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排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
O. G. Devoino M. A. Kardapolova S. Laber E. A. Feldstein O. V. Diyachenko 《Journal of Engineering Physics and Thermophysics》2004,77(2):372-376
The wear resistance of Ni–Cr–B–Si–C coatings after laser treatment with a doping covering under dry friction conditions has been investigated. The microstructure of coatings after fusion by a gas burner and a laser beam and the roughness and waviness parameters of the friction surfaces before and after wear have been investigated. 相似文献
992.
Stress State of Bent Buried Pipelines 总被引:1,自引:0,他引:1
The authors consider edge effects in buried pipelines that occur in the region of joining of a straight buried pipe and a bent insert (factory bend, elbow, or an elastically bent segment). The action of those effects results in the appearance of additional bending moments, which are proportional to the difference between the axial force in an infinite straight pipeline and that in a closed-end pipe, and depend on the geometrical parameters of the pipeline and physical-mechanical characteristics of the soil. Specific examples of analysis of elastic interaction of a pipeline with the soil for pipe bends with various radii of the bend arc are offered. It is shown that additional bending stresses may exceed appreciably the stresses from the axial force, and therefore, they should be taken into account when designing and building pipelines. The solution for an elastically bent segment has been obtained and analyzed. 相似文献
993.
O.V. TretyakV.A. Skryshevsky V.A. VikulovYu.V. Boyko V.M. Zinchuk 《Thin solid films》2003,445(1):144-150
The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of Ev+0.81 eV at the PS layer growing to 90 nm wide. 相似文献
994.
Noise modeling for RF CMOS circuit simulation 总被引:2,自引:0,他引:2
Scholten A.J. Tiemeijer L.F. van Langevelde R. Havens R.J. Zegers-van Duijnhoven A.T.A. Venezia V.C. 《Electron Devices, IEEE Transactions on》2003,50(3):618-632
The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1/f noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs. 相似文献
995.
996.
V. P. Uvarov 《Glass and Ceramics》2003,60(11-12):359-360
A method for constructing experimental models of drawing optical rods based on experimental data is considered. The models obtained make it possible to identify admissible technological parameter fluctuations in the range selected. 相似文献
997.
998.
V. V. Vavilova V. M. Ievlev A. P. Isaenko Yu. E. Kalinin Yu. K. Kovneristyi N. A. Palii B. G. Sukhodolov V. N. Timofeev 《Inorganic Materials》2003,39(1):72-76
The effect of pulsed photon annealing with energy densities from 1.4 to 42 J/cm2 for various lengths of time on the structure of the amorphous alloy Fe79P14.2Si4.4Mn2.2V0.2 was studied by x-ray diffraction, differential scanning calorimetry, and transmission electron microscopy. The results demonstrate that short-term irradiation with low energy densities leads to surface relaxation of the amorphous alloy, increases the strength of the surface layer, and reduces the internal-friction peak. Longer term photon annealing leads to crystallization of the alloy throughout the sample thickness. 相似文献
999.
1000.