基于全局最优的被动多传感器多目标轨迹关联算法

多目标轨迹关联问题是天基光学跟踪系统的核心和难点之一。传统的分布式轨迹关联方法基于目标的3维轨迹信息,不适用于被动传感器的2维轨迹关联问题。为此,该文以倾角差为统计检验量,建立轨迹统计检验模型,提出基于全局最优思想的轨迹关联算法,并用密集多目标场景进行算法的蒙特卡罗仿真。结果表明,该轨迹关联算法性能优良,可以有效完成密集目标环境下的被动多传感器多目标轨迹关联任务。     

MOCVD外延生长GaN材料的技术进展

第三代半导体材料GaN由于具有优良性质使其在微电子和光电子领域有广阔的应用前景,目前制备GaN的方法主要有分子束(MBE)、氯化物气相外延(HVPE)、金属有机物化学气相沉积(MOCVD)。其中HVPE技术制备GaN的速度最快,适合制备衬底材料;MBE技术制备GaN的速度最慢;而MOCVD制备速度适中。因而MOCVD在外延生长GaN材料方面得到广泛应用。介绍了MOCVD法外延生长GaN材料的基本理论、发展概况、利用MOCVD法外延生长GaN材料的技术进展。认为应结合相关技术发展大面积、高质量GaN衬底的制备技术,不断完善缓冲层技术,改进和发展横向外延技术,加快我国具有国际先进水平的MOCVD设备的研发速度,逐步打破进口设备的垄断。     

基于移动网数据的城市交通分析研究

传统的智慧交通数据采集方式,包括交通调查、定点监测、摄像机摄像等,技术成熟且精度较高,然而其缺点也非常明显,采集范围小、成本高、施工周期长。而电信行业的大数据具有实时性强、数据量大、覆盖人群广、成本低廉、信息丰富等特点,可为城际交通和市内交通提供丰富的数据支持。基于移动网用户侧计费账单、计费详单以及XDR数据,给出了典型交通应用场景下的分析方法及应用案例。     

空时误差情况下的STAP方法性能分析

空时自适应处理（Space-Time Adaptive Processing,STAP）技术可以实现对机载雷达杂波的有效抑制,显著提高机载雷达对运动目标的检测性能。但在实际工程应用过程中,STAP技术不可避免地会受到各种空时误差的影响,导致其性能严重下降。本文首先给出了各种空时误差的数学模型,然后从目标导向矢量失配和杂波自由度增加两方面系统分析了误差影响STAP性能的内在机理,并以信杂噪比（Signal to Clutter plus Noise Ratio,SCNR）损失为指标分析了不同误差对STAP性能的影响,最后通过仿真实验对相关分析进行了验证。本文工作量化了不同误差对STAP性能的影响程度,可为机载脉冲多普勒雷达空时误差补偿提供重要的理论支撑。      

高职“数字电子技术”课程教学模式改革探索

“数字电子技术”是在高职院校教学发展的过程中,相对来说比较重要的一门课程,在很大程度上对学生的后续课程学习产生较大影响。因此,这门课程的教学模式等都会对课程的教学质量优劣产生相应的影响。经济在发展,时代在进步,在新的时代条件下进行高职“数字电子技术”课程教学模式的改革是符合社会发展潮流并且有利于社会的整体发展的。文章将从对高职“数字电子技术”的教学进行简单介绍出发,找出目前高职院校“数字电子技术”课程教学模式存在的问题,并提出相关的解决对策,希望可以对我国高职“数字电子技术”课程教学的发展有所帮助。     

A Systematic Approach to Achieving High Performance Hybrid Lighting Phosphors with Excellent Thermal‐ and Photostability

The authors have designed and synthesized a family of high‐performance inorganic–organic hybrid phosphor materials composed of extended and robust networks of one, two, and three dimensions. Following a bottom‐up solution‐based synthetic approach, these structures are constructed by connecting highly emissive Cu₄I₄ cubic clusters via carefully selected ligands that form strong Cu? N bonds. They emit intensive yellow‐orange light with high luminescence quantum efficiency, coupled with large Stokes shift, which greatly reduces self‐absorption. They also demonstrate exceptionally high framework‐ and photostability, comparable to those of commercial phosphors. The high stabilities are the result of significantly enhanced Cu? N bonds, as confirmed by the density functional theory (DFT) binding energy and electron density calculations. Possible emission mechanisms are analyzed based on the results of theoretical calculations and optical experiments. Two‐component white phosphors obtained by blending blue and yellow emitters reach an internal quantum yield as high as 82% and correlated color temperature as low as 2534 K. The performance level of this subfamily exceeds all other types of Cu–I based hybrid systems. The combined advantages make them excellent candidates as alternative rare‐earth element‐free phosphors for possible use in energy‐efficient lighting devices.     

基于元胞自动机的无线传感器网节能路由协议

节能是设计无线传感器网路由协议首先要解决的问题.针对无线传感器网拓扑演化过程所呈现的时空动力学特性,基于源自生物学的元胞自动机理论,提出无线传感器网节能路由协议(AODV-ECA).仿真结果及分析表明,该算法能有效减少传感节点能量消耗,延长无线传感器网生存时间.     

双脉冲激光诱导铝等离子体的双波长干涉诊断

双脉冲激光诱导等离子体在激光加工、元素检测、材料去除等领域有广阔的应用前景和发展空间,对其进行诊断具有重要意义。针对延迟双脉冲激光诱导铝等离子体的作用效果和影响机理,采用双波长干涉法对其时间演化规律展开研究。基于马赫-曾德尔干涉仪搭建了双波长干涉诊断系统,得到了双脉冲激光诱导等离子体干涉图。通过对干涉图的处理和分析,得到了等离子体电子密度随双脉冲激光延迟时间的变化规律。结果表明,随着双脉冲激光延迟时间的增加,第二束脉冲激光对等离子体电子密度的增强效果先加强后减弱。其中,双脉冲激光延迟时间为10 ns时,对等离子体电子密度的增强效果最强,在30 ns时刻,其中心区域平均电子密度可达6.49×1019 cm?3,相较于同等能量单脉冲激光诱导等离子体提升了26%。同时研究了延迟时间对第二束脉冲激光作用机制的影响。研究结果为双脉冲激光诱导等离子体的优化方向提供了参考。     

Halogenated Ti3C2 MXenes Prepared by Microwave Molten Salt for Hg0 Photo-Oxidation

Ti₃C₂ MXenes with different halogen modifications are prepared rapidly and efficiently by microwave molten salt method, and the MXene surface functional group modification is successfully achieved to address the problems of low purity, complex functional groups, and uncontrollable energy band structure of MXenes obtained by traditional liquid phase etching. Among them, the modification of the iodine (I) functional group onto the surface of Ti₃C₂ changes the energy band structure and band gap, resulting in easier photoexcitation and more photogenerated carriers. The increased Fermi energy is closer to the conduction band, the decreased surface work function weakens the electron confinement ability. The photogenerated carriers can migrate to the surface of the material more easily with extended lifetime, so the activity of the catalyst is improved. Further, for gaseous monomeric mercury (Hg⁰) photo-oxidative removal, Ti₃C₂-I₂ exhibits 85.5% efficiency of Hg⁰ photo-oxidative removal under visible light. Based on the experimental characterization and density functional theory calculations, a mechanism for the photo-oxidative removal of Hg° from Ti₃C₂-I₂ MXene is proposed, which provides a valuable strategy for studying Ti₃C₂ MXenes in the field of photocatalysis.     

Giant Anomalous Hall and Nernst Conductivities in Magnetic All-d Metal Heusler Alloys

All-d Heuslers are a category of novel compounds combining versatile functionalities such as caloric responses and spintronics with enhanced mechanical properties. Despite the promising transport properties (anomalous Hall (AHC) and anomalous Nernst (ANC) conductivities) shown in the conventional Co₂XY Heuslers with p-d hybridization, the all-d Heuslers with only d-d hybridization open a new horizon to search for new candidates with outstanding transport properties. In this work, the AHC and ANC are evaluated for thermodynamically stable ferro/ferri-magnetic all-d-metal regular Heusler compounds based on high-throughput first-principles calculations. It is observed that quite a few materials exhibit giant AHCs and ANCs, such as cubic Re₂TaMn with an AHC of 2011 S cm^-1, and tetragonal Pt₂CrRh with an AHC of 1966 S cm^-1 and an ANC of 7.50 A m^-1K^-1. Comprehensive analysis on the electronic structure reveals that the high AHC can be attributed to the occurrence of the Weyl nodes or gapped nodal lines in the neighborhood of the Fermi level. The correlations between such transport properties and the number of valence electrons are also thoroughly investigated, which provides a practical guidance to tailor AHC and ANC via chemical doping for transverse thermoelectric applications.