In this study, we melted four types of waste asbestos containing material such as spread asbestos, plasterboard asbestos,
slate asbestos and asbestos 99 wt%, in a melting furnace at 1,450–1,550 that uses a mixture of hydrogen and oxygen (Brown’s
gas) as a fuel. More volatile components (CaO, K2O) are enriched in spread asbestos, plasterboard asbestos, and slate asbestos, while less volatile compounds (SiO2, Fe2O3, MgO) remain in asbestos 99%. Through basicity of raw materials, spread asbestos, plasterboard asbestos, and slate asbestos
were found to have more alkalinity, and asbestos 99% was found more acidic. SEM and EDX results revealed that all raw materials
had various kinds of asbestos fiber. Spread asbestos, plasterboard asbestos, and slate asbestos were considered as tremolite
asbestos, whereas asbestos 99% was considered as chrysotile asbestos. It was further confirmed by SEM and XRD studies that
all waste materials contained some crystalline structures which transformed into amorphous glassy structure on melting. Also,
in case of added glass cullet during the melting of spread asbestos, it transformed the raw material into a perfect vitrified
product having more glassy surface and amorphous in nature 相似文献
Sufficient conditions for the existence of unique solutions of piecewise linear functions are derived. They require that a certain set of cofactors of each region around a corner point should have the same sign. 相似文献
A convenient process for generating large-scale, horizontally aligned arrays of pristine, single-walled carbon nanotubes (SWNTs) is described. The approach uses guided growth, by chemical vapor deposition (CVD), of SWNTs on miscut single-crystal quartz substrates. Studies of the growth reveal important relationships between the density and alignment of the tubes, the CVD conditions, and the morphology of the quartz. Electrodes and dielectrics patterned on top of these arrays yield thin-film transistors that use the SWNTs as effective thin-film semiconductors. The ability to build high-performance devices of this type suggests significant promise for large-scale aligned arrays of SWNTs in electronics, sensors, and other applications. 相似文献
The depolarization of p-nitroaniline at a stationary cathode under different conditions has been studied. Results obtained with a copper cathode, in presence of 0.1% copper sulphate and on amalgamated copper cathode are reported. The product isolated has been confirmed as p-phenylenediamine. 相似文献
In this paper, we discuss physical model based method to generate channel coefficients for Nakagami-m distribution. We consider the phase envelope joint distribution so that the phase of the faded signal is also considered. Mainly, the coefficients are generated by exploring the physical model that relates the Nakagami-m fading distribution with Gaussian and gamma distributions for which generation of coefficients is available in commonly used simulation tools. The empirical probability density function (PDF) of generated coefficients are compared with the theoretical values and they are found in excellent agreements. The empirical PDFs for envelope and phase of the generated coefficients are validated using the Kolmogorov–Smirnov test.
A thin film of cobalt selenide is deposited on the fluorescence tin oxide-coated glass surface material using a simple chemical growth technique. In this article, we report on the study of photoelectrochemical characteristics (PEC), including current–voltage, capacitance–voltage characteristics, photovoltaic power output, and spectral response in dark and light conditions. For the above parameter study, we prepared using cobalt selenide and carbon electrode (using polysulfide as electrolyte), the battery configuration is expressed as n-CoSe/NaOH (1 M)?+?Na2S (1 M)?+?S (1 M)/C (graphite). The performance of the cobalt selenide thin film material the resulted values of respective series (RS) and shunt (RSh) resistance 2.280 kΩ and 1.224 Ω, respectively. The efficiency and fill factor of these PEC cells were found to be 0.899 and 28.72%. The junction ideality value are found to be (nD) is 0.69 in the dark and 2.72 in the light (nL). The M–S plots are constructed using C?2 against applied bias voltage (with respect to SCE) for CoSe PEC cell. The positive slope of the M–S plot confirms n-type conductivity of the CoSe films. The carrier density values of the samples obtained from the M–S plots varied from 3.48?×?1014 cm?3.