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991.
992.
R. P. Voitovich Yu. V. Naidich G. A. Kolesnichenko 《Powder Metallurgy and Metal Ceramics》1992,31(6):494-497
Translated from Poroshkovaya Metallurgiya, No. 6(354), pp. 40–44, June, 1992. 相似文献
993.
S. I. Glinchak Yu. A. Egorov R. R. Aliev E. D. Radchenko B. K. Nefedov N. A. Grigor'ev 《Chemistry and Technology of Fuels and Oils》1992,28(3):175-177
Translated from Khimiya i Tekhonologiy Topliv i Masel, No. 3, pp. 33–34, March, 1992. 相似文献
994.
On the Theory of Electrical Phenomena in Combustion of Heterogeneous Systems with Condensed Products
V. K. Smolyakov A. I. Kirdyashkin Yu. M. Maksimov 《Combustion, Explosion, and Shock Waves》2002,38(6):675-680
The effect of the electromotive force arising in combustion of heterogeneous systems with condensed products is explained. A convective mechanism of arising regions with different charge densities due to charge transfer by the gas filtered in the pores is formulated on the basis of the developed physical concepts, estimates, and analysis of experimental data. Key words: combustion, electron emission, filtration, electromotive force. 相似文献
995.
Novel high voltage pumping circuits for low supply voltages are proposed. Utilising a small pumping circuit and the new substrate-connected techniques can enhance charge transfer efficiency and eliminate the body effect at low supply voltages. Furthermore, a diode-connected transistor technique can improve the reverse charge sharing phenomenon when the output has a load current. With this technique high boosted voltages can be obtained at low supply voltages 相似文献
996.
Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a series of measurements that we have performed to characterize the optical properties of the material. Specifically, we present the first measurements of the two-photon absorption coefficient and the refractive index changes as a function of the growth and annealing temperatures in LT-GaAs. Finally, we show how our model can be used to optimize the material for applications in all-optical switching 相似文献
997.
P. Kristiansson C. M. Nilsson H. Busk L. Malmqvist M. Elfman K. G. Malmqvist J. Pallon K. A. Sj land R. J. Utui C. Yang 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》1997,130(1-4):303-307
A technique for measuring optical dot gain, i.e. the relative difference between the actual screen dot and the optically perceived one, is presented. By combining measurements from the non-optical nuclear microprobe with data from image analyzing technique the optical dot gain can be determined. The procedure to reach pixel by pixel correlation on a micrometer scale is discussed. In the newsprint sample studied in this investigation a typical optical dot gain between 15 and 20% was deduced. The variation in the optical dot gain was correlated with other characteristic parameters of the print and newsprint and especially a positive correlation to the mass density of the newsprint was observed. 相似文献
998.
999.
Recent advances in control systems analysis and design have implied new uses for the Lyapunov equation of the form AX +XA T+Q =0. Implementation requirements for the incorporation of the use of Lyapunov equations in practical design, however, point out the need for a set of specialized numerical procedures. This special set of numerical procedures must efficiently solve large, sparse Lyapunov equations, solve sets of Lyapunov equations that differ only in the coefficient matrix Q , and provide good low rank estimates of the Lyapunov equation solution X in the case where low rank approximations are applicable. Discussions of the motivations for the solution of these problems and of candidate solution approaches are provided 相似文献
1000.
Low-temperature interface reaction in aluminium-silicon carbide particulate composites produced by mechanical alloying 总被引:1,自引:0,他引:1
An experimental investigation has been carried out on the reaction that takes place between 3 and 20 μm SiC particles and
the aluminium alloy 1050 matrix of composite materials prepared by a mechanical alloying process. The work is different from
that undertaken by other researchers in that the SiC-Al interface reaction has been studied in the temperature range 853–933
K, i.e., with the matrix initially in the solid state. Differential thermal analysis, X-ray diffraction and scanning electron
microscopy all show that the SiC-Al reaction initiates in the solid state at temperatures as low as 883 K. The reaction produces
Al4C3 and Si, the latter entering into solid solution in the aluminium matrix. At temperatures exceeding 903 K, the reaction
produces a liquid phase and at this stage the speed of the interface reaction increases significantly. The results are discussed
in terms of Al-Si-C metastable equilibrium and the kinetics of the reaction.
This revised version was published online in November 2006 with corrections to the Cover Date. 相似文献