Monte Carlo simulation of hydrogen absorption in palladium and palladium–silver alloys

A modified Monte Carlo (MC) simulation was performed to investigate the hydrogen absorption behavior in Pd and Pd–Ag alloys of the composition Pd_xAg_1−x (x=0.7–0.8) under H₂ pressure (0.1 MPa) at different temperatures. The present method employed can consider the dissociative adsorption of hydrogen molecule and the subsequent absorption of hydrogen atom by formalizing the relationship between the pressure of hydrogen molecule and hydrogen atom. The potential parameters were determined to reproduce the solution enthalpy of hydrogen in pure metals. The results are in good agreement with experimental findings as well as previous theoretical studies. We confirmed that our method is useful to simulate the absorption of hydrogen in metals and alloys.     

Determination of three dimensional in situ stress from core discing based on analysis of principal tensile stress

To determine all of the components of in situ stress from core discing, both the directions and magnitudes of the principal in situ stresses must be determined for a disc of a given thickness. In this study, we analyzed the direction and magnitude of tensile stress below an HQ core stub for 11 core lengths using stress conditions under which core discing is likely to occur. First, based on an analysis of the direction of tensile stress below the core stub, we propose a method for determining directions of in situ stress from the height distribution at the periphery of the end surface of a disc. This method can be used with a disc of any thickness. Next, based on an analysis of the magnitude of tensile stress in the central part of a core, we propose a linear criterion for core discing, which can be applied to a core of any length. This criterion was in good agreement with an empirical formula obtained previously in laboratory experiments. By combining information on the direction of in situ stress and the linear criterion for core discing, we propose a method for determining all of the components of in situ stress from core discing under the assumption that vertical stress is given by the overburden stress. Finally, these methods were applied to discs obtained from a field where hydraulic fracturing was performed to measure horizontal stresses. The results showed that the azimuths of the principal stresses estimated from core discing were consistent with those of the principal horizontal stresses determined by hydraulic fracturing and that while the magnitudes of the principal horizontal stresses estimated from core discing showed a large scatter, they were similar to those determined by hydraulic fracturing.     

Silica removal from Mokai, New Zealand, geothermal brine by treatment with lime and a cationic precipitant

Preliminary experiments using two chemicals (CaO, a quicklime, and a cationic nitrogen-bearing precipitant, EC-004) to remove silica from geothermal brine were undertaken at the Mokai geothermal plant, New Zealand. The brine was mixed with the reagent (CaO or EC-004). The reaction was studied from the start of the experiment (NRT, 0 min, no retaining time) and after 15 min (15RT) at 90 °C. The concentration of silica in the brine was initially 954 mg/l, and decreased linearly with increasing reagent concentration. When CaO is added, the silica concentration at 15RT was 200 mg/l lower than at NRT and became almost zero on addition of 1.5 g/l. In contrast, when EC-004 is added, the total silica concentration nearly reaches the solubility of amorphous silica at 90 °C. In order to prevent silica scaling in Mokai brines cooled to 90 °C, the CaO and EC-004 added should be individually adjusted to 0.5 g/l and 80 mg/l, respectively.     

Intussusception caused by a carcinoma of the cecum during pregnancy: report of a case and review of the literature

Respiratory infections are the most common infection in children. They differ remarkably according to age, bacteria and viruses. Therefore a careful history of outbreak, age, former infections, involvement of surroundings, symptoms, etc are essential. The present study included 50 children, aged between 0.3 and 12 yrs, all treated ambulatorily. 21 received brodimoprim (B) and 29 erythromycin (E). Indications were: tonsillitis, bronchitis, otitis media, sinusitis and scarlet fever. Dosages were: B was given 10 mg/kg body weight (b.w.) initially followed by 5 mg/kg b.w., once-a-day. The duration of treatment varied between 4 and 14 days (mean 8.3 days). E was given 30.50 mg/kg b.w. 3 times per day; duration 4 to 14 days (mean 8.6 days). Overall results were: in group B:12 cures, 5 improvements, 3 failures; 1 not assessable. In group E: 20 cures, 8 improvements, 1 failure. Side effects: in group B: vomiting (1), skin reaction (2), discontinuation (2); in group E: skin reaction (1), diarrhea (5), diarrhea+vomiting (1); discontinuation (2). The differences in efficacy and tolerability in the two groups are not statistically significant. The improved compliance with a single versus t.i.d. dosages has to be taken into account.     

Comments on “The electromagnetic field of a vertical electricdipole over the Earth or sea” [and reply]

Yokoyama makes some comments on the “numerical distance” contained in the surface wave term in the paper by King and Sandler (see ibid., vol.42, p.383, 1994) comparing it with the one obtained by former authors. He comments on the parameter P in the Fresnel-integral term in the paper. Yokoyama concludes that for the calculation of such a problem in a semi-sphere, the spherical polar coordinate system is preferable to the cylindrical coordinate system including the case of lateral waves. King and Sandler reply to the Comment     

Cytomegalovirus disease accompanied by severe hypoproteinemia in a patient with adult T-cell leukemia-lymphoma

A 62-year-old Japanese man complained of fever, general fatigue, anorexia and watery diarrhea during remission of adult T-cell leukemia-lymphoma. Laboratory examinations showed severe hypoproteinemia (2.9 g/dl). However, neither intestinal lesions associated with ATL nor findings suggesting protein losing gastroenteropathy were observed. Cytomegalovirus (CMV) antigen detection assay using peripheral blood leukocytes revealed that he had an active CMV infection with hemophagocytic syndrome. Treatment with ganciclovir and methylprednisolone led to an improvement of hypoproteinemia. CMV disease and associated hemophagocytic syndrome should be considered as a cause of hypoproteinemia in an immunocompromised host.     

Damage tolerance of glass mat/epoxy laminates hybridized with flexible resin under static and impact loading

This study deals with the impact property and damage tolerance of matrix hybrid composite laminates with different laminate constitution. The matrix hybrid composite laminates consisted of the laminae with a conventional epoxy resin and the laminae with a flexible epoxy resin modified from the conventional resin to avoid the interlaminar delamination. The impact energy absorption ratio greatly depended on the matrix resin placed at the impact face. The energy absorption was almost constant if the conventional resin was placed at the impact surface layer, while it increased exponentially with the increasing fraction of the flexible resin if the flexible resin was placed at the impact face. The impact energy was absorbed by the damage development and propagation in the laminate with conventional resin laminae as the impacted face, while it was absorbed by both the recoverable deformation of the flexible resin and the damage propagation in the laminate with flexible resin laminae as the impacted face.     

Resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure

A common-emitter current gain of 10 has been measured at 77 K for a 100 nm-base resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure. The current gain for 25 nm-base RHETs has reached 25, which is the highest value yet reported for hot-electron transistors, and the collector current peak-to-valley ratio has reached 15.0 for the same device.     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.