This report demonstrates highly efficient nonradiative energy transfer (NRET) from alloyed CdSeS/ZnS semiconductor nanocrystal quantum dots (QDs) to MoS2 films of varying layer thicknesses, including pristine monolayers, mixed monolayer/bilayer, polycrystalline bilayers, and bulk‐like thicknesses, with NRET efficiencies of over 90%. Large‐area MoS2 films are grown on Si/SiO2 substrates by chemical vapor deposition. Despite the ultrahigh NRET efficiencies there is no distinct increase in the MoS2 photoluminescence intensity. However, by studying the optoelectronic properties of the MoS2 devices before and after adding the QD sensitizing layer photocurrent enhancements as large as ≈14‐fold for pristine monolayer devices are observed, with enhancements on the order of ≈2‐fold for MoS2 devices of mixed monolayer and bilayer thicknesses. For the polycrystalline bilayer and bulk‐like MoS2 devices there is almost no increase in the photocurrent after adding the QDs. Industrially scalable techniques are specifically utilized to fabricate the samples studied in this report, demonstrating the viability of this hybrid structure for commercial photodetector or light harvesting applications. 相似文献
Journal of Signal Processing Systems - This paper presents an algorithm-adaptable, scalable, and platform-portable generator for massive multiple-input multiple-output (MIMO) baseband processing... 相似文献
Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low‐loss modulators and all‐optical switches due to their tunable optical properties, fast optical response, and low losses. In this work, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid‐infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y‐concentrations is observed. Broadband all‐optical switching from near‐infrared to mid‐infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. This work could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid‐infrared region. 相似文献
As people become increasingly acquainted with information technology, they demand continuous availability of services related to their work or leisure. The era of ubiquitous computing announced long ago is currently turning into an everyday reality at an ever-increasing pace. Alongside the evolution of ubiquitous and nomadic computing, the need of people to access vast amounts of information in a comprehensive and efficient way gives rise to the areas of information visualization and augmented-reality. Such technologies allow for the comprehensive presentation of visual information equally addressing the needs of different categories of people.
In the past 5 years, we have been active in a set of European Research Projects addressing the above-mentioned research directions, with the long-term goal to develop a software platform that will enable context-aware services deploying advanced visualization technology in a series of application domains, such as cultural heritage dissemination, interactive television and retail industry. The multitude of the application domains addressed, as well as the multidisciplinary expertise necessary to create a generic platform was successfully addressed in complementary research activities. In this paper, we present the idea of a platform for context-aware services by exploiting advanced visualization technology and subsequently we briefly review the research projects that delivered valuable pieces in the overall puzzle. Emphasis is put on the practical issues of the implementation and deployment in different application scenarios. 相似文献
Understanding transport in Zintl compounds is important due to their unusual chemistry, structural complexity, and potential for good thermoelectric performance. Resistivity measurements indicate that undoped Ca5Al2Sb6 is a charge‐balanced semiconductor with a bandgap of 0.5 eV, consistent with Zintl–Klemm charge counting rules. Substituting divalent calcium with monovalent sodium leads to the formation of free holes, and a transition from insulating to metallic electronic behavior is observed. Seebeck measurements yield a hole mass of ~2me, consistent with a structure containing both ionic and covalent bonding. The structural complexity of Zintl compounds is implicated in their unusually low thermal conductivity values. Indeed, Ca5Al2Sb6 possesses an extremely low lattice thermal conductivity (0.6 W mK?1 at 850 K), which approaches the minimum thermal conductivity limit at high temperature. A single parabolic band model is developed and predicts that Ca4.75Na0.25Al2Sb6 possesses a near‐optimal carrier concentration for thermoelectric power generation. A maximum zT > 0.6 is obtained at 1000 K.Beyond thermoelectric applications, the semiconductor Ca5Al2Sb6 possesses a 1D covalent structure which should be amenable to interesting magnetic interactions when appropriately doped. 相似文献
To investigate the effect of the nanoscale confinement on the properties of a binary aqueous-organic solvent mixture, we performed molecular dynamics simulations of the equilibration of water-acetonitrile (W/ACN) mixtures between a cylindrical silica pore of 3 nm diameter and two bulk reservoirs. Water is enriched, and acetonitrile is depleted inside the pore with respect to the bulk reservoirs: for nominal molar (~volumetric) ratios of 1/3 (10/90), 1/1 (25/75), and 3/1 (50/50), the molar W/ACN ratio in the pore equilibrates to 1.5, 3.2, and 7.0. Thus, the relative accumulation of water in the pore increases with decreasing water fraction in the nominal solvent composition. The pore exhibits local as well as average solvent compositions, structural features, and diffusive mobilities that differ decidedly from the bulk. Water molecules form hydrogen bonds with the hydrophilic silica surface, resulting in a 0.45 nm thick interfacial layer, where solvent density, coordination, and orientation are independent of the nominal W/ACN ratio and the diffusive mobility goes toward zero. Our data suggest that solute transport along and across the nanopore, from the inner volume to the interfacial water layer and the potential adsorption sites at the silica surface, will be substantially different from transport in the bulk. 相似文献
Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n‐type OECTs, the first demonstration of source/drain‐electrode surface modification for achieving state‐of‐the‐art n‐type OECTs is reported. Specifically, thiol‐based self‐assembled monolayers (SAMs), 4‐methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n‐type accumulation‐mode OECTs made from the hydrophilic copolymer P‐90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three‐fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM‐enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n‐type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n‐type OECTs. 相似文献