三塘湖盆地上古生界烃源岩镜质组反射率异常研究

镜质组反射率是评价有机质成熟度的重要指标 ,然而由于地质因素和测试技术的原因 ,镜质组反射率测量值常与预计值有一定的偏差。在三塘湖盆地上古生界烃源岩中 ,可以观察到镜质组反射率的局部增强和镜质组反射率的抑制。局部增强多分布在上二叠统的烃源岩中 ,主要与火山活动有关。这种反射率的增强在平面上分布广泛 ,但纵向上影响范围较小。反射率的抑制是在上古生界烃源岩含有较高含量的腐泥组分背景下产生的。用氢指数模板方法对抑制进行了校正 ,抑制的幅度最大可达 0 .3%     

关于Vague集的模糊熵及其构造

本文分析了Vague集的性质,给出了将Vague集变换为Fuzzy集的转换函数,并讨论了其性质。分析了关于Vague集的模糊熵的直观特性,在此基础上我们给出了Vague集的模糊熵的定义。最后给出了一个关于Vague集的模糊熵的构造方法。     

A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications

A silicon bipolar process for RF and microwave applications, which features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV/sub CEO/, optional 0.7-/spl mu/m (L/sub eff/) NMOS transistors with p/sup +/ polysilicon gates for switch applications, lateral pnp transistors, high and low valued resistors, p/sup +/ polysilicon-to-n/sup +/ plug capacitors, and inductors is described. The npn transistors utilize nitride-oxide composite spacers formed using sacrificial TEOS spacers, a process which is simpler than the previously reported composite spacer processes. Use of the composite spacer structure virtually eliminates problems relating to the extrinsic-intrinsic base link-up and reduces plasma induced damage associated with the conventional spacer process. Microwave and RF capabilities of the process up to several GHz are demonstrated by fabricating and characterizing RF amplifiers, low noise amplifiers, and RF switches.<>     

无线数据通信网发展趋势

无线数据通信具有两大发展趋势，即低速的广域移动数据网及高速的局域无线数据网。本文介绍了其技术特点、应用情况和市场前景，分析了无线数据通信传输技术、网络结构和媒质接入控制等问题。     

An implementation of the vectorial finite element analysis ofanisotropic waveguides through a general-purpose PDE software

This paper reports on the major progress in the development of an intelligent, interactive and automated system, based on the vector finite element method, and implemented within PDE/Protran problem solving environment. The system is known as WAVEGIDE and was originally developed by the authors for an efficient solution of inhomogeneous dielectric waveguides. In this paper, it has been further extended to the solution of anisotropic waveguiding structures. With our system, through an interactive “question-and-answer” session, which requires minimal knowledge of programming, the problem can be defined using high level PDE/Protran commands. It can then be simply and quickly solved by the main processor within this intelligent environment. To verify the convergence and accuracy of the present approach, numerical results (with respect to the grid density and element order) for a rectangular metallic waveguide half filled with dielectric are given and compared with other finite element methods. Numerical results for an anisotropic dielectric rectangular waveguide are also presented. These results clearly illustrate the accuracy and the ease of use of the modified WAVEGIDE program     

Ultralow sidelobe-level integrated acoustooptic tunable filtersusing tapered-gap surface acoustic wave directional couplers

We propose a new weighted-coupling scheme using tapered-gap surface acoustic wave directional couplers for realization of ultralow sidelobe-level integrated acoustooptic tunable filters (IAOTF's). Appropriate design analysis has been carried out for 30-mm-long filters operating at an optical wavelength of 1.55 μm in an X-cut Y-propagating LiNbO₃ substrate. New synthesized weighting functions have been used for the improvement of sidelobe level suppression over existing single-stage filters by as much as 27 dB. The -20 dB mainlobe width of the resulting IAOTF's varies from 2.7 to 3.9 nm only for the worst sidelobe levels ranging from -30.6 to -44.7 dB, respectively. It has also been shown that further suppression of sidelobe levels by 3-9 dB is possible if the filter is underdriven at 80% mode-conversion efficiency     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

蚕庄金矿倾斜采场的地压研究

本文使用工程地质、室内试验及数值分析的方法对蚕庄金矿的倾斜矿房的地压活动规律进行了研究，得出了一些有价值的结论。     

Essential SMSs: developing a service management scheme for semiconductor factory management systems

A semiconductor factory contains hundreds of pieces of equipment. More reliable service by equipment managers is required to increase the utilization of equipment and improve product quality and yield. Therefore, developing a reliable service management scheme (SMS) for semiconductor factory management systems is essential. This study presents an SMS that applies Jini Technology and uses the design by contract technologies. The SMS has error-detecting and function-replacing capabilities. The SMS detects the malfunctioning of an equipment manager (service) and sends an event notice to the factory manager. The GEV in the SMS archives the credit values of all of the equipment managers so that the factory manager can select better equipment managers for service by checking their credit values. The illustrative example and the evaluation of the reliability improvement reveal that the proposed SMS provides an efficient, reliable, fault tolerant, and cost-effective mechanism for semiconductor factory management systems. Lastly, this illustrative example is successfully implemented and demonstrated and the core technology of SMS is transferred to and commercialized by Charming Systems Corporation.