客户机／服务器计算环境

本文介绍了客户机／服务器计算环境的基本概念和产生背景，阐述了客户机／服务器计算中操作系统的选择原则及企业级客户机／服务器计算环境的特点。     

镀锌测厚仪

本文叙述了Ｘ射线荧光测厚仪的原理、特点及测量头的设计考虑原则。并以我们研制的两种镀锌测得仪为例作了详细说明。     

地震勘探震源药柱技术进展

介绍国内外震源药柱产品现状,着重介绍了湖北凯龙化工集团股份有限公司近期所取得的技术进展,探讨了一些施工设想及地震勘探震源药柱今后可能的发展方向.     

死髓变色前牙的激光漂白治疗临床评价

本文的研究目的是探讨激光冠内漂白治疗死髓牙变色的治疗作用。材料与方法 :漂白基本操作同激光活髓牙变色的漂白操作程序。先将牙龈及口唇有效防护 ,将漂白药物放在唇舌两面并同时封入根冠内。结果 :所有牙齿的灰暗变色均有 3- 5级的色度提高。平均治疗次数为 3.4± 0 .75 ,脱色 85 %以上的占 89%。结论 :牙齿创伤和牙髓分解是冠内变色的常见原因 ,激光冠内漂白是治疗这种变色的有效手段 ,可以完全恢复患者的自信。     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

Dipole radiation in the proximity of a chiral slab

Radiation of an electric dipole located along an arbitrary direction in the presence of a chiral slab is formulated using matrix analysis in conjunction with Fourier transform techniques. Moreover, dyadic Green's function of such a structure may be determined for further investigation porpose.     

双辊铸轧机生产工艺对组织和性能的影响

就用双辊铸轧机(TRC)生产薄、宽铸轧带技术进行研究并优化铸轧工艺。研究结果表明：3mm厚的铸轧带不仅表面变形．而且整个厚度内部层都发生变形，表面层的铝基中具有较高的合金元素饱和度。     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress