京移通信设计院贯彻ISO9001质量管理体系标准的操作环节

京移通信设计院从1997年启动ISO9000质量管理体系标准贯彻落实（简称贯标）工作至今已八年多。八年来本院质量管理工作上了两个台阶。     

气缸可靠性试验装置的研制

为了进行气缸可靠性试验研究,针对缸径为50mm、行程为160mm的气缸研制了一套气缸可靠性试验装置.5个月的不间断试验测试及获得的大量数据表明,该装置运行稳定可靠,满足了气缸可靠性试验的要求.详细介绍了装置试验回路的构成、工作原理和具体实现,测控子系统的硬件构成和软件流程,气缸性能参数测量方法及获得的部分数据.     

A new method for the solution of three dimensional magnetostatic fields, using a scalar potential

A new method "Equivalent Magnetized Region Solution" based on scalar potential for solving 3D magnetostatic fields is presented. The current distribution is transformed into a region of magnetic dipoles and only one scalar potential is used to calculate the field. A program "CMF3D" has been developed by finite element method, equipped with program "MESH" for subdividing field region into elements. Three examples by the solution are presented and compared with results from analytical method or experiment.     

Effects of grain sizes, shapes, and distribution on minimum sizes of representative volume elements of cubic polycrystals

In the literature the concept of representative volume element (RVE) was introduced to correlate the effective or macroscopic properties of materials with the properties of the microscopic constituents and microscopic structures of the materials. However, to date little quantitative knowledge is available about minimum RVE sizes of various engineering materials. In our recent paper [J. Mech. Phys. Solids 50 (2002) 881], a new definition of minimum RVE size was introduced based on the concept of nominal modulus. Numerical experiments using the finite element method (FEM) were then carried out for determining the minimum RVE sizes of more than 500 cubic polycrystals in the plane stress problem, under the assumption that all grains in a polycrystal have the same square shape––called the simple polycrystal model. The major finding is that the minimum RVE sizes for effective elastic moduli have a roughly linear dependence on crystal anisotropy degrees. The present paper takes into account the effect of grain sizes, shapes, and distribution on the minimum RVE sizes for real cubic polycrystals that are formed by crystallization processes. Similar roughly linear dependence is found again, with the slope about 19% lower than that in the simple polycrystal model. This finding is interesting and useful because numerical experiments on minimum RVE sizes for a large number of crystals are quite time-consuming and the simple polycrystal model reduces significantly the FEM pre- and post-processing works. This should be particularly true in numerically testing minimum RVE sizes for three-dimensional polycrystals and for nonelastic properties in future works. With a maximum relative error 5%, all the polycrystals tested have a minimum RVE size of 16 or less times the grain size.     

MIMO系统中简单的扩展空时块编码分集技术研究

本文提出一种多输入多输出（MIMO）天线系统中简单的扩展空时块编码（SSTBC）分集技术，采用沃尔什码来区分各天线发送数据子流。采用这种方法，在系统带宽一定时，不降低发送信息速率，同时接收机简单。不同天线的发送信息经过了所有收一发天线对之间的空间子信道，获得了所有路径的部分空间分集增益，仿真结果表明，这种增益的获得不受限于接收分集阶数，并且随发射天线的增加以一定的线性关系增加。     

跳时超宽带无线电的性能分析

超宽带脉冲无线电是无线通信领域的一种全新技术,有着广阔的应用前景.它是一种基带无载波短脉冲,不同于使用正弦载波的传统通信系统.本文用满足FCC频谱规划的脉冲--高斯脉冲的五阶导数推导了TH-BPSK方式下的跳时超宽带扩频系统的误码与多址性能,并研究了多径对其性能的影响,比较了TH-BPSK 与TH-PPM系统性能,分析结果表明TH-BPSK的性能(未考虑多径)明显优于TH-PPM,但是TH-PPM抗多径性能优于TH-BPSK.     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.