排序方式: 共有106条查询结果,搜索用时 15 毫秒
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讨论了2个流水蝶形单元并行的地址映射算法.由于FFT级间数据读写关系复杂,实现每次并行执行2个蝶式运算的地址产生非常复杂.通过对基2数据流图的改造,将存储器分为2个存储体,各级每个蝶式运算的1对操作数位于同一存储体,并行执行的2对操作数位于不同存储体相同地址,计算结果按原址写回,同时每次计算所需的2个旋转因子地址间存在一定关系,因而可用1个地址产生单元,实现2条流水线并行所需的操作数及旋转因子的并行访问.本地址产生单元易于实现,资源需求少、延时较小,且可使蝶式计算循环次数减少一半. 相似文献
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氧化层的经时击穿是集成电路中一个非常重要的问题.从理论上分析了氧化层经时击穿的电子俘获击穿机理,给出了相关的物理模型,同时指出了一些物理模型中存在的问题,为进一步研究氧化层的经时击穿机理及氧化层经时击穿可靠性的建模提供了理论依据. 相似文献
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The characteristics of a low-voltage triggering silicon-controlled rectifier(LVTSCR) under a transmission line pulse(TLP) and the characteristics of high frequency are analyzed.The research results show that the anode series resistance has a significant effect on the key points of the snapback curve.The device characteristics can fit the requirements of a electrostatic discharge(ESD) design window by adjusting the anode series resistance. Furthermore,the set-up time of the ESD has an influence on the turn-on voltage of the LVTSCR.A steep rising edge will cause the turn-on voltage to increase.The parasitic capacitance of the device for different voltage biases and frequencies determines the capacitive impedance,and its accuracy calculation is very important to the ESD design of high frequency circuits.Our research results provide a theoretical basis for the design of an ultra-deep sub-micron(UDSM) LVTSCR structure under ESD stress and the improvement of TLP test technology. 相似文献
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To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator(SGOI) n-type metal-oxide-semiconductor field-effect transistors(nMOSFETs),this paper proposes a novel device called double step buried oxide(BOX) SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently. 相似文献
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基干静电敲电应力下对深亚微米硅化物工艺栅接地NMOSFET的研究,考虑了源/漏寄生串连电阻的影响,建立了源/漏接触区的电流集中模型.由模型分析表明,不同的温度和掺杂条件下,源/漏寄生串连电阻会引起器件源/漏接触前端边缘附近产生不同程度的电流集中.在器件源端产生新的热点.影响了源/满端的击穿特性.很好地解释了栅接地NMOSFET的源端热击穿机理. 相似文献
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可变长FFT并行旋转因子高效产生算法及实现 总被引:1,自引:0,他引:1
为了解决FFT处理并行旋转因子产生复杂、所需存储资源多的问题,该文在分体存储器结构的基础上,提出了一种新的旋转因子存储、访问策略.该策略保证混合基4/2 FFT算法每个蝶式运算所需的3个旋转因子均可无冲突并行访问,且在同一个旋转因子查找表的基础上,使计算任意小于最大可处理长度的FFT时,各级访问旋转因子地址的产生仅与最大可处理长度有关,而与当前处理长度无关.该算法仅用一个可移位累加数寄存器,实现计算过程中旋转因子地址产生的级间切换,且使一个存储体容量及访问次数减少了一半以上. 相似文献
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对热载流子导致的 SIMOX衬底上的部分耗尽 SOI NMOSFET's的栅氧化层击穿进行了系统研究 .对三种典型的热载流子应力条件造成的器件退化进行实验 .根据实验结果 ,研究了沟道热载流子对于 SOI NMOSFET's前沟特性的影响 .提出了预见器件寿命的幂函数关系 ,该关系式可以进行外推 .实验结果表明 ,NMOSFET's的退化是由热空穴从漏端注入氧化层 ,且在靠近漏端被俘获造成的 ,尽管电子的俘获可以加速 NMOSFET's的击穿 .一个 Si原子附近的两个 Si— O键同时断裂 ,导致栅氧化层的破坏性击穿 .提出了沟道热载流子导致氧化层击穿的新物理机制 相似文献