SOI数模混合集成电路的串扰特性分析

采用二维TMA Medici模拟软件对SOI结构的串扰特性进行了分析.模拟发现随着频率的增加,SOI的埋氧化物对串扰噪声几乎不起隔离作用,同时,连接SOI结构的背衬底可以在很大程度上减小串扰的影响.还对减少串扰的沟槽隔离工艺、保护环及差分结构的有效性进行了比较分析,对一些外部寄生参数对串扰的影响也进行了研究.并给出了SOI结构厚膜和薄膜结构体掺杂浓度对噪声耦合的影响,所得到的结果对设计低噪声耦合的SOI数模混合集成电路具有指导性的作用.     

一个适用于模拟电路的深亚微米SOI MOSFET器件模型

从数值解源端和饱和点的表面电势出发,考虑模拟电路对SOI MOSFET模型的一些基本要求如电荷守恒、器件源漏本征对称、各个工作区间连续并且高阶可导以及全耗尽和部分耗尽两种工作模式的转变,构建了一个能够满足这些要求的精确的器件模型．同时包含了深亚微米SOI MOSFET的一些二级效应如漏极诱生势垒降低效应（DIBL）、速度饱和效应、自热效应等．这个模型的参数相对较少并且精确连续,能够满足在模拟电路设计分析中的应用要求．     

电化学电容-电压法表征等离子体掺杂超浅结

采用电化学电容-电压(ECV)法对等离子体掺杂制备的Si超浅p n结进行了电学表征.通过对超浅p n结样品ECV测试和二次离子质谱(SIMS)测试及比较,发现用ECV测试获得的p 层杂质浓度分布及结深与SIMS测试结果具有良好的一致性,但ECV测试下层轻掺杂n型衬底杂质浓度受上层高浓度掺杂影响很大.ECV测试具有良好的可控性与重复性.对不同退火方法等离子体掺杂形成的超浅结样品的ECV系列测试结果表明,ECV能可靠地表征结深达10nm,杂质浓度达1021cm-3量级的Si超浅结样品,其深度分辨率可达纳米量级,它有望在亚65nm节点CMOS器件的超浅结表征中获得应用.     

Energy harvesting with pairs of variable capacitors without control circuits

This work describes several electronic electrostatic generators that can be built using two pairs of complementary variable capacitors, in a way that dispenses control circuits for their operation. In all cases, a basic unstable generator based on an electrostatic charge multiplier is used to bias variable capacitors, and the current generated by these capacitors is then rectified and sent to the load. Experimental versions of the proposed generators were built using variable capacitors made with 3D-printing techniques, moved in a back-and-forth way by a small motor. As these generators operate at high impedance level, always with small currents, they are insensitive to the resistivity of the conductive plastic used to make the variable capacitors. Several new structures are presented, and their properties are evaluated theoretically and experimentally.     

基于GaAs的新型稀磁半导体材料(Ga,Mn)As

介绍了一种基于 Ga As的新型稀磁半导体材料 ( Ga,Mn) As,包括 ( Ga,Mn) As的制备方法、结构特性、磁性质及磁输运性质。最后 ,展望了 ( Ga,Mn) As的应用前景     

Technological development of Brazilian telecommunications in past decades

Brazilian telecommunications sector has undergone important modifications in the last 40 years. From a badly structured system of municipal level operators in 1960, with barely one million fixed lines to a large, nation-wide system with about 50 million fixed plus another 75 million mobile lines in 2005. This work paper reviews the institutional framework of telecommunications industrial and technological policy in Brazil in the last four decades, its results and present situation. Infrastructure and services modernisation and expansion process that happened in early 1970s were carried out at the expense of massive import of products and technology. A government strategy was, then, devised to stimulate local industrial and technological development in telecommunications, under the general guidelines of import substitution policy. Essential to this strategy was the creation of an innovation system around TELEBRÁS Research and Development Centre. This technological development model was successful while a protectionist economic policy existed. When economic and political circumstances could not anymore sustain an import substitution approach, in the 1990-decade, the model fell apart and has not been replaced by any other sectorial policy. A critical assessment is carried out, analysing the adopted actions in face of the digital technology maturing process that occurred in meantime.     

Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n‐channel Polymer Semiconductor

Charge transport is investigated in high‐mobility n‐channel organic field‐effect transistors (OFETs) based on poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2), Polyera ActivInk? N2200) with variable‐temperature electrical measurements and charge‐modulation spectroscopy. Results indicate an unusually uniform energetic landscape of sites for charge‐carrier transport along the channel of the transistor as the main reason for the observed high‐electron mobility. Consistent with a lateral field‐independent transport at temperatures down to 10 K, the reorganization energy is proposed to play an important role in determining the activation energy for the mobility. Quantum chemical calculations, which show an efficient electronic coupling between adjacent units and a reorganization energy of a few hundred meV, are consistent with these findings.     

Self-Adaptive Fault Tolerance in Multi-/Many-Core Systems

This paper presents a novel approach to the design of multi-/many-core systems with an adaptive level of reliability. The approach defines a layer at the operating system level that achieves fault detection/tolerance/diagnosis properties by means of thread replication and re-execution mechanisms. The layer applies the most convenient hardening mechanism to achieve the desired trade-off between reliability and performance by adapting at run-time to the changes of the working scenario. The proposed strategy has been applied in a set of experimental sessions considering a real-world parallel application, to evaluate its benefits on the final system with respect to various strategies selected at design time.     

Crystal Size,Morphology, and Growth Mechanism in Bio‐Inspired Apatite Nanocrystals

Bio‐inspired apatite nanoparticles precipitated in the presence of citrate ions at increasing maturation times are characterized in terms of structure, size, morphology, and composition through advanced X‐ray total scattering techniques. The origin of the platy crystal morphology, breaking the hexagonal symmetry, and the role of citrate ions is explored. By cross‐coupling the size and shape information of crystal domains with those obtained by atomic force microscopy on multidomain nanoparticles, a plausible mechanism underlying the amorphous‐to‐crystal transformation is reconstructed. In the present study, citrate plays the distinct roles of inducing the platy morphology of the amorphous precursor and controlling the thickness of the Ca‐deficient apatite nanocrystals. These findings can open new scenarios also in bone mineralization, where citrate might have a broader role to play than has been thought to date.