High-voltage buried-channel MOS fabricated by oxygen implantation into silicon

A high-voltage offset-gate buried-channel MOS made on a SOS-like substrate is described. An isolation layer is formed by an oxygen implantation process called SIMOX. A 410 V buried SiO2 breakdown voltage and a 180 V drain breakdown voltage are obtained.     

Determination of fatty acid composition by gas chromatography: I. Analysis with use of thermal conductivity detector

For the purpose of establishing a standard method for the gas chromatographic determination of fatty acid composition, a collaborative study team has carried out replicate analyses of specified samples using gas chromatographs equipped with thermal conductivity detectors and has examined the entire set of experimental data by a statistical method. From the results of the four collaborative works it was found that deviation of analytical values from exact composition and interlaboratory scattering of data may be considerably decreased by the following means: (a) enlarging the size of narrow peaks (less than 5 mm at a half height) or peaks with low height by adjusting the attenuator range or chart speed; (b) correcting the analytical values by using correction factors determined from analysis of known mixtures having composition similar to that of an unknown sample. Presented at the JOCS-AOCS Joint Meeting, Los Angeles, April 1972.     

A case of necrotizing scleritis associated with Epstein-Barr virus infection

Recently Epstein-Barr virus (EBV) is often reported in association with ocular disease. But EBV has not been reported to cause necrotizing scleritis. A 71-year-old woman developed ciliary injection and peripheral corneal ulcer in both eyes. The lesions did not respond to topical steroid and systemic indomethacin. The sclera became transparent and perforated. EBV serologic antibody titers were strongly positive. Anti-viral capsid antigen (VCA)-IgG was 1: 1,280 and anti-early antigen (EA)-IgG was 1: 640. These serologic results suggested active EBV infection. Using immunofluorescence techniques, the squamous epithelial cells of the conjunctiva were stained with monoclonal antibody against EBV-VCA and strongly stained with antibody against IgG. The results of serologic test and the immunofluorescence techniques appeared to suggest that the necrotizing scleritis was caused by EBV.     

Mid-term results in coronary revascularization using the right gastroepiploic artery graft

We studied the mid-term results in 191 patients (including emergent operation in 27 patients) who have performed coronary artery bypass grafting (CABG) using the right gastroepiploic artery (REGA) for 74 months (mean follow up period was 37 months). We evaluated the postoperative results in terms of 1. mortality and survival rate, 2. graft angiography, 3. cardiac event free rate and 4. abdominal complications. We had operative death in 6 patients (3.1%) including 3 patients of emergent operations. Late deaths were found in 11 patients (5.9%): 2 patients were cardiac death and 9 were non-cardiac. The actual survival rates were 94.2% at one year, 90.0% at three years and 85.9% at five years. Early patency rate of the RGEA was 98.9% (n = 178). However flow competition between the RGEA and native coronary artery was seen in 42 patients (24.0%). Mid-term patency rate was 96.4% (n = 28). According to mid-term graft angiography, 1 patient improved and 5 patients got worse in comparison with early control. Cardiac event free rates were 98.2% at 1 year, 94.8% at 3 years and 92.7% at 5 years. Abdominal complications were observed in 5 patients (1 patient of bleeding from the RGEA, 1 of gastric perforation, 2 of bleeding from gastric ulcer and 1 of pyloric stenosis) at early period and in 7 patients (2 patients of incisional hernia and 5 of gastric cancer) at long-term period. Early and mid-term results of CABG using the RGEA were quite good. However, the RGEA had a tendency of flow competition against native coronary artery and a problem of gastric cancer after the operation.     

CW operation of 1.5 ?m GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facet

The reactive-ion-etching technique in forming facet mirrors for 1.5 ?m GaInAs/InP buried-heterostructure (BH) lasers is reported. Room-temperature CW operation has been achieved with BH lasers having one of the facets formed by RIE and metallic coating and the other by cleaving. The laser with 330 ?m long cavity has a 110 mA threshold.     

A handy tool for history keeping of Geant4 tracks - J4HistoryKeeper

The Particle Flow Analysis (PFA) is currently under intense studies as the most promising way to achieve precision jet energy measurements required at the future linear e⁺e⁻ collider. In order to optimize detector configurations and to tune up the PFA it is crucial to identify factors that limit the PFA performance and clarify the fundamental limits on the jet energy resolution that remain even with the perfect PFA and an infinitely granular calorimeter. This necessitates a tool to connect each calorimeter hit in particle showers to its parent charged track, if any, and eventually all the way back to its corresponding primary particle, while identifying possible interactions and decays along the way. In order to realize this with a realistic memory space, we have developed a set of C++ classes that facilitates history keeping of particle tracks within the framework of Geant4. This software tool, hereafter called J4HistoryKeeper, comes in handy in particular when one needs to stop this history keeping for memory space economy at multiple geometrical boundaries beyond which a particle shower is expected to start. In this paper this software tool is described and applied to a generic detector model to demonstrate its functionality.     

Substrate bias effect for C-MOS operational amplifier using SIMOX technology

The substrate bias effect for SIMOX devices is described. By setting the substrate bias voltage to the accumulation mode in the bulk, the kink onset voltage for the N-ch MOSFET has been found to increase. Open-loop voltage gain for a C-MOS two-stage operational amplifier has been enhanced up to 65 dB.