Genetic Algorithm for the Multiple-Query Optimization Problem

Producing answers to a set of queries with common tasks efficiently is known as the multiple-query optimization (MQO) problem. Each query can have several alternative evaluation plans, each with a different set of tasks. Therefore, the goal of MQO is to choose the right set of plans for queries which minimizes the total execution time by performing common tasks only once. Since MQO is an NP-hard problem, several, mostly heuristics based, solutions have been proposed for solving it. To the best of our knowledge, this correspondence is the first attempt to solve MQO using an evolutionary technique, genetic algorithms     

Copolymer of ketonic resin–polyacrylonitrile

The polymerization of acrylonitrile in the presence of Ce(IV) salts and ketonic resin such as methyl ethyl ketone/formaldehyde and cyclohexanone/formaldehyde resin was investigated. Block copolymer of ketonic resin–polyacrylonitrile was produced. The effect of Ce(IV) concentration, temperature, time, and monomer concentration on the yield and molecular weight was studied. Maximum yield was obtained at 50°C and ceric ammonium nitrate concentration of 0.033 mol/L.     

GNSS positioning accuracy improvement based on surface meteorological parameters using artificial neural networks

With the ongoing development of global navigation satellite system (GNSS) technologies, user's dependence on these technologies has drastically risen. Ranging anywhere from industrial applications to agriculture or geodetic applications, the growing demand has stimulated the need for more sophisticated equipment with seamless accuracy. However, the signal received by a GNSS receiver has always faced the risk of contamination by many different sources of error, and this issue decreases the GNSS positioning accuracy. One of the most notable errors is the delay that occurs mainly in the troposphere layer, which mostly relies on the meteorological condition parameters. In this work, an artificial neural network (ANN)‐based mitigation technique in order to eliminate troposphere delay is presented. Our ANN model trained using the surface meteorological parameters, namely, temperature, humidity, wind speed, maximum wind direction, and pressure with the number of satellites achieved by a GNSS receiver. The result showed that ANN model successfully improved the position accuracy level of the GNSS receiver in both horizontal (2D) and three dimensions (3D) at 43.77% and 19.19%, respectively.     

A universal low-noise analog receiver baseband in 65-nm CMOS

In this paper, a novel universal receiver baseband approach is introduced. The chain includes a post-mixer noise shaping blocker pre-filter, a programmable-gain post mixer amplifier (PMA) with blocker suppression, a differential ramp-based novel linear-in-dB variable gain amplifier and a Sallen–Key output buffer. The 1.2-V chain is implemented in a 65-nm CMOS process, occupying a die area of 0.45 mm². The total power consumption of the baseband chain is 11.5 mW. The device can be tuned across a bandwidth of 700-KHz to 5.2-MHz with 20 kHz resolution and is tested for two distinct mobile-TV applications; integrated services digital broadcasting-terrestrial ISDB-T (3-segment f _c = 700 kHz) and digital video broadcasting-terrestrial/handheld (DVB-T/H f _c = 3.8 MHz). The measured IIP3 of the whole chain for the adjacent blocker channel is 24.2 and 24 dBm for the ISDB-T and DVB-T/H modes, respectively. The measured input-referred noise density is 10.5 nV/sqrtHz in DVB-T/H mode and 14.5 nV/sqrtHz in ISDB-T mode.     

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

We have experimentally demonstrated structural advantages due to rounded corners of rectangular-like cross-section of silicon nanowire (SiNW) field-effect transistors (FETs) on on-current (I_ON), inversion charge density normalized by a peripheral length of channel cross-section (Q_inv) and effective carrier mobility (μ_eff). The I_ON was evaluated at the overdrive voltage (V_OV) of 1.0 V, which is the difference between gate voltage (V_g) and the threshold voltage (V_th), and at the drain voltage of 1.0 V. The SiNW nFETs have revealed high I_ON of 1600 μA/μm of the channel width (w_NW) of 19 nm and height (h_NW) of 12 nm with the gate length (L_g) of 65 nm. We have separated the amount of on-current per wire at V_OV = 1.0 V to a corner component and a flat surface component, and the contribution of the corners was nearly 60% of the total I_ON of the SiNW nFET with L_g of 65 nm. Higher Q_inv at V_OV = 1.0 V evaluated by advanced split-CV method was obtained with narrower SiNW FET, and it has been revealed the amount of inversion charge near corners occupied 50% of all the amount of inversion charge of the SiNW FET (w_NW = 19 nm and h_NW = 12 nm). We also obtained high μ_eff of the SiNW FETs compared with that of SOI planar nFETs. The μ_eff at the corners of SiNW FET has been calculated with the separated amount of inversion charge and drain conductance. Higher μ_eff around corners is obtained than the original μ_eff of the SiNW nFETs. The higher μ_eff and the large fractions of I_ON and Q_inv around the corners indicate that the rounded corners of rectangular-like cross-sections play important roles on the enhancement of the electrical performance of the SiNW nFETs.     

Prediction of energy consumption for LoRa based wireless sensors network

Wireless Networks - This paper shows a method for predicting the lifetime of a wireless sensor network based on the LoRa Ra-01 wireless modules. To develop a prediction model of the energy...     

Performance of joint transmit and receive antenna selection in dual hop amplify‐and‐forward relay network over Nakagami‐m fading channels

In this paper, performance of joint transmit and receive antenna selection in each hop of dual hop amplify‐and‐forward relay network is analyzed over flat and asymmetric Nakagami‐m fading channels. In the network, source, relay, and destination are equipped with multiple antennas. By considering relay location, we derive exact closed‐form cumulative distribution function, moment generating function, moments of end‐to‐end signal‐to‐noise ratio and closed form symbol error probability expressions for fixed and channel state information‐based relay gains. We also derive the asymptotical outage probability and symbol error probability expressions to obtain diversity order and array gain of the network. Analytical results are validated by the Monte Carlo simulations. Copyright © 2012 John Wiley & Sons, Ltd.     

End‐to‐end performance of transmit antenna selection and generalized selection combining in dual‐hop amplify‐and‐forward relay network in the presence of feedback errors

In this paper, end‐to‐end performance of transmit antenna selection (TAS) and generalized selection combining (GSC) is studied in a dual‐hop amplify‐and‐forward relay network over flat Rayleigh fading channels. In the system, source and destination equipped with multiple antennas, communicate by the help of single relay equipped with single antenna. Source‐destination link is not available. TAS is used for transmission at the source, and GSC is used for reception at the destination. By considering the relay location and the presence of error in feedback channel from the relay to the source, we derive closed‐form outage probability, moment generating function and moments of end‐to‐end signal‐to‐noise ratio, and closed‐form symbol error probability (SEP) expressions for channel state information (CSI)‐based and fixed relay gains. The diversity order and array gain of the network are obtained for both CSI‐based and fixed relay gains by deriving asymptotical outage probability and SEP expressions. The analytical results are validated by the Monte Carlo simulations. Copyright © 2012 John Wiley & Sons, Ltd.     

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Oxygen incorporation for compensation of oxygen defects is investigated with La-silicate dielectrics in directly contacted with the Si substrate. The amount of oxygen is controlled by the temperature of annealing in oxygen atmosphere (oxygen annealing) and the thickness of the gate electrode. The positive shift in flatband voltage (V_FB) by oxygen incorporation is an experimental evidence for defects compensation in La-silicate dielectrics. Optimum oxygen annealing provides the V_FB shift toward positive direction without increasing equivalent oxide thickness (EOT). Although the oxygen annealing degrades the interfacial property at La-silicate/Si interface, subsequent forming gas annealing (FGA) can recover the interfacial property. It is experimentally revealed that the positive V_FB shift of La-silicate dielectrics is stable even after subsequent FGA. The supplied oxygen in La-silicate is expected to maintain even after reducing process. Movement of Fermi level toward the Si valence band edge caused by oxygen incorporation is successfully observed by XPS. Moreover, no chemical reaction between La-silicate and Si substrate by oxygen annealing are confirmed from TEM observation and analyses of X-ray photoelectron spectra. It is experimentally demonstrated that effective hole mobility can be improved without increase in EOT by combination of oxygen annealing and FGA.