全文获取类型
收费全文 | 819篇 |
免费 | 8篇 |
专业分类
电工技术 | 12篇 |
综合类 | 2篇 |
化学工业 | 208篇 |
金属工艺 | 24篇 |
机械仪表 | 10篇 |
建筑科学 | 28篇 |
能源动力 | 16篇 |
轻工业 | 123篇 |
水利工程 | 8篇 |
石油天然气 | 3篇 |
无线电 | 42篇 |
一般工业技术 | 150篇 |
冶金工业 | 137篇 |
原子能技术 | 8篇 |
自动化技术 | 56篇 |
出版年
2023年 | 5篇 |
2022年 | 9篇 |
2021年 | 11篇 |
2020年 | 14篇 |
2019年 | 8篇 |
2018年 | 7篇 |
2017年 | 8篇 |
2016年 | 14篇 |
2015年 | 13篇 |
2014年 | 21篇 |
2013年 | 23篇 |
2012年 | 28篇 |
2011年 | 25篇 |
2010年 | 26篇 |
2009年 | 23篇 |
2008年 | 22篇 |
2007年 | 25篇 |
2006年 | 19篇 |
2005年 | 16篇 |
2004年 | 18篇 |
2003年 | 22篇 |
2002年 | 9篇 |
2001年 | 12篇 |
2000年 | 14篇 |
1999年 | 10篇 |
1998年 | 45篇 |
1997年 | 24篇 |
1996年 | 25篇 |
1995年 | 19篇 |
1994年 | 13篇 |
1993年 | 21篇 |
1992年 | 14篇 |
1991年 | 20篇 |
1990年 | 16篇 |
1989年 | 10篇 |
1987年 | 14篇 |
1985年 | 17篇 |
1984年 | 19篇 |
1983年 | 6篇 |
1982年 | 7篇 |
1981年 | 8篇 |
1980年 | 10篇 |
1979年 | 5篇 |
1978年 | 5篇 |
1977年 | 15篇 |
1976年 | 18篇 |
1975年 | 9篇 |
1974年 | 10篇 |
1971年 | 7篇 |
1938年 | 4篇 |
排序方式: 共有827条查询结果,搜索用时 15 毫秒
51.
Christian Uhlig Ekrem Guenes Anne S. Schulze Matthias T. Elm Peter J. Klar Sabine Schlecht 《Journal of Electronic Materials》2014,43(6):2362-2370
We have synthesized undoped, Co-doped (up to 5%), and Se-doped (up to 4%) FeS2 materials by mechanical alloying in a planetary ball mill and investigated their thermoelectric properties from room temperature (RT) to 600 K. With decreasing particle size, the undoped FeS2 samples showed higher electrical conductivity, from 0.02 S cm?1 for particles with 70 nm grain size up to 3.1 S cm?1 for the sample with grain size of 16 nm. The Seebeck coefficient of the undoped samples showed a decrease with further grinding, from 128 μV K?1 at RT for the sample with 70-nm grains down to 101 μV K?1 for the sample with grain size of 16 nm. The thermal conductivity of the 16-nm undoped sample lay within the range from 1.3 W m?1 K?1 at RT to a minimal value of 1.2 W m?1 K?1 at 600 K. All doped samples showed improved thermoelectric behavior at 600 K compared with the undoped sample with 16 nm particle size. Cobalt doping modified the p-type semiconducting behavior to n-type and increased the thermal conductivity (2.1 W m?1 K?1) but improved the electrical conductivity (41 S cm?1) and Seebeck coefficient (-129 μV K?1). Isovalent selenium doping led to a slightly higher thermal conductivity (1.7 W m?1 K?1) as well as to an improved electrical conductivity (26 S cm?1) and Seebeck coefficient (110 μV K?1). The ZT value of FeS2 was increased by a factor of five by Co doping and by a factor of three by Se doping. 相似文献
52.
Christoph Schuenemann Annette Petrich Roland Schulze David Wynands Jan Meiss Moritz Philipp Hein Jens Jankowski Chris Elschner Joerg Alex Markus Hummert Klaus-Jochen Eichhorn Karl Leo Moritz Riede 《Organic Electronics》2013,14(7):1704-1714
Efficient organic electronic devices require a detailed understanding of the relation between molecular structure, thin film growth, and device performance, which is only partially understood at present. Here, we show that small changes in molecular structure of a donor absorber material lead to significant changes in the intermolecular arrangement within organic solar cells. For this purpose, phenyl rings and propyl side chains are fused to the diindenoperylene (DIP) molecule. Grazing incidence X-ray diffraction and variable angle spectroscopic ellipsometry turned out to be a powerful combination to gain detailed information about the thin film growth. Planar and bulk heterojunction solar cells with C60 as acceptor and the DIP derivatives as donor are fabricated to investigate the influence of film morphology on the device performance. Due to its planar structure, DIP is found to be highly crystalline in pristine and DIP:C60 blend films while its derivatives grow liquid-like crystalline. This indicates that the molecular arrangement is strongly disturbed by the steric hindrance induced by the phenyl rings. The high fill factor (FF) of more than 75% in planar heterojunction solar cells of the DIP derivatives indicates excellent charge transport in the pristine liquid-like crystalline absorber layers. However, bulk heterojunctions of these materials surprisingly result in a low FF of only 54% caused by a weak phase separation and thus poor charge carrier percolation paths due to the lower ordered thin film growth. In contrast, crystalline DIP:C60 heterojunctions lead to high FF of up to 65% as the crystalline growth induces better percolation for the charge carriers. However, the major drawback of this crystalline growth mode is the nearly upright standing orientation of the DIP molecules in both pristine and blend films. This arrangement results in low absorption and thus a photocurrent which is significantly lower than in the DIP derivative devices, where the liquid-like crystalline growth leads to a more horizontal molecular alignment. Our results underline the complexity of the molecular structure-device performance relation in organic semiconductor devices. 相似文献
53.
A special stress measuring device for determining the normal and shear stresses acting on silo walls was developed and tested. The load cell can be used for measuring simultaneously the normal stress as well as the intensity and direction of the shear stress. 相似文献
54.
55.
Precipitation and coating techniques that proved successful for lead scandium niobate were tried with lead scandium tantalate. The Ta2 O5 did not prove to be a useful substrate for the precipitating carbonates, but the resulting fine-particle-size powder lowered the sintering temperature to 1375° with only 0.4 wt% PbO loss. Annealed samples showed shifts in the dielectric response and sharpening of infrared and X-ray diffraction patterns, but little development of super lattice. 相似文献
56.
57.
58.
Anodic niobium oxide in a n-type semiconductor due to an oxygen deficit. Electron donor densities and the dependence of excitation energies upon donor density were determined from measurements of space-charge capacitances as a function of electrode potential. Rates of Fe(III) reduction and of Fe(II) oxidation were measured at oxide films of different donor densities as functions of electrode potential and pH value. The results indicate electronic states in the space-charge layer below the oxide surface to participate in the electron-transfer reactions. Experimental polarisation curves are compared to curves calculated theoretically. From the shape of the polarisation curve flat-band potentials of the oxide are estimated. The observed polarisation curves are compatible with λ = 1·2 eV for the reorganisation energy of the Fe(CN)3?6/Fe(CN)4?6 redox couple. 相似文献
59.
Stockburger Jessica; Weike Almut I.; Hamm Alfons O.; Schupp Harald T. 《Canadian Metallurgical Quarterly》2008,122(4):936
Event-related brain potentials (ERPs) were used to examine whether the processing of food pictures is selectively modulated by changes in the motivational state of the observer. Sixteen healthy male volunteers were tested twice 1 week apart, either after 24 hr of food deprivation or after normal food intake. ERPs were measured while participants viewed appetitive food pictures as well as standard emotional and neutral control pictures. Results show that the ERPs to food pictures in a hungry, rather than satiated, state were associated with enlarged positive potentials over posterior sensor sites in a time window of 170-310 ms poststimulus. Minimum-norm analysis suggests the enhanced processing of food cues primarily in occipito-temporo-parietal regions. In contrast, processing of standard emotional and neutral pictures was not modulated by food deprivation. Considered from the perspective of motivated attention, the selective change of food cue processing may reflect a state-dependent change in stimulus salience. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
60.
Albert Kochendoerfer Kunihiko Kobayashi Horst Dieter Schulze Karl Edgar Hagedorn Ulrich Ruediger 《Engineering Fracture Mechanics》1976,8(4):737-741
The flow and fracture stresses, σyg and σfg (δ = crack tip displacement), of sharply notched bending specimens of a structural steel U St 37-1 are measured in the temperature range from full scale to small scale yielding. The best adaption of the experimental results for σfg is obtained by a curve which exhibits an intermediate transition, i.e. which follows in a temperature range between an upper, TtM1 and a lower, Ttl1, transition temperature to the curve σyg(T) for the flow stress with a constant δ = δ1. This transition corresponds to that of the slip to the twin nucleated fracture. Two analyses [3,5] according to the local fracture stress, σf*, concept show that the amount and the temperature dependence of σf* are somewhat different for both methods, but that both exhibit an increase of σf* in the transition range. It is concluded that each transition in the nucleation mode of the fracture is connected with such a transition in the fracture stress. It may, however, become indistinct or even be covered by the scatter of the experimental points. 相似文献