Simulation d’un filtre en technologie microruban

The pedagogical product presented below is a practical work intended to the electrical engineering students, fourth year, of the National Institut of Applied Sciences of Rennes. This work is a part of filter realisation programme either in microstrip technology or lumped element. The aim of this practical work is restricted to calculate by optimizing all the basic parameters of the filter realization. Thus, an optimization and simulation work is performed on computer, by using a Touchstone software product of the Electronic Engineering Software society, to obtain parameter values close to the wished ones. This practical work is performed by groups of two students during three hours.     

1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs

Experiments to increase the specific capacitance of MOS capacitors consisting of HfO₂ on a passivating interfacial layer (IL) of amorphous Si (a-Si) on GaAs are described. XPS analysis of the layers and electrical measurements on the capacitors are combined to study the evolution of the gate stack during deposition and subsequent heat treatments. It is shown that oxidation of the a-Si IL is a major factor in preventing the attainment of a scaled capacitance equivalent thickness (CET). By controlling the deposition of the layers, the gate metal and the heat treatments, a highly scaled gate stack with a CET of 1.2 nm and a leakage reduction of more than 4 orders of magnitude with respect to SiO₂/Si was realized.     

Effects of Geometrical Discontinuities on Distributed Passive Intermodulation in Printed Lines

This paper presents the results of experimental study of passive intermodulation (PIM) generation in microstrip lines with U-shaped and meandered strips, impedance tapers, and strips with the profiled edges. It is shown that the geometrical discontinuities in printed circuits may have a noticeable impact on distributed PIM generation even when their effect is indiscernible in the linear regime measurements. A consistent interpretation of the observed phenomena has been proposed on the basis of the phase synchronism in the four-wave mixing process. The results of this study reveal new features of PIM production important for the design and characterization of low-PIM microstrip circuits.      

A Threshold-Free LLR-Based Scheme to Minimize the BER for Decode-and-Forward Relaying

In cooperative communications, the problem of error propagation has a detrimental effect on the diversity order of the wireless system. To mitigate such an effect, we present a relaying scheme that is based on the absolute value of the log-likelihood ratio (LLR) of the received message signals at both the relay node and the destination node. The calculated LLR values are then compared to each other and based on the result of the comparison, a decision is made on whether or not to activate the relay node. The proposed scheme does not rely on any threshold, and is thus simple in nature. A closed-form expression is derived for the bit-error-rate (BER) of the proposed scheme. The theoretical developments are validated by simulations. As a means for performance measurement, the proposed scheme is compared to its counterparts and is shown to provide a better BER performance at a much lower complexity. Furthermore, a closed-form expression of the outage probability is also derived.     

A Uniform Balancing Energy Routing Protocol for Wireless Sensor Networks

In wireless sensor network, the power supply is, generally, a non-renewable battery. Consequently, energy effectiveness is a crucial factor. To maximize the battery life and therefore, the duration of network service, a robust wireless communication protocol providing a best energy efficiency is required. In this paper, we present a uniform balancing energy routing protocol. In this later the transmission path is chosen for maximizing the whole network lifetime. Every transmission round, only the nodes which have their remaining energies greater than a threshold can participate as routers for other nodes in addition to sensing the environment. This choice allows the distribution of energy load among any sensor nodes; thus extends network lifetime. The experimental results shows that the proposed protocol outperforms some protocols given in the literature.     

Effect of annealing on Zn1−xCoxO thin films prepared by electrodeposition

Polycrystalline thin films of Zn_1−xCo_xO with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400 °C. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorption bands in the visible with the amount of Co. Thermal annealing produces an increase of the intensity of the Co²⁺-related absorption bands revealing that higher amount of Co atoms are occupying Zn sites.     

Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

GaAsBi alloy was grown on (1 0 0) GaAs substrate by metalorganic vapour phase epitaxy. GaAsBi film was elaborated with V/III ratio of 9.5, trimethyl bismuth molar flow rate of about 3 μmol/min and a growth temperature of 420 °C. The surface morphology of GaAsBi alloy was investigated by means of scanning electron microscopy and atomic force microscopy. Results show surface Bi droplets formation. High-resolution X-ray diffraction (HRXRD) curves present more diffraction peaks other than that of GaAs substrate. Detailed HRXRD characterization shows that diffraction peaks splitting do not represent a crystallographic tilting with respect to GaAs substrate. Diffraction patterns also show a remarkable stability of the alloy against thermal annealing.     

Average and randomized communication complexity

The communication complexity of a two-variable function f(x,y) is the number of information bits two communicators need to exchange to compute f when, initially, each knows only one of the variables. There are several communication-complexity measures corresponding to whether (1) the worst case or average number of bits is considered, (2) computation errors are allowed and (3) randomization is allowed. Tight bounds are provided for the typical behavior of all bounded-error communication-complexity measures of Boolean functions. In the present work, the authors formally define the deterministic model. They describe randomized protocols and compare them to deterministic ones. They both survey previous work and describe original results     

A behavioral-based multi-agent optimization algorithm for system level radio design

This paper introduces a multi-agent behavioral-based optimization algorithm for system level radio design. Making multi-standard wireless communication receivers that meet their specs while keeping the requirements of the individual blocks as relaxed as possible is the goal of this algorithm. In order to achieve this goal a “divide and conquer” approach is proposed. Different agents focus on different objectives that are pursued in parallel. Agents adopt different behaviors depending on the status of the environment and their interaction with other agents. Agents are cooperative by default as they try to meet their spec without making changes that affect other agents. However, more aggressive behaviors that lead to global changes can be adopted when needed. The interaction between these simple entities yields an emergent behavior able to deal smoothly with the complexity of the problem at hand.     

CMOS RF switched capacitor bandpass filter tuned by ring VCO

A new RF switched capacitor bandpass filter and its command circuit made up of a ring voltage controlled oscillator with ‘XOR’ gates are proposed. Implemented in a standard CMOS technology, this circuit is intended to be used in a subset of professional mobile phone applications [380–520 MHz]. Experiments carried out on a prototype show a tunable center frequency range of 260 MHz [240–500 MHz], with a quality factor that can be as high as 300.