Sub-50-nm physical gate length CMOS technology and beyond usingsteep halo

Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with T_ox^inv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions     

Deep submicrometer super self-aligned Si bipolar technology with25.4 ps ECL

A new deep submicron double-poly self-aligned Si bipolar technology has been developed using a 0.3-μm design rule, a collector polysilicon trench electrode, and oxide-filled trench isolation. This technology is called “High-Performance Super Self-Aligned Process Technology” or HSST. 0.3-μm minimum patterning is achieved by electron-beam direct writing technology. The HSST bipolar transistor is 2.5 times smaller than the previous 1-μm SST-1B. Owing to its horizontal reduction and an f_T of 22.3 GHz at V_ce=1 V, the ECL gate attains 25.4 ps/G at 1.58 mA, which is a 30% improvement on the SST-1B. By including parasitic capacitances of the base polyelectrode and polyresistors, the ECL delay time is accurately simulated for low-power operation. It is shown that the HSST is a very promising technology for the development of future high-speed communication systems     

Narrow spectral linewidth characteristics of monolithic integrated-passive-cavity InGaAsP/InP semiconductor lasers

The spectral linewidth of 1.3 ?m monolithic integrated-passive-cavity (IPC) semiconductor laser is measured by a delayed self-heterodyne technique. It is found that the line-width is narrowed when longitudinal submode is suppressed. The narrowest linewidth obtained so far is 900 kHz at 6 mW output power.     

The oxidation properties of fourth generation single-crystal nickel-based superalloys

The fourth-generation nickel-based single-crystal superalloys, which contain large amounts of refractory metals for strengthening and platinum group metals for topologically close-packed phase prevention, show excellent high-temperature strength. However, these alloying elements seem to decrease high-temperature oxidation resistance. In this study, nickel-based superalloys with various amounts of tantalum, rhenium, and ruthenium were examined in isothermal and cyclic exposures at 1,100°C to investigate the effect on the oxide growth rate and resistance to scale spallation. Ruthenium and rhenium were found to degrade the oxidation resistance by the vaporization of their oxide. Tantalum-rich oxide in the spinel layer acts to stabilize ruthenium and rhenium oxide in the scale. The addition of hafnium and yttrium is effective in improving the oxidation resistance of ruthenium-containing nickel-based superalloys.     

Influence of third monomer on the crystal phase transition behavior of ethylene-tetrafluoroethylene copolymer

Crystal phase transition between the low- and high-temperature phases has been investigated for ethylene (E)-tetrafluoroethylene (TFE) alternating copolymer (ETFE) containing the third monomeric species by the temperature dependent measurements of wide-angle X-ray diffraction (WAXD) and small-angle X-ray scattering (SAXS) and differential scanning calorimetry. Nonafluoro-1-hexene (NFH) and hexafluoropropylene (HFP) were chosen as the third monomers, where they are different in the side-branch length, -(CF₂)₃CF₃ and -CF₃, respectively. In the case of E/TFE/NFH copolymer (ET-C4F9), the crystal phase transition temperature of the original ETFE two-components copolymer was not very much affected by the existence of NFH in the range of NFH content from 0.7 to 3 mol%. Contrarily, the crystal phase transition temperature of E/TFE/HFP copolymer (ET-CF3) was found to decrease drastically with increasing HFP content. The melting temperature and the higher-order structure were also affected sensitively depending on the HFP content. This difference in phase transition behavior between ET-C4F9 and ET-CF3 copolymers is reasonably interpreted as follows: the short side groups (-CF₃) of HFP monomeric unit are included in the crystal lattice of E/TFE chains and the unit cell is expanded gradually with an increment of the HFP content, resulting in the decrease in phase transition point because of easier thermal motion of the chains. On the other hand, the long side groups [-(CF₂)₃CF₃] of NFH monomeric units are excluded out of the crystal lattice and located on the lamellar surfaces or in the amorphous region and do not affect very much the phase transition temperature even when the NFH content is increased. In association with such a change in crystal structure, the long period of stacked lamellar structure was found to decrease remarkably in the case of NFH, whereas it does not change very much for HFP, consistent with the interpretation of the above-mentioned WAXD data.     

Using a GPU to Accelerate Die and Mold Fabrication

The authors present a GPU-based method for generating and verifying cutter paths for numerically controlled milling. A CAM system based on this technology is now employed in production at Mazda Motor Corporation for manufacturing stamping dies. This system can compute cutter paths more than 20 times faster than previous methods     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

FDTD analysis of switching characteristics in magnetooptic functional devices using magnetostatic surface waves

Collinear magnetooptic interaction with magnetostatic surface waves (MSSW) can be used for wavelength‐selective switches, wavelength filters, and frequency shifters in wavelength‐division‐multiplexed (WDM) photonic networks and optical processing systems. The switching efficiency can be improved with a multilayer waveguide structure. To investigate the dynamic switching characteristics, the FDTD method was employed. The mode conversion between TE and TM mode was successfully demonstrated with FDTD simulation. The filtering characteristics were also evaluated. The FDTD results were compared with the result from the coupled mode theory, and good agreement was obtained. Switching of an optical pulse was also demonstrated by the FDTD method. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 162(1): 40–47, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20501     

Ideal crosslinked-polymers and their characterization in free-radical monovinyl-divinyl copolymerizations

The critical conditions in which the classical Flory-Stockmayer gelation theory (F-S theory) is applicable to monovinyl-divinyl copolymerizations were pursued in detail. The resulting prepolymers or precursors of ideal crosslinked-polymers were characterized as standard polymers for the discussion of network formation in free-radical monovinyl-divinyl copolymerizations. Methyl methacrylate was copolymerized with a small amount of ethylene dimethacrylate, butylene dimethacrylate or nonapropyleneglycol dimethacrylate in the presence of lauryl mercaptan, a chain transfer agent to reduce the occurrence of a thermodynamic excluded volume effect and intramolecular crosslinking as the primary and secondary factors, respectively, for the greatly delayed gelation in the free-radical monovinyl-divinyl copolymerizations and, moreover, to keep the primary chain length constant by inhibiting a gel effect. The ratio of the actual gel point to the theoretical one reached 1.1, supporting the validity of F-S theory. The resulting prepolymers were subjected to SEC-MALLS analysis to determine the molecular weights, the molecular-weight distributions and the radii of gyration; the correlations of molecular weight vs. elution volume and radius of gyration vs. molecular weight were useful for the characterization of the precursors of ideal network-polymers.