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1.
R Beyer H Burghardt R Reich E Thomas T Gessner D.R.T Zahn 《Microelectronics Reliability》1998,38(2):144
Thin SiO2 and SiOxNy layers were grown on silicon using Rapid Thermal Processing (RTP) in either O2 or N2O ambient. Subsequent annealing or nitridation was performed in order to improve the electrical stability. The composition of the films, in particular the incorporation of nitrogen and hydrogen, has been studied. We obtained the distribution of states at the Si/insulator interface through the evaluation of CV measurements and investigated the charge trapping in the layers analysing the voltage–time behaviour during Fowler–Nordheim constant current injection. Furthermore, assuming a trap assisted tunneling mechanism, the influence of near interface trap states on the current voltage characteristic was used to derive an effective insulator state distribution. 相似文献
2.
Andrzej Ciepielewski 《International journal of parallel programming》1991,20(6):421-451
Implementation of or-parallel Prolog systems offers a number of interesting scheduling problems. The main issues are the interaction between memory models and scheduling, ordering of multiple solutions, and scheduling of speculative work. The problems occur partly because of the design choices (e.g. the choice of a memory model), and partly because of the desire to maintain observational equivalence between parallel and sequential implementations of Prolog, while achieving high efficiency. In the first part of this paper a common framework for discussing scheduling in or-parallel systems is introduced, and also a collection of issues that must be addressed in such systems is presented. In the second part of the paper we survey a number of solutions to these problems comparing their efficiency whenever possible. We close the survey with a short discussion of open problems.Current association: Carlstedt Elektronik AB 相似文献
3.
Andrzej Malag Jacek Ratajczak Jerzy Gazecki 《Materials Science and Engineering: B》1993,20(3):332-338
Selective wet chemical etching of the AlxGa1−xAs/GaAs system has been applied to heterostructure characterization. Samples of LPE grown AlGaAs/GaAs laser double-heterostructures and separate confinement heterostructures as well as antiresonant reflecting optical waveguides heterostructures were treated with “I2 solution” (I2:KI:H2O) and hydrochloric acid. These compounds selectively etch the ternary AlxGa1−xAs layers, but with different “threshold composition” xth values (the x value is that above which the etching rate of a given compound increases sharply). Selectively etched samples have been examined by SEM. The experimental dependence of etching rate on the x value for I2 solution has been derived. From this dependence, the x composition of any ternary layer can be estimated simply. Observations were made of the “microscopic” properties of the heterostructure, such as the smoothness of the interfaces and the uniformity of layers. All imperfections resulting from the growth process, such as interface perturbations or compositional nonuniformity of layers, are clearly seen. An additional advantage of this etching technique is its simplicity. It allows quick examination of grown heterostructure for the selection of wafers for further processing. 相似文献
4.
The scope of the paper is the assessment of the technical risk involved in long-term operation of power units. Detailed analyses have been conducted for steam turbine components. The sources and consequences of risk have been identified and the probability of turbine components failure calculated. The quantitative assessment of the risk has been made and possibilities of its reduction discussed. 相似文献
5.
Teresa Mikołajczyk Grażyna Janowska Mariusz Wójcik Maciej Boguń Andrzej Kurzak 《应用聚合物科学杂志》2008,109(4):2513-2521
The rheological properties of spinning solutions of polyacrylonitrile in dimethyl formamide (DMF) containing various amounts of a ferromagnetic nanoaddition were investigated. The porous structure, the strength and thermal properties of fibers obtained from these solutions were assessed, as well as the uniformity of the nanoaddition distribution on the fiber surface was estimated. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008 相似文献
6.
Andrzej Lingas 《Information Processing Letters》2007,104(6):220-227
In 1986, Keil provided an O(n2) time algorithm for the problem of covering monotone orthogonal polygons with the minimum number of r-star-shaped orthogonal polygons. This was later improved to O(n) time and space by Gewali et al. in [L. Gewali, M. Keil, S.C. Ntafos, On covering orthogonal polygons with star-shaped polygons, Information Sciences 65 (1992) 45-63]. In this paper we simplify the latter algorithm—we show that with a little modification, the first step Sweep1 of the discussed algorithm—which computes the top ceilings of horizontal grid segments—can be omitted.In addition, for the minimum orthogonal guard problem in the considered class of polygons, our approach provides a linear time algorithm which uses O(k) additional space, where k is the size of the optimal solution—the algorithm in [L. Gewali, M. Keil, S.C. Ntafos, On covering orthogonal polygons with star-shaped polygons, Information Sciences 65 (1992) 45-63] uses both O(n) time and O(n) additional space. 相似文献
7.
Andrzej Filinski 《Higher-Order and Symbolic Computation》1994,7(1):11-37
In a simply-typed, call-by-value (CBV) language with first-class continuations, the usual CBV fixpoint operator can be defined in terms of a simple, infinitely-looping iteration primitive. We first consider a natural but flawed definition, based on exceptions and “iterative deepening” of finite unfoldings, and point out some of its shortcomings. Then we present the proper construction using full first-class continuations, with both an informal derivation and a proof that the behavior of the defined operator faithfully mimics a “built-in” recursion primitive. In fact, given an additional uniformity assumption, the construction is a two-sided inverse of the usual definition of iteration from recursion. Continuing, we show that the CBV looping primitive is in fact the direct-style equivalent of a continuation-passing-style fixpoint, and that this correspondence extends all the way to traditional definitions of these operators in terms of reflexive types. 相似文献
8.
Andrzej Brykalski 《International Journal of Heat and Mass Transfer》1985,28(3):613-620
In the paper the general Galerkin method has been applied for the determination of the equivalent time constant of diffusion processes. After establishing the step function response the general formulas have been obtained, which allow for the consideration of boundary conditions of various kinds. The method has been illustrated with some numerical examples. 相似文献
9.
The role of silicon dioxide layers in microelectronics and the importance of their integrity are undisputable. From passivating coatings and masking layers for diffusion to ultra-thin tunneling films — all the silicon technology could not exist without silicon dioxide. This review deals with some aspects of the integrity of thin silicon dioxide films for VLSI applications. The problems of dielectric strength and wear-out are considered from the point of view of their mechanisms, models, oxide processing dependence, testing, and measuring. A brief presentation of statistical approaches commonly applied to reliability topics is also included. 相似文献
10.
Bronisław Jańczuk Tomasz Białopiotrowicz Emil Chibowski Andrzej Dawidowicz Anna Kliszcz 《Journal of Materials Science》1990,25(3):1682-1685
The contact angles of water drops and diiodomethane drops on pellets made of controlled porosity glasses have been measured. The surface of the glasses was modified by thermal treatment at 873 K which led to an increase in the surface concentration of boron atoms. Glass modified with Carbowax 20M (polyethylene glycol) and fully hydroxylated glass have also been studied. Using the measured contact angles and modified Young equation, the dispersion and nondispersion components of the glass surface free energy have been calculated. The values show that with increasing heating time (increasing surface density of boron atoms) an increase in the surface polarity takes place. However, the polarity of the same samples decreases after treatment with Carbowax, increasingly so with higher boron atom concentrations. 相似文献