Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.     

The lattice dynamics of the Fe(tpa) (NCS)2 complex : light-induced excited spin state trapping effect

A light-induced excited spin state trapping (LIESST) experiment for a thermal gradual spin crossover complex, Fetris (2-pyridylmethyl) amine(NCS)2 or Fe(tpa) (NCS)2, was attempted for the first time. The high spin (HS) state after light inducement stayed metastable over a period of days without relaxation at 10 K. Intersystem relaxation from a high to a low spin (LS) complex occurred at 50 K after bleaching at 10 K. Investigation of the Mossbauer spectra of the LIESST and relaxation experiment indicated that the Debye–Waller factor was a correlation parameter of the HS fraction and that the co-operative effect played a role in the relaxation process for such a solid compound. This revised version was published online in November 2006 with corrections to the Cover Date.     

A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability     

Quick estimation of rare events in stochastic networks

This paper presents a method for fast estimation of probabilities of rare events in stochastic networks, with a particular emphasis on coherent reliability systems. The method is based on the concepts of likelihood-ratios (LR), change of probability measure and the bottleneck-cut in the network. Both polynomial and exponential-time Monte Carlo estimators are defined, and conditions under which the time complexity of the proposed LR estimators is bounded by a polynomial are discussed. The accuracy of the method depends only on the size (cardinality) of the bottleneck-cut, not on the topology and actual size of the network. Supporting numerical results are presented, with the cardinality of the bottleneck-cut ⩽20     

Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors

We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques.     

Wortmannin enhances CPP32-like activity during neuronal differentiation of P19 embryonal carcinoma cells induced by retinoic acid

P19 EC cells undergoes apoptosis during neuronal differentiation induced by retinoic acid. Two CPP32-like proteases, CPP32 and Mch-3, are expressed in untreated and retinoic acid-treated P19 EC cells. CPP32-like activity is remarkably increased in apoptosis during neuronal differentiation of P19 EC cells. Inhibition of CPP32-like proteases prevents apoptosis, suggesting that activation of CPP32-like proteases play central roles in the apoptosis during neuronal differentiation of P19 EC cells. Wortmannin, PI-3K inhibitor, enhances the CPP32-like activity of the retinoic acid-treated P19 EC cells. PI-3K may be involved in the apoptosis during neuronal differentiation as negative regulator.     

Automatic tuning of decentralized PID controllers for MIMO processes

An automatic tuning algorithm for decentralized PID control in multiple-input multiple-output (MIMO) plants is presented. This algorithm generalizes the authors' recent auto-tuner for two-input two-output systems to any number of inputs and outputs. The algorithm consists of two stages. In the first, the desired critical point, which consists of the critical gains of all the loops and a critical frequency, is identified. The auto-tuner identifies the desired critical point with almost no a priori information about the process. During the identification phase all controllers are replaced by relays, thus generating limit cycles with the same period in all loops. It is shown that each limit cycle corresponds to a single critical point of the process. By varying the relays parameters different points can be determined. The auto-tuner contains a procedure which converges rapidly to the desired critical point while maintaining the amplitudes of the process variables as well as of the manipulated variables within prespecified ranges. In the second stage, the data of the desired critical point is used to tune the PID controllers by the Ziegler-Nichols rules or their modifications. This paper focuses on the first stage. The steady-state process gains, which are required for the appropriate choice of the desired critical point, are determined by the auto-tuner in closed-loop fashion simultaneously with the identification of the critical point. The identification of the process gains is achieved at no extra plant time. Based upon a large number of simulated cases, the proposed auto-tuner seems to be efficient and robust. The paper discusses the underlying principles of the auto-tuner and its properties and capabilities are demonstrated via examples.     

In Situ ceramic particle-reinforced aluminum matrix composites fabricated by reaction pressing in the TiO2 (Ti)-Al-B (B2O3) systems

Particulate TiB₂ reinforced aluminum-based metal matrix composites (MMCs) were successfully fabricated by means of the reaction processing method. TiB₂ particulates were formed in situ through the reaction of Ti and B in Ti-Al-B, TiO₂ and B in TiO₂-Al-B, and TiO₂ and B₂O₃ in TiO₂-Al-B₂O₃ systems. The results showed that in situ TiB₂ particulates formed in the Ti-Al-B system had a size of 5 μm and they exhibited block and rodlike structures. Moreover, coarse Al₃Ti blocks several tens of micrometers in size were also formed simultaneously. On the other hand, equiaxed Al₂O₃ and TiB₂ particulates with a size of less than 2 μm were formed in situ in the TiO₂-Al-B and TiO₂-Al-B₂O₃ systems. The Al₃Ti phase was completely eliminated in the TiO₂-Al-B system with increasing B content. Tensile tests revealed that the Al₂O₃ · TiB₂/Al composite fabricated from the TiO₂-Al-B system exhibits excellent mechanical properties. The yield strength of the Al₂O₃ · TiB₂/Al composite appeared to increase with increasing TiB₂ content. The yield strength of the Al₂O₃ · TiB₂/Al composite could be further increased by introducing CuO into the TiO₂-Al-B system. Such an increment in mechanical strength arose from the strengthening effect caused by the Al₂Cu precipitates. The incorporation of CuO had no effect on the in situ reaction process of the TiO₂-Al-B system. Finally, the effect of SiC addition on the microstructure and mechanical properties of the composites fabricated from the TiO₂-Al-B and TiO₂-Al-B-CuO systems was also investigated.