DYNAMIC ENVIRONMENT ROBOT PATH PLANNING USING HIERARCHICAL EVOLUTIONARY ALGORITHMS

The problem of path planning deals with the computation of an optimal path of the robot, from source to destination, such that it does not collide with any obstacle on its path. In this article we solve the problem of path planning separately in two hierarchies. The coarser hierarchy finds the path in a static environment consisting of the entire robotic map. The resolution of the map is reduced for computational speedup. The finer hierarchy takes a section of the map and computes the path for both static and dynamic environments. Both the hierarchies make use of an evolutionary algorithm for planning. Both these hierarchies optimize as the robot travels in the map. The static environment path is increasingly optimized along with generations. Hence, an extra setup cost is not required like other evolutionary approaches. The finer hierarchy makes the robot easily escape from the moving obstacle, almost following the path shown by the coarser hierarchy. This hierarchy extrapolates the movements of the various objects by assuming them to be moving with same speed and direction. Experimentation was done in a variety of scenarios with static and mobile obstacles. In all cases the robot could optimally reach the goal. Further, the robot was able to escape from the sudden occurrence of obstacles.     

An experimental and theoretical understanding of a UV photodetector based on Ag nanoparticles decorated Er-doped TiO2 thin film

Glancing angle deposition (GLAD) was employed to synthesise plasmonic Silver (Ag) nanoparticles (NPs) on the chemically prepared Erbium-doped Titanium dioxide (Er:TiO₂) thin films (TFs). The impact of using Ag NPs on the morphological, optical, and electrical aspects of Er:TiO₂ TFs were sequentially analysed. From the field emission scanning electron microscopy (FESEM) image, the Ag NPs appeared spherical and uniformly distributed on the Er:TiO₂ TFs. The size (diameter) of the maximum number of Ag NPs was ~15 nm (calculated from FESEM image). Energy dispersive X-ray (EDX) spectra assured the presence of Ag NPs on the TFs. X-ray diffraction (XRD) pattern for Ag NPs decorated Er:TiO₂ TFs closely resembled the face centred cubic crystal structure of Ag NPs and body centred tetragonal Ag–O compound. The optical spectroscopy (UV–visible diffuse reflectance and photoluminescence) elucidated that the absorption of light was significantly enhanced in the UV–visible spectral range for the TFs in which Ag NPs were sandwiched between Er:TiO₂ TF layers (Er:TiO₂/Ag NPs/Er:TiO₂). The Schottky contact-based Au/Er:TiO₂/Si photodetector (PD) and Au/Er:TiO₂/Ag NPs/Er:TiO₂/Si (plasmonic) PD were constructed. The plasmonic PD offered a better photo-responsivity of ~4.5 fold higher as compared to Er:TiO₂ TF-based PD upon 380 nm illumination under ?6 V bias. An increase in detectivity and a decrease in noise equivalent power was observed for the plasmonic device compared to Er:TiO₂ device in the UV region. A theoretical approach had been adopted to calculate the wavelength-dependent responsivity for both devices. Further, the important parameters like photoconductive gain, electron transit time and electron mobility were calculated by simulating the experimental responsivity curves of the devices. These parameters exhibited improvement in the UV regime for the plasmonic PD. The fast temporal response with short rise and decay time proves the excellent efficiency of the plasmonic UV PD.     

Phishing website detection using support vector machines and nature-inspired optimization algorithms

Telecommunication Systems - Phishing websites are amongst the biggest threats Internet users face today, and existing methods like blacklisting, using SSL certificates, etc. often fail to keep up...     

Growth of oriented Ag nanocrystals on air-oxidized Si surfaces: An in-situ reflection high energy electron diffraction study

Growth of Ag nanoislands on air-oxidized Si(001), (111) and (110) surfaces has been investigated by reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and cross-sectional transmission electron microscopy. We have shown that the oriented nanocrystalline Ag, similar to the epitaxial growth of Ag on clean Si surfaces, can be grown on oxide-covered Si surfaces. A thin oxide layer (~ 2-3 nm thick) is formed on ultra-high vacuum (UHV)-cleaned Si surfaces via exposure of the clean reconstructed surface to air. Deposition of Ag was carried out under UHV at different substrate temperatures and monitored by RHEED. RHEED results reveal that Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while, in spite of the presence of the oxide layer between Ag islands and Si, preferred orientations with an epitaxial relationship with the substrate evolve when Ag is deposited at higher substrate temperatures. STM images of the oxidized surfaces, prior to Ag deposition, apparently do not show any order. However, Fourier transforms of STM images show the presence of a short range order on the oxidized surface following the unit cells of the underlying reconstructed Si surface. It is intriguing that Ag nanoislands follow an epitaxial orientational relationship with the substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently, the short range order existing on the oxide surface influences the orientation of the Ag nanoislands.     

Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS2

Two distinct stacking orders in ReS₂ are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one-unit cell displacement along the a axis. First-principles calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm⁻¹ for AA stacking, and 20 cm⁻¹ for AB stacking, making a simple tool for determining the stacking orders in ReS₂. Polarized photoluminescence (PL) reveals that AB stacking possesses blueshifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump–probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. The findings underscore the stacking-order driven optical properties and carrier dynamics of ReS₂, mediate many seemingly contradictory results in the literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.     

Precursor dependent tailoring of morphology and bandgap of zinc oxide nanostructures

Zinc oxide (ZnO) nanoparticles have been synthesized by wet chemical processing from four different zinc precursor materials at room temperature. Synthesis of phase pure material with four different morphologies and orientations have been confirmed through different characterization techniques like, X-ray diffraction, field emission SEM, fourier transformed IR etc. The band gap energies of the synthesized materials were within specific semiconductor limits and the same have been determined from UV–Visible and photoluminescence spectra of the synthesized nanostructured ZnO materials. Thus it is possible to control ZnO nanostructures and morphologies through facile room temperature synthesis and tailor their band gaps for different application purposes.     

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution‐Phase Deposition

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large‐area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution‐based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum‐based synthesis because it is relatively simple and easy to scale up for high‐throughput production. In addition, solution‐based thin films open new opportunities that cannot be achieved from vacuum‐based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution‐based synthesis of 2D metal chalcogenides are discussed.     

Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior

Integration of semiconductor epitaxical nanostructures and nanocrystals into two classes of quantum structures, uncovered adsorbed nanocrystals or buried via epitaxical overgrowth, is successfully demonstrated through structural and optical studies. The combination InGaAs/GaAs epitaxical structures and InAs nanocrystals is employed as a vehicle with the functional aim of exploiting the well developed optoelectronic communication technology based on the former with the biochemical and biomedical applications for which the latter are well suited.