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71.
72.
The ITER magnet system consists of structurally linked sets of toroidal (TF) and poloidal (PF) field coils, central solenoid (CS), and various support structures. The coils are superconducting, force flow Helium cooled with a Kapton-Glass-Epoxy multilayer insulation system. The stored magnetic energy is about 100GJ in the TF system and 20GJ in the PF-CS. Coils and structure are maintained at 4 K by enclosing them in a vacuum cryostat. The cryostat, comprising an outer envelope to the magnets, forms most of the second radioactivity confinement barrier. The inner primary barrier is formed by the vacuum vessel, its ports and their extensions. To keep the machine size within acceptable bounds, it is essential that the magnets are in close proximity to both of the nuclear confinement barriers. The objective of the magnet design is that, although local damage to one of the barriers may occur in very exceptional circumstances, large scale magnet structural or thermal failure leading to simultaneous breaching of both barriers is not credible. Magnet accidents fall into three categories: thermal (which includes arcing arising from insulation failure and local overheating due to discharge failure in the event of a superconductor quench), structural (which includes component mechanical failure arising from material inadequacies, design errors and exceptional force patterns arising from coil shorts or control failures), and fluid (Helium release due to cooling line failure). After a preliminary survey to select initial faults conceivable within the present design, these faults are systematically analyzed to provide an assessment of the damage potential. The results of this damage assessment together with an assessment of the reliability of the monitoring and protective systems, shows that the magnets can operate with the required safety condition.  相似文献   
73.
74.
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current  相似文献   
75.
The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features  相似文献   
76.
A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any presently available. The emphasis of this paper is on describing the model's extensive features and flexibility in the different domains of operation and is of particular interest in power applications  相似文献   
77.
The capacitive idling converters derived from the Cuk, SEPIC, Zeta, and flyback topologies allow soft commutation of power switches without the need for additional circuitry, making it possible to increase the switching frequency while maintaining high efficiency  相似文献   
78.
The pipelined architecture and parallel organization of the AT&T Pixel Machine image computer are described and demonstrated with applications for the visualization of multidimensional fractals, particularly linear fractals and quaternion/ stacked Julia sets. Techniques for pushing the Pixel Machine to its peak abilities are described and apply to more recent parallel image computers as well.  相似文献   
79.
View materialization is a well-known optimization technique of relational database systems. We present a similar, yet more powerful, optimization concept for object-oriented data models: function materialization. Exploiting the object-oriented paradigm-namely, classification, object identity, and encapsulation-facilitates a rather easy incorporation of function materialization into (existing) object-oriented systems. Only those types (classes) whose instances are involved in some materialization are appropriately modified and recompiled, thus leaving the remainder of the object system invariant. Furthermore, the exploitation of encapsulation (information hiding) and object identity provides for additional performance tuning measures that drastically decrease the invalidation and rematerialization overhead incurred by updates in the object base. First, it allows us to cleanly separate the object instances that are irrelevant for the materialized functions from those that are involved in the materialization of some function result, and this to penalize only those involved objects upon update. Second, the principle of information hiding facilitates fine-grained control over the invalidation of precomputed results. Based on specifications given by the data type implementor, the system can exploit operational semantics to better distinguish between update operations that invalidate a materialized result and those that require no rematerialization. The paper concludes with a quantitative analysis of function materialization based on two sample performance benchmarks obtained from our experimental object base system GOM  相似文献   
80.
A general language for specifying resource allocation and time-tabling problems is presented. The language is based on an expert system paradigm that was developed previously by the authors and that enables the solution of resource allocation problems by using experts' knowledge and heuristics. The language enables the specification of a problem in terms of resources, activities, allocation rules, and constraints, and thus provides a convenient knowledge acquisition tool. The language syntax is powerful and allows the specification of rules and constraints that are very difficult to formulate with traditional approaches, and it also supports the specification of various control and backtracking strategies. We constructed a generalized inference engine that runs compiled resource allocation problem specification language (RAPS) programs and provides all necessary control structures. This engine acts as an expert system shell and is called expert system for resource allocation (ESRA). The performance of RAPS combined with ESRA is demonstrated by analyzing its solution of a typical resource allocation problem  相似文献   
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