Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR     

Dimensional scaling for impact cratering and perforation

The issue of generic scaling laws able to adequately predict (within better than 20%) cratering in semi-infinite targets and perforations through finite thickness targets was revisited. The approach used was to apply physical logic for hydrodynamics in a consistent manner able to account for chunky-body impacts such that the only variables needed are those directly related to known material properties for both the impactor and target. The analyses were compared and verified versus CTH hydrodynamic code calculations and existing experimental data. Comparisons with previous scaling laws were also performed to identify which (if any) were good for generic purposes. This paper is a short synopsis of the full report [1] available through the NASA Langley Research Center, LDEF Science Office.     

An integrated air-gap-capacitor pressure sensor and digital readoutwith sub-100 attofarad resolution

The fabrication and characterization of an integrated air-gap-capacitor pressure sensor are presented. The capacitor fabrication process uses standard IC processing to create NMOS circuits, and an added polysilicon layer to create poly-to-n⁺ capacitors with a 0.6-μm-thick dielectric using deposited oxide. Subsequent processing is used to produce deformable, parallel-plate, air-gap capacitors on the front side alongside MOS circuits. Sensor chips are fabricated using 100-μm×100-μm, 100-fF air-gap capacitors with on-chip circuitry. The sensor chip is a part of a capacitive measurement system that uses a charge-redistribution sense technique to achieve very high capacitance resolution. The behavior of the pressure sensor chips was studied as a function of applied pressure in the 0-240-kPa (0-35-psi) range. Measurements indicate a sensitivity of 0.93 mV/kPa (6.40 mV/psi) with a deflection of 10 nm/kPa (70 nm/psi) at 0-69 kPa (0-10 psi). Standard deviations indicate a static pressure resolution of 0.54 kPa (0.078 psi), which translates to 30 attofarads at a sampling frequency of 11 kHz     

Structural properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 relaxor ferroelectric thin films on SrRuO3 conducting oxides

Coating of 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ (PMN–PT) relaxor ferroelectrics by a sol–gel method is followed by growth of epitaxial SrRuO₃ (SRO) metallic oxide electrodes on SrTiO₃ (STO) single-crystal substrate by pulsed laser deposition. High-quality PMN–PT films on SRO with preferred growth orientation were successfully fabricated by controlling the operation parameters. Structural properties of relaxor ferroelectric PMN–PT thin films on SRO/STO substrates have been studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). In-plane and out-of-plane alignments of the heterostructure are confirmed and the structural twinning of the materials are also revealed.     

Study on Contamination Control for Yield Enhancement in the Manufacturing Line of Cellular Phone Modules

Practical studies on the method of contamination control for yield enhancement in the cellular phone modules production line were carried out. A contamination control method was proposed, consisting of data collection, data analysis, improvement action, verification, and implementation of control. The partition check method and the composition analysis for data collection and data analysis were respectively used in the cellular phone modules manufacturing process, and these methods were evaluated by the variation of yield loss before and after implementing the actions for improvement. In the partition check method, the critical process step was selected, and yield loss reduction through improvement actions was observed, whereas in the composition analysis, critical sources were selected, and yield loss reduction through improvement actions was investigated. From the results, it is concluded that the partition check and the composition analysis are effective solutions for contamination control in cleanroom production lines.     

Application of artificial neural networks to the analysis of two‐dimensional fluorescence spectra in recombinant E coli fermentation processes

A two‐dimensional (2D) spectrofluorometer was used to monitor various fermentation processes with recombinant E coli for the production of 5‐aminolevulinic acid (ALA). The whole fluorescence spectral data obtained during a process were analyzed using artificial neural networks, ie self‐organizing map (SOM) and feedforward backpropagation neural network (BPNN). The SOM‐based classification of the whole spectral data has made it possible to qualitatively associate some process parameters with the normalized weights and variances, and to select some useful combinations of excitation and emission wavelengths. Based on the classified fluorescence spectra a supervised BPNN algorithm was used to predict some of the process parameters. It was also shown that the BPNN models could elucidate some sections of the process's performance, eg forecasting the process's performance. Copyright © 2005 Society of Chemical Industry     

Equilibrium and crystallographic measurements of the binary tetrahydrofuran and helium clathrate hydrates

Clathrate compounds are crystalline materials formed by a physical interaction between host and relatively light guest molecules. Various types of nano-sized cages surrounded by host frameworks exist in the highly unique crystalline structures and free guest molecules are entrapped in an open host-guest network. Recently, we reported two peculiar phenomena, swapping and tuning, naturally occurring in the hydrate cages. Helium, one of the smallest light guest molecules, must be the challengeable material in the sense of physics and moreover possesses versatile applications in the field of superconductivity technology and thermonuclear industry. In this regard, we attempted for the first time to synthesize helium hydrates at moderate temperature and pressure conditions. According to inclusion phenomena, helium itself normally cannot form clathrate hydrates due to being too small molecularly without the help of hydrate former molecules (sI, sII, and sH formers). In this study, the hydrate equilibria of the binary clathrate hydrate containing tetrahydrofuran, helium, and water were determined at 2, 3, 5.56 THF mol%. Direct volumetric measurements were also carried out to confirm the exact amount of helium captured in the hydrate cages. Finally, the crystalline structure of the formed mixed hydrates was identified by powder X-ray diffraction, resulting in structure II.