A first-order current-steering sigma-delta modulator

A new architecture is presented for a first-order sigma-delta (ΣΔ) modulator. The system achieves a high sampling frequency, can be used as a building block for higher-order modulators, and uses circuit techniques that are largely independent of a specific technology. The key features of this implementation are that it operates in a continuous-time (as opposed to switched) mode and does not need feedback amplifiers. To test the validity of the concept, the system was realized in 2-μm, n-well, double-metal, single-poly technology. It has a measured resolution of 9 b and a linearity of 13 b at a clock frequency of 20 MHz with an oversampling ratio of 128. It operates from a power supply of ±2.5 V with a power consumption of 3 mW. The circuit occupies an area of 0.92 mm²     

Influence of dietary sodium bicarbonate on the potassium metabolism of growing dairy calves.

We evaluated the influence of supplemental dietary NaHCO3 on K metabolism of young dairy calves. Thirty-two Holstein and Jersey male and female calves were blocked at 56 to 70 d after birth according to breed, sex, and age and assigned randomly to a 2 x 2 factorial arrangement of dietary treatments for 8 wk: .4% K with 0% NaHCO3, .4% K with 2% NaHCO3, .6% K with 0% NaHCO3, and .6% K with 2% NaHCO3. Feed intake was not affected by dietary KCl or NaHCO3 supplementation, but average daily gain increased with increased K and tended to be reduced by dietary NaHCO3. Plasma K was elevated by increased dietary K but generally was unaffected by NaHCO3. Urinary Ca excretion appeared to be reduced by NaHCO3; urine pH increased with supplemental NaHCO3. Results indicate 1) the K requirement of the growing calf is between .40 and .55% of diet DM, 2) because urinary K excretion was elevated by dietary NaHCO3, the K requirement may be increased when the diet is supplemented with NaHCO3, and 3) average daily gain and plasma K are sensitive indicators of dietary K in the growing calf.     

Analytical investigation of factors influencing power systemstabilizers performance

Results of simulations, designed to illustrate the influence of power system stabilizers (PSS) on inter-area and local oscillations in interconnected power systems, are reported. It is shown that the PSS location and the voltage characteristics of the system loads are significant factors in the ability of a PSS to increase the damping of interarea oscillations. It is also shown that an interaction between modes in two distinct parts of a power system is possible, due to resonance, and that this might cause distortions in mode shape and participation factors     

Stability of rack structures

Standard commercial pallet racking is used in warehouses, factories, shops and a multitude of other places where palletised goods are to be stored. The structural analysis of this type of structure is complicated by the semi-rigid nature of the beam-to-upright connection, which is different from one manufacturer to another.In the present paper an attempt has been made to provide a simple design approach to the stability of pallet rack structures, and the effect that the form of the moment-rotation characteristic has on the type of stability demonstrated by the system.Finally the role of small imperfections is studied, and the effect that they have on the maximum load carrying capacity of the structure is shown.     

A device to measure the cross-sectional area of soft connectivetissues

A device has been designed and fabricated to measure the cross-sectional area of soft connective tissues ex vivo. It consists of two displacement transducers; one sensing tissue thickness and the other sensing width. Outputs are recorded (via an analog to digital interface) using a personal computer. Numerical integration of a thickness versus width plot computes cross-sectional area. This plot also provides a quality check of acquired data. This device has been successfully used in biomechanical studies of rabbit patellar tendons, rat medial collateral ligaments, and dissected specimens of human fascia.     

Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR     

Low-power digital radio as a ubiquitous subscriber loop

The recent growth in the use of digital radio is reviewed. The technology used to implement low-power digital radio in the local exchange loop plant is discussed. The integration of digital radio subscriber loops withnetwork intelligence is explored. The relationship between low-power digital radio loops and broadband fiber loops is briefly examined, and standards and frequency allocation activities are summarized     

Fluorescence in dual-wavelength pumpedHo3+-fluorozirconate fibers

The authors study holmium-doped fluorozirconate fiber pumped simultaneously by HeNe and a laser-doped diode contrapropagating through the fiber. The experiments are described. Dual-wavelength induced fluorescence bands were identified. The two pumping wavelengths were 630 and 830 nm, and strong enhancement of the fluorescence is observed in the 545- and 750-nm ranges. The fiber fluorescence efficiency is modeled with the use of perturbation theory describing the propagation of all the waves involved in the absorption-emission process. Experimental results and theory are qualitatively in agreement     

The origination and optimization of Si/SiO/sub 2/ interface roughness and its effect on CMOS performance

As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology.