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Software and Systems Modeling - Industrial control applications are usually designed by domain experts instead of software engineers. These experts frequently use visual programming languages based...  相似文献   
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The ability to stack nanosheet transistors is an important prerequisite for the realization of vertically monolithic 3D integrated circuits enabling higher integration densities of functions and novel circuit topologies that relax miniaturization constraints. In this respect, a wafer-scale platform is presented embedding high-quality nanoscale polycrystalline Ge channels into monolithic metal-semiconductor heterostructures. Thereto, a fabrication scheme comprising a combination of flash lamp annealing, crystallizing ultra-thin amorphous Ge nanosheets, and a thermally induced Al-Ge exchange reaction is demonstrated, facilitating the formation of self-aligned Al leads enabling sharp Al-Ge heterojunctions. The high quality of the obtained polycrystalline Al-Ge-Al heterostructure nanosheets is confirmed by µ-Raman, scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron backscatter diffraction measurements. Embedded in back- and top-gate field-effect transistor architectures, the electrical transport in polycrystalline Al-Ge-Al heterostructures is systematically analyzed. Enabling a complementary metal-oxide-semiconductor compatible wafer-scale accessibility of high-quality polycrystalline Ge with self-aligned Al contacts, the proposed platform significantly contributes to the development of a broad spectrum of emerging 3D integrated Ge nanodevices.  相似文献   
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Oil and natural gas have been limited supply at rising costs. Physical and economic information on existing energy use and, especially, on new technologies are seriously limited, and methods for projecting technical change are controversial.  相似文献   
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In this Letter we report the atypical self-activation of gallium (Ga) implanted by focused ion beam (FIB) into germanium nanowires (Ge-NWs). By FIB implantation of 30 keV Ga(+) ions at room temperature, the Ge-NW conductivity increases up to 3 orders of magnitude with increasing ion fluence. Cu(3)Ge heterostructures were formed by diffusion to ensure well-defined contacts to the NW and enable two point I/V measurements. Additional four point measurements prove that the conductivity enhancement emerges from the modification of the wires themselves and not from contact property modifications. The Ga distribution in the implanted Ge-NWs was measured using atom probe tomography. For high ion fluences, and beginning amorphization of the NWs, the conductivity decreases exponentially. Temperature dependent conductivity measurements show strong evidence for an in situ doping of the Ge-NWs without any further annealing. Finally the feasibility of improving the device performance of top-gated Ge-NW MOSFETs by FIB implantation was shown.  相似文献   
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Elektronenoptische Untersuchungen an in Zugversuchen unterschiedlich bleibend verformten Proben des Stahles Ck 45 mit rd. 0,45% C zur Überprüfung der heutigen Vorstellungen zur Verformung.  相似文献   
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Temperaments are often regarded as biologically based psychological tendencies with intrinsic paths of development. It is argued that this definition applies to the personality traits of the five-factor model. Evidence for the endogenous nature of traits is summarized from studies of behavior genetics, parent–child relations, personality structure, animal personality, and the longitudinal stability of individual differences. New evidence for intrinsic maturation is offered from analyses of NEO Five-Factor Inventory scores for men and women age 14 and over in German, British, Spanish, Czech, and Turkish samples (N?=?5,085). These data support strong conceptual links to child temperament despite modest empirical associations. The intrinsic maturation of personality is complemented by the culturally conditioned development of characteristic adaptations that express personality; interventions in human development are best addressed to these. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
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