基于Timoshenko梁理论的斜置隔振系统功率流特性分析

针对工程中常见的斜置隔振装置,建立了复杂振源激励、粘弹性斜置支承与基础梁结构三维耦合隔振系统动力学模型。把隔振器模化为Timoshenko梁,给出了梁纵向、弯曲振动导纳。引入粘弹性分数导数模型来描述粘弹性隔振器的动态特性,并考虑隔振支承多维波动效应,推导了耦合系统动态特性传递矩阵及功率流表达式。数值模拟计算表明,粘弹性隔振器是频率相关的;隔振器高频共振形成驻波是输入系统功率下降趋势变缓的主要原因;在中高频域,输人基础的功率随倾斜角增大而降低。     

主被动联合隔振系统中的功率流传递特性

被动和主动隔振各有优势，主被动联合隔振是隔振研究的方向。针对船舰、高层建筑等柔性基础结构的振动隔离问题，以传递到柔性基础的功率流为目标函数，运用子结构导纳综合法推求主被动隔振的功率流传递控制式，对结构进行优化设计。探讨了两种主被动联合隔振的控制策略，最后通过模拟系统的数值例子得出了几个结论。     

集成电路及系统设计实践教学的研究和改革

阐述了在集成电路设计实践教学中如何结合最新的EDA(电子设计自动化)工具,提高学生的实际设计应用水平。就集成电路设计教学参考流程的建立、实践教学内容和方法的确定、软硬件实践教学环境的建设进行了讨论。     

刚柔耦合动力系统固有振动特性研究

针对柔性基础上马达的隔振设计问题,建立了刚柔耦合机械系统的动力学方程,对机器基础的模态耦合振动和固有频率偏移进行了数值计算和试验研究。研究结果表明,耦合系统的基频小于机器的安装频率;在高频段,柔性基础模态为耦合系统的主导模态。     

一种适合射频功率放大器应用的图形化SOI LDMOSFET新结构

设计并制备了一种新颖的在栅下开硅窗口的图形化SOI LDMOSFET．该器件具有良好的直流和射频特性：输出曲线平滑,没有明显翘曲（kink）效应;静态击穿电压为13V;在栅漏偏压为3．6V时,截至频率为6GHz．负载牵引测试表明,该器件在1．5GHz时,PAE为50％,输出功率为27dBm,表明该器件适合射频功率放大器的应用．     

一种完整且精确的化合物半导体HEMT器件大信号模型

A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.     

射频无线应用的体连接和图形化SOI LDMOSFET的比较

设计并制作了一种可应用于无线通信放大器的新型的图形化SOI LDMOSFET. 该器件沟道下方的埋氧层是断开的.测试表明，输出特性曲线没有发现明显的翘曲效应，关态的击穿电压达13V，在VG=4V和VD=3.6V时fT为8GHz，直流和射频性能均优于同一芯片上相同工艺条件制备的体接触LDMOSFET.     

射频CMOS建模：不同栅指数目的RF-MOSFET可缩放模型

本文提出了一个新颖的不同指头数目的RF-MOSFET可缩放模型。所有的寄生参量包含栅极电阻,衬底电阻,寄生电容等的计算都直接可以从实际器件版图当中获取。该模型通过典型 0.13μm RF-CMOS工艺制造的不同栅指数的NMOSFET,其中栅长为固定值2.5μm,栅宽为固定值0.13μm,对模型在100MHz~20.05GHz频率范围内小信号S参数进行了验证和比较。测试与仿真数据得到了很好的吻合,这表明我们的模型是精确而且有效的。     

中国船舶远程识别与跟踪系统（LRIT）

本文介绍了中国船舶远程识别和跟踪系统（LRIT）建设的相关背景，重点介绍中国LRIT系统的建设内容．系统组成和典型应用．并说明系统完成情况．提醒船东为满足LRIT相关要求应该注意的事项。     

一个新型的大检测电容结构的MEMS惯性传感器研究

A novel MEMS inertial sensor with enhanced sensing capacitors is developed. The designed fabricated process of the sensor is a deep RIE process, which can increase the mass of the seismic to reduce the mechanical noise, and the designed capacitance sensing method is changing the capacitance area, which can reduce the air damping between the sensing capacitor plates and reduce the requirement for the DRIE process precision, and reduce the electronic noise by increasing the sensing voltage to improve the resolution. The design and simulation are also verified by using the FEM tool ANSYS. The simulated results show that the transverse sensitivity of the sensor is approximately equal to zero. Finally, the fabricated process based on silicon-glass bonding and the preliminary test results of the device for testing grid capacitors and the novel inertial sensor are presented. The testing quality factor of the testing device based on the slide-film damping effect is 514, which shows that the enhanced capacitors can reduce mechanical noise. The preliminary testing result of the sensitivity is 0.492pf/g.