CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.     

Porous Silicon Nanoparticles Embedded in Poly(lactic‐co‐glycolic acid) Nanofiber Scaffolds Deliver Neurotrophic Payloads to Enhance Neuronal Growth

Scaffolds made from biocompatible polymers provide physical cues to direct the extension of neurites and to encourage repair of damaged nerves. The inclusion of neurotrophic payloads in these scaffolds can substantially enhance regrowth and repair processes. However, many promising neurotrophic candidates are excluded from this approach due to incompatibilities with the polymer or with the polymer processing conditions. This work provides one solution to this problem by incorporating porous silicon nanoparticles (pSiNPs) that are preloaded with the therapeutic into a polymer scaffold during fabrication. The nanoparticle‐drug‐polymer hybrids are prepared in the form of oriented poly(lactic‐co‐glycolic acid) nanofiber scaffolds. Three different therapeutic payloads are tested: bpV(HOpic), a small molecule inhibitor of phosphatase and tensin homolog (PTEN); an RNA aptamer specific to tropomyosin‐related kinase receptor type B (TrkB); and the protein nerve growth factor (NGF). Each therapeutic is loaded using a loading chemistry that is optimized to slow the rate of release of these water‐soluble payloads. The drug‐loaded pSiNP‐nanofiber hybrids release approximately half of their TrkB aptamer, bpV(HOpic), or NGF payload in 2, 10, and >40 days, respectively. The nanofiber hybrids increase neurite extension relative to drug‐free control nanofibers in a dorsal root ganglion explant assay.     

Effect of lithium intercalation on the photovoltaic performances of photovoltachromic cells

In the last few years, a new class of smart multifunctional photoelectrochemical devices has been attracting the interest of several academic institutions and industrial companies: photovoltachromic cells, combining the features of photoelectrochromic cells with those of dye‐sensitized solar cells. Here, we report the results of a detailed electrochemical analysis aiming at investigating the electrochemical behavior of these complex photoelectrochemical devices. In particular, we have been focused on the effect of Li⁺ ions displacement during the coloration of the electrochromic tungsten oxide on the performances of the photovoltaic unit. As we had previously observed striking differences between the performances of the barely photovoltaic mode (with the tungsten oxide in the bleached state) and the photovoltachromic mode (with the tungsten oxide in the colored state), we thus attempted to provide a reasonable physical interpretation to the observed phenomena. Copyright © 2013 John Wiley & Sons, Ltd.     

Stimuli‐Responsive Nucleic Acid‐Based Polyacrylamide Hydrogel‐Coated Metal–Organic Framework Nanoparticles for Controlled Drug Release

The synthesis of doxorubicin‐loaded metal–organic framework nanoparticles (NMOFs) coated with a stimuli‐responsive nucleic acid‐based polyacrylamide hydrogel is described. The formation of the hydrogel is stimulated by the crosslinking of two polyacrylamide chains, P_A and P_B, that are functionalized with two nucleic acid hairpins ( 4 ) and ( 5 ) using the strand‐induced hybridization chain reaction. The resulting duplex‐bridged polyacrylamide hydrogel includes the anti‐ATP (adenosine triphosphate) aptamer sequence in a caged configuration. The drug encapsulated in the NMOFs is locked by the hydrogel coating. In the presence of ATP that is overexpressed in cancer cells, the hydrogel coating is degraded via the formation of the ATP–aptamer complex, resulting in the release of doxorubicin drug. In addition to the introduction of a general means to synthesize drug‐loaded stimuli‐responsive nucleic acid‐based polyacrylamide hydrogel‐coated NMOFs hybrids, the functionalized NMOFs resolve significant limitations associated with the recently reported nucleic acid‐gated drug‐loaded NMOFs. The study reveals substantially higher loading of the drug in the hydrogel‐coated NMOFs as compared to the nucleic acid‐gated NMOFs and overcomes the nonspecific leakage of the drug observed with the nucleic‐acid‐protected NMOFs. The doxorubicin‐loaded, ATP‐responsive, hydrogel‐coated NMOFs reveal selective and effective cytotoxicity toward MDA‐MB‐231 breast cancer cells, as compared to normal MCF‐10A epithelial breast cells.     

Two-Dimensional Silicene–Stanene Heterostructures by Epitaxy

The synthesis of new Xenes and their potential applications prototypes have achieved significant milestones so far. However, to date the realization of Xene heterostructures in analogy with the well known van der Waals heterostructures remains an unresolved issue. Here, a Xene heterostructure concept based on the epitaxial combination of silicene and stanene on Ag(111) is introduced, and how one Xene layer enables another Xene layer of a different nature to grow on top is demonstrated. Single-phase (4 × 4) silicene is synthesized using stanene as a template, and stanene is grown on top of silicene on the other way around. In both heterostructures, in situ and ex situ probes confirm layer-by-layer growth without intercalations and intermixing. Modeling via density functional theory shows that the atomic layers in the heterostructures are strongly interacting, and hexagonal symmetry conservation in each individual layer is sequence selective. The results provide a substantial step toward currently missing Xene heterostructures and may inspire new paths for atomic-scale materials engineering.     

Design of IIR eigenfilters in the frequency domain

The eigenfilter approach is an appealing way of designing digital filters, mainly because of the simplicity of its implementation. In this correspondence, a new method of applying the eigenfilter approach to the design of infinite impulse response (IIR) filters is described. The procedure works in the frequency domain and yields the coefficients of a causal rational transfer function having an arbitrary number of poles and zeros. Some examples of filter design are given to show the effectiveness of the method presented     

Off-state breakdown in power pHEMTs: the impact of the source

Conventional wisdom suggests that in pseudomorphic high electron mobility transistors (pHEMTs), the field between the drain and the gate determines off-state breakdown, and that the drain to gate voltage therefore sets the breakdown voltage of the device. Thus, the two terminal breakdown voltage is a widely used figure of merit, and most models for breakdown focus on the depletion region in the gate-drain gap, while altogether ignoring the source. We present extensive new measurements and simulations that demonstrate that for power pHEMTs, the electrostatic interaction of the source seriously degrades the device's gate-drain breakdown. We identify the key aspect ratio that controls the effect, L_G:x_D where L_G is the gate length and x_D is the depletion region length on the drain. This work establishes that the design of the source must be taken into consideration in the engineering of high-power pHEMT's     

Minimum energy transmission scheduling subject to deadline constraints

We consider the problem of transmission scheduling of data over a wireless fading channel with hard deadline constraints. Our system consists of N users, each with a fixed amount of data that must be served by a common deadline. Given that, for each user, the channel fade state determines the throughput per unit of energy expended, our objective is to minimize the overall expected energy consumption while satisfying the deadline constraint. We consider both a linear and a strictly convex rate-power curve and obtain optimal solutions, based on dynamic programming (DP), and tractable approximate heuristics in both cases. For the special non-fading channel case with convex rate-power curve, an optimal solution is obtained based on the Shortest Path formulation. In the case of a linear rate-power curve, our DP solution has a nice “threshold” form; while for the convex rate-power curve we are able to obtain a heuristic algorithm with comparable performance with that of the optimal scheduling scheme. Alessandro Tarello received his M.Sc. and Ph.D. degrees in Electrical and Communication Engineering from Politecnico di Torino, Torino, Italy, in 2002 and 2006 respectively. He currently holds a Postdoctoral position at Politecnico di Torino. He visited the Laboratory for Information and Decision Systems at MIT, Cambridge, MA, USA, in 2004 and 2005. During Summer 2005 he also visited the Jet Propulsion Laboratory, Pasadena, CA, USA. He received the best student paper award at the Third International Symposium on Modeling and Optimization in Mobile, Ad-Hoc and Wireless Networks (WiOPT’05). His research interests are in the fields of stochastic and fluid models for performance evaluation of packet networks and optimization techniques for wireless and ad-hoc networks. Jun Sun received his B.S. degree in Computer Engineering from University of Florida in 1997 and his M.S. in Electrical Engineering from Massachusetts Institute of Technology in 2002. He is currently a Ph.D. student in the Laboratory for Information and Decision Systems at MIT. His research interest is on communication networks with emphasis on satellite and wireless networks. Murtaza Zafer received his B.Tech degree in Electrical Engineering from the Indian Institute of Technology (IIT), Madras, India, in 2001 and his M.S. degree in Electrical Engineering and Computer Science from the Massachusetts Institute of Technology (MIT), MA, USA, in 2003. Currently, he is pursuing his doctoral studies at the Laboratory for Information and Decision Systems (LIDS) in the department of Electrical Engineering and Computer Science at MIT. He spent the summer of 2004 at the Mathematical Sciences Research center, Bell Laboratories and the summer of 2003 at Qualcomm, Inc. His research interests lie in queueing theory, information theory, control and optimization theory and its applications to wireless communication networks. He is the co-recipient of the best Student Paper award at WiOpt, 2005. He also received the Siemens (India) and Philips (India) award for academic excellence. Eytan Modiano received his B.S. degree in Electrical Engineering and Computer Science from the University of Connecticut at Storrs in 1986 and his M.S. and PhD degrees, both in Electrical Engineering, from the University of Maryland, College Park, MD, in 1989 and 1992 respectively. He was a Naval Research Laboratory Fellow between 1987 and 1992 and a National Research Council Post Doctoral Fellow during 1992–1993. Between 1993 and 1999 he was with MIT Lincoln Laboratory where he was the project leader for MIT Lincoln Laboratory’s Next Generation Internet (NGI) project. Since 1999 he has been on the faculty at MIT; where he is presently an Associate Professor. His research is on communication networks and protocols with emphasis on satellite, wireless, and optical networks. He is currently an Associate Editor for Communication Networks for IEEE Transactions on Information Theory and for The International Journal of Satellite Communications. He had served as a guest editor for IEEE JSAC special issue on WDM network architectures; the Computer Networks Journal special issue on Broadband Internet Access; the Journal of Communications and Networks special issue on Wireless Ad-Hoc Networks; and for IEEE Journal of Lightwave Technology special issue on Optical Networks. He is the Technical Program co-chair for Wiopt 2006, IEEE Infocom 2007, and ACM MobiHoc 2007.     

Near‐Infrared (NIR) Organic Light‐Emitting Diodes (OLEDs): Challenges and Opportunities

The rapid development of the science and technology of organic semiconductors has already led to mass application of organic light‐emitting diodes (OLEDs) in television monitors of outstanding quality as well as in a large variety of smaller displays found in smartphones, tablets, and other gadgets, while introduction of the technology to the illumination sector is imminent. Notably, the requirements of all such applications for emission in the visible range of the electromagnetic spectrum are well tuned to the optical and electronic properties of typical organic semiconductors, thereby representing relatively “low‐hanging fruits,” in terms of material development and exploitation. However, the question arises as to whether developing materials suited for efficient near‐infrared (NIR, 700–1000 nm) emission is possible, and, crucially, desirable to enable new classes of applications spanning from through‐space, short‐range communications to biomedical sensors, night vision, and more generally security applications to name but a few. Here, the major fundamental hurdles to be overcome to achieve efficient NIR emission from organic π‐conjugated systems are discussed, recent progress is reviewed, and an outlook for further development of both materials and applications is provided.     

An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

The effects of direct-current (DC) stress on GaN high-electron-mobility transistors (HEMTs) are investigated by means of numerical simulations, by which the creation of an acceptor trap in the AlGaN barrier layer was correlated to the observed experimental degradation. An increase in the trap concentration induces a worsening of the saturated current I _DSS, transconductance g _m, and output conductance g _O. An increase in the length of the trapping region induces a degradation of I _DSS and g _m, but can reduce g _O. Analysis of scattering parameters in the saturation region shows that the cutoff frequency f _T matches the trend of g _m.