion in solvents and TEM analyses, which demonstrated that reagents chemically binded onto the surface of the AlOOH nanoparticles. The results of SEM and TEM pictures show that the surface modification affects crystal growth and reduces the particle size and changes the morphology of the particles.     

Synthesis of boron nitride from triammoniadecaborane and hydrazine under pressure

Boron nitride (BN) of low crystallinity was synthesized from triammoniadecaborane (TAD) and hydrazine at 125 MPa below 650° C. TAD itself was pyrolysed at 600° C and 125 MPa to form a mixture of amorphous boron and boron nitride containing BH and NH bonds. The infrared spectrum of the pyrolysed product of TAD itself at 600° C and 125 MPa showed the BNB absorption at 800cm^–1 due to the formation of B₃N₃ structures. The X-ray diffraction (XRD) of the reaction product from TAD and hydrazine at 600° C had broad diffractions centred at 2=25.5° and 43.0° (CuK). The BH absorption at 2500cm^–1 decreased in intensity on increasing the N/B ratio from 0.3 to 0.85, and disappeared finally at a ratio of N/B=1.3. The reaction product at 125 MPa had a porous structure. The electron diffraction of the specimen changed from faint rings to spots on circular rings after heat treatment at 800° C for 10 h. The heat-treated specimen, however, did not give sharp reflections corresponding to hexagonal BN in the XRD profile. BN of low crystallinity was transferred to cubic BN at 1200° C and 6.5 GPa in a 90% yield, which was higher than that of well-crystallized BN in the presence of AIN.     

Preparation of TiB2 sintered compacts by hot pressing

A sintered compact of titanium diboride (TiB₂) was prepared by hot pressing of the synthesized TiB₂ powder, which was obtained by a solid-state reaction between TiN and amorphous boron. Densification of the sintered compact occurred at 20 MPa and 1800° C for 5 to 60 min with the aid of a reaction sintering, including the TiB₂ formation reaction between excess 20 at % amorphous boron in the as-synthesized powder (TiB₂ + 0.2B) and intentionally added 10 at % titanium metal. A homogeneous sintered compact of a single phase of TiB₂, which was prepared by hot pressing for 30 min from the starting powder composition [(TiB₂ + 0.2B) + 0.1 Ti], had a fine-grained microstructure composed of TiB₂ grains with diameters of 2 to 3 m. The bulk density was 4.47 g cm^–3, i.e. 98% of the theoretical density. The microhardness, transverse rupture strength and fracture toughness of the TiB₂ sintered compact were 2850 kg mm^–2, 48 kg mm^–2 and 2.4 MN m^–3/2, respectively. The thermal expansion coefficient increased with increasing temperature up to 400° C and had a constant value of 8.8 x 10^–6 deg^–1 above 500° C.     

Transflective IPS‐LCD with improved reflective contrast ratio

Abstract— In order to improve the reflective contrast ratio of transflective IPS‐LCDs, a novel pixel design for a normally white reflective IPS has been proposed. In this design, the large‐inter‐electrode‐spacing layout using a novel driving method and a double‐layered electrode have effectively reduced the light leakage. By applying these two technologies, a transflective IPS‐LCD has been successfully demonstrated with a high contrast ratio (15:1) in the reflective mode and a wide‐viewing‐angle characteristic in the transmissive mode.     

Effects of heated seats in vehicles on thermal comfort during the initial warm-up period

Eight subjects participated in a subjective experiment of eight conditions to investigate the effects of heated seats in vehicles on skin temperature, thermal sensation and thermal comfort during the initial warm-up period. The experimental conditions were designed as a combination of air temperature in the test room (5, 10, 15, or 20 °C) and heated seat (on/off). The heated seat was effective for improving thermal comfort during the initial warm-up period when air temperature was lower than 15 °C. Use of heated seats prevented decreases in or increased toe skin temperature. Heated seats also increased foot thermal sensation at 15 and 20 °C. Optimal thermal sensation in contact with the seat was higher when air temperature was lower. Optimal skin temperature in contact with the seat back was higher than that with the seat cushion. Moreover, these optimal skin temperatures were higher when air temperature was lower.     

Efficient electron transport in 4,4′-bis[N-(1-napthyl)-N-phenyl-amino] biphenyl and the applications in white organic light emitting devices

The electron transport capability of 4,4′-bis[N-(1-napthyl)-N-phenyl-amino] biphenyl (α-NPD) was investigated by fundamental physical measurements named as current–voltage (I–V) electrical property evaluation and displacement current measurement (DCM). In electron-dominated devices, the I–V characteristics of α-NPD were similar as that of (8-hydroxyquinolino) aluminum (Alq₃) owing to their same order of electron mobilities. The interface of Al/LiF and α-NPD was proven to be an Ohmic contact through the evaluation of I–V characteristics at low bias regime (<3 V). And an electron injection barrier, 0.21 eV, at Al/LiF/α-NPD was obtained by extrapolating the temperature dependent I–V curves. The electron transport behavior in α-NPD film was further confirmed by DCM evaluations. Furthermore, an efficient white organic light emission device was successfully fabricated by using α-NPD as hole transport layer and electron transport layer, respectively.     

Phase reaction and diffusion path of the SiC/Ti system

Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373 to 1773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a thickness of 50 μm. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti₅Si₃C _x and TiC at the SiC side were formed, yielding the structure sequence of β-Ti/Ti+TiC/Ti₅Si₃C _x +TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti₅Si₃C _x layer phase appeared between SiC and the mixture of Ti₅Si₃C _x and TiC. Upon the formation of Ti₃SiC₂ (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: β-Ti/Ti+TiC/Ti₅Si₃C _x +TiC/Ti₅Si₃C _x /Ti₃SiC₂/SiC. The activation energies for growth of TiC, Ti₅Si₃C _x , and Ti₃SiC₂ were 194, 242, and 358 kJ/mol, respectively.