首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   763121篇
  免费   3768篇
  国内免费   1624篇
电工技术   14299篇
综合类   799篇
化学工业   117196篇
金属工艺   32263篇
机械仪表   23882篇
建筑科学   17615篇
矿业工程   4712篇
能源动力   19424篇
轻工业   64170篇
水利工程   8665篇
石油天然气   16312篇
武器工业   42篇
无线电   84012篇
一般工业技术   150258篇
冶金工业   135574篇
原子能技术   18122篇
自动化技术   61168篇
  2021年   6823篇
  2020年   5422篇
  2019年   6883篇
  2018年   10828篇
  2017年   10964篇
  2016年   11832篇
  2015年   7621篇
  2014年   12605篇
  2013年   34295篇
  2012年   19708篇
  2011年   26866篇
  2010年   21598篇
  2009年   23960篇
  2008年   24826篇
  2007年   24494篇
  2006年   21578篇
  2005年   19560篇
  2004年   18678篇
  2003年   18460篇
  2002年   18113篇
  2001年   17671篇
  2000年   16729篇
  1999年   16851篇
  1998年   40259篇
  1997年   29066篇
  1996年   22554篇
  1995年   17207篇
  1994年   15520篇
  1993年   15087篇
  1992年   11486篇
  1991年   11211篇
  1990年   10785篇
  1989年   10531篇
  1988年   10201篇
  1987年   9058篇
  1986年   8849篇
  1985年   10134篇
  1984年   9153篇
  1983年   8629篇
  1982年   7854篇
  1981年   8011篇
  1980年   7656篇
  1979年   7573篇
  1978年   7492篇
  1977年   8538篇
  1976年   11280篇
  1975年   6680篇
  1974年   6391篇
  1973年   6422篇
  1972年   5529篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
41.
This paper presents a simple alternative for an electronic ballast operating in self-sustained oscillating mode with dimming capability for fluorescent lamps. A simple modification in one of the gate drivers side circuit allows the lamp to dim without compromising the simplicity, reliability, and low cost which characterize the self-oscillating electronic ballast (SOEB). A qualitative analysis is presented to explain the behavior of the proposed self-oscillating electronic ballast with dimming feature. In addition, the stability and the key equations for the design are derived using the extended Nyquist criterion and describing function method. Experimental results from two 40-W electronic ballasts are presented to demonstrate the performance and to validate the analysis carried out.  相似文献   
42.
Over the last five years, many activities have focused on the unexploited field of carrying out reactions on small scales. Due to the rapid development of new components, this paper deals with recent developments only in a compressed form. An important point is the analysis of possible plant concepts for microreactors and whether these are a sensible option. Due to the enormous difference in size between the microchannels and the fluid periphera of possible components this is not just a technical question. It touches on the microtechnology concept as a whole. The direction in which the field should be developed and which measures can be taken to influence its development are questions that are addressed here with respect to the big industrial interest in microreactors.  相似文献   
43.
While Fickian diffusion models are commonly used in other applications, there are few reports of them being applied to the batch drying of a mineral concentrate. Diffusion coefficients estimated from small-scale oven-drying tests were used to predict the drying behavior of a concentrate sample 1 m × 1 m in area and 50 cm deep, with a heated bottom pad. These pilot-scale tests included both daily turning of the sample and turning every three days. The excellent quantitative agreement between the predicted and observed pilot-scale behavior gives a high level of confidence in the model predictions and suggests that a Fickian diffusion model is adequate to predict the behavior of mineral concentrates at the low moisture contents used here.  相似文献   
44.
Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed  相似文献   
45.
The impact of crosstalk in an arrayed-waveguide N×N wavelength multiplexer is investigated precisely in relation to its application to wavelength-routing N×N all optical networks. In such systems multiple crosstalk light which has the same wavelength as the signal results in signal-crosstalk beat noise. We confirm that the noise is Gaussian and obtain the relation between crosstalk and power penalty. It is shown that the crosstalk must be less than -38 dB for a 16×16 system to keep the power penalty below 1 dB at a bit error rate of 10-9  相似文献   
46.
Known examples of the positive influence of electrohydroimpulse treatment on the quality of weld joints of various steels, particularly including an increase in their long-term and cyclic strength and also corrosion resistance, are analyzed. It is shown that in this case there is a reduction in residual macro- and micro-stresses and also a change in the parameters of the dislocation structure of the joint metal in the direction of stabilization of it.Translated from Problemy Prochnosti, No. 4, pp. 119–123, April, 1996.  相似文献   
47.
The transverse resonance approach to guided wave analysis is applied to shear horizontal (SH) wave propagation in periodically layered composites. It is found for SH waves that at high values of the guided wavevector β, the wave energy is trapped in the slower of the two media and propagates accordingly at the slower wavespeed. At low values of β, however, the modes demonstrate a clustering behavior, indicative of the underlying Floquet wave structure. The number of modes in a cluster is observed to correlate with the number of unit cells in the layered plate. New physical insights into the behavior of these systems are obtained by analyzing the partial waves of the guided SH modes in terms of Floquet waves. We show that the fast and slow shear waves in the periodically layered composite play an analogous role to the longitudinal and shear partial waves comprising Lamb waves in a homogeneous plate  相似文献   
48.
It is proved that biased estimates of parameters are always more effective than unbiased estimates in the case of asymmetric distribution laws of random quantities. Expressions are obtained for the root mean square deviation of a biased estimate of a parameter from its value for the cases of normal, Poisson, Rayleigh, and gamma distribution laws. Translated from Izmeritel'naya Tekhnika No. 11, pp. 8–13, November, 1996.  相似文献   
49.
We predict that, for wavelength division multiplexing optical-network applications, an asymmetrically dilated configuration of a 2×2 cross-connect is significantly better in terms of overall crosstalk when the levels of the bar-port crosstalk and the cross-port crosstalk are significantly different from each other, as is the case with optical-frequency filters which utilize grating-assisted coupling. As a verification, we present a simulation study with 2×2 polarization-diversified acousto-optic tunable filters. We present a recursive method to extend the principle of asymmetric dilation to larger-size cross-connect switches, and make a recommendation for an asymmetrically dilated 4×4 cross-connect configuration  相似文献   
50.
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号