A variable-gain amplifier with very low power consumption and wide tuning range is presented. The operational principle of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by simulation in TSMC 0.18-μm N-well CMOS fabrication process. Owing to the novel zero-pole repositioning technique, the proposed circuit demonstrates very high frequency bandwidth of 79 MHz while drawing only 0.52 mA from 1.8 V power supply. The interesting results such as a very small core area of about 0.0025 mm2 as well as a wide linear-in-dB and constant-bandwidth tuning range of 68.2 dB along with a very low power consumption of 0.95 mW are achieved utilizing standard CMOS technology. The stability of the proposed VGA is verified through transient sinusoidal response analysis. Full process, voltage and temperature (PVT) variation analysis of the circuit is also investigated through Monte Carlo and corner case analysis in order to approve the robustness of the structure. Monte Carlo simulations show standard deviation values of 4.6 dB and 78.3 MHz in gain and gain-bandwidth product, respectively. These results show that our zero-pole repositioning method would lend itself well for use in low-power and high-frequency applications, especially in high-speed automatic gain control amplifiers. 相似文献
Semiconductors - Thin films of AlN:Tm are deposited on a Si(111) and Si(100) substrates and optical fiber by rf magnetron sputtering method. 200–400 nm thick films are deposited at various... 相似文献
As per the most recent literature, Orthogonal Frequency Division Multiplexing (OFDM), a multi access technique, is considered most suitable for the 3G, 4G and 5G techniques in high speed wireless communication. What made OFDM most popular is its ability to deliver high bandwidth efficiency and superior data rate. Besides it, high value of peak to average power ratio (PAPR) and Inter Carrier Interference (ICI) are the challenges to tackle down via appropriate mitigation scheme. As a research contribution in the present work, an improved self-cancellation (SC) technique is designed and simulated through Simulink to mitigate the effect of ICI. This novel proposed technique (Improved SC) is designed over discrete wavelet transform (DWT) based OFDM and compared with conventional SC scheme over different channel conditions i.e. AWGN and Rayleigh fading environments. It is found that proposed DWT-OFDM with Improved SC scheme outperforms conventional SC technique significantly, under both AWGN and Rayleigh channel conditions. Further, in order to justify the novelty in the research contribution, a Split-DWT based Simulink model for Improved SC scheme is investigated to analyse the BER performance. This Split-DWT based Simulink model presented here foretells the future research potential in wavelet hybridization of OFDM to side-line ICI effects more efficiently.
Layered ammonium vanadate materials exhibit significant mass-specific capacity and ion transport rate due to their small molecular weight and large ionic radius. However, the strong electrostatic interactions of Zn2+ and V–O bonds and the fragile ionic bonding of N-H…O bonds hinder their development. Therefore, this work reports Mg2+ doping NH4V4O10 materials accompanied by flower-like morphology to lower the migration energy barrier and inhibit amine dissolution. Owing to the 3D-flower-like morphology and the combined impact of Mg2+ and structural water, the binding of Zn2+…V-O is significantly enhanced and additional ion channels were constructed. Pre-intercalated Mg2+ enhances the structural integrity and prevents irreversible deammoniation from obtaining excellent cyclic stability. Density functional theory (DFT) calculations show that MNVO provides a smoother Zn2+ diffusion path with a lower migration barrier. Benefited from these advantages, the MNVO cathode exhibits a high specific capacity of 410 mAh g−1 at 0.1 A g−1, satisfactory cyclic stability (90.2 % capacity retention at 10 A g−1 after 5000 cycles), and capable rate ability (118 mAh g−1 at 25 A g−1) within 0.4-1.5 V. Furthermore, the zinc ion storage mechanism in the MNVO cathode is investigated through multiple analyses. 相似文献
A current operational amplifier (COA) with very high current drive capability is presented in this paper. The principle of
operation of this unique structure is discussed, its most important formulas are derived and its outstanding performance is
verified by HSPICE simulation in TSMC 0.18 μm CMOS, BSIM3, and Level49 technology. Owing to the elaborately arranged components,
the proposed circuit demonstrates very high frequency bandwidth, extremely high CMRR, high output impedance, and true rail
to rail output voltage swing range while operating at very low power supply of ±0.5 V. The interesting results such as current
drive capability of ±1 mA, high output impedance of 5 GΩ, wide gain bandwidth of 220 MHz, extremely high output voltage swing
of ±0.45 V, which interestingly provides the highest yet reported output voltage compliance for current mode building blocks
implemented by regular CMOS technology, low static power consumption of 159 μW, and very high CMRR of 155 dB is achieved utilizing
standard CMOS technology. Full process, voltage, and temperature variation analysis of the circuit is also investigated in
order to approve the well robustness of the structure. The transient stepwise and sinusoidal response analysis is also done
to verify the proposed COA stability. 相似文献
Wireless Networks - The static conventional network architecture is ill-suited to the growing management complexity and highly dynamic wireless network topologies. Software Defined Radio systems... 相似文献
Resource scheduling in Long Term Evolution (LTE) is an open and rising issue. It has an enormous impact on the entire system performance. Due to the nature of LTE system, the scheduler has to be designed carefully. It has to overcome many challenges such as limited processing time and the high dynamic behavior. This paper proposes a novel scheduling policy for the MAC layer in LTE called the Best Minimum Summation (BMS). The main aim of this scheduling policy is to achieve high performance with low complexity. Three sub-schedulers have been developed. Each one of these schedulers deals with scheduling table in different dimension. The first one operates on the scheduling table through the user dimension (BMS.UE); while the second one operates on the scheduling table through the resource block dimension (BMS.RB). The third scheduler operates on the scheduling table correlating both of these dimensions (BMS.2D). All of the proposed solutions were intensively evaluated in a system level simulator. Three performance metrics were used which are throughput, error rate and fairness. The results have shown that the ability of the BMS.UE scheduler to outperform other existing schedulers of LTE. 相似文献
In this work, we investigate the energy efficiency in optical code division multiplexing access (OCDMA) networks with forward error correction (FEC). We have modeled the energy efficiency considering the capacity of information transmitted and the network power consumption. The proposed network power consumption model considers the optical transmitter, receiver, optical amplifiers, FEC and network infrastructure as encoders, decoders, star coupler and network control in the overall optical power network consumption balance. Furthermore, an expression relating the signal-to-noise-plus-interference ratio gain for forward error correction with low-density parity-check code scheme considering the power consumption and bandwidth occupancy has been derived. Numerical results for OCDMA networks with aggregated FEC procedure have revealed the viability of the FEC deployment aiming to increase the overall energy efficiency of OCDMA networks. 相似文献
We described the fabrication of porous ZnO using the electrochemical etching method. ZnO thin films deposited by radiofrequency sputtering were etched electrochemically using 10 wt% KOH solution as an etching medium to obtain porous ZnO surface structure. A constant voltage of 15 V was applied to enhance the etching process. The etched samples were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectroscopy to examine their structural and optical properties. XRD spectra showed that by performing the electrochemical etching process, porous ZnO could be obtained without severely deteriorating the crystallinity of the samples. Moreover, SEM characterization revealed that hillock-type porous ZnO was fabricated successfully. In addition, the cross-sectional SEM images revealed that there were only minimal changes in the layer thickness after the ZnO had been etched for various lengths of time. This finding shows the dominance of the vertical etching process. Notably, the intensity of PL spectra increased and the PL excitation peak exhibited a red shift trend as the etching time increased. These observations are due to the increase of the surface to volume ratio of the ZnO surface and the strain relaxation along the dislocation and grain boundary. 相似文献