Potential of pulsed electric field to control Aspergillus parasiticus,aflatoxin and mutagenicity levels: Sesame seed quality

Seed processing technologies are essential for seed safety and functionality through protection of physicochemical quality, pathogen inactivation, aflatoxin detoxification and alleviation of mutagenicity. Design of a pilot-scale unit of pulsed electric fields (PEF) to treat sesame seeds with respect to quality parameters, Aspergillus parasiticus inactivation and aflatoxin reduction as well as alleviation of aflatoxin mutagenicity were prompted in this study. PEF energy ranged from 0.97 to 17.28 J achieved maximum reductions of peroxide value and acidity number of 67.4 and 85.7%, respectively, and did not change color L*, a*, b* and hue values. A 60% reduction of A. parasiticus counts occurred at the maximum PEF energy. Aflatoxins G1, G2, B1, and B2 contents decreased by 94.7, 92.7, 86.9, and 98.7%, respectively. Except for the samples treated by 2.16 J with 100 μg/plate and by 6.80 J with 10 μg/plate, PEF treatment provided elimination of aflatoxin mutagenity. It is concluded that PEF treatment can be used to treat sesame seeds with preservation of physicochemical properties, inactivation of A. parasiticus and decomposition of aflatoxins with reduced mutagenicity.     

A generalization of the octonion Fourier transform to 3-D octonion-valued signals: properties and possible applications to 3-D LTI partial differential systems

Multidimensional Systems and Signal Processing - The paper is devoted to the development of the octonion Fourier transform (OFT) theory initiated in 2011 in articles by Hahn and Snopek. It is also...     

Chemotherapy response of pancreatic cancer by diffusion-weighted imaging (DWI) and intravoxel incoherent motion DWI (IVIM-DWI) in an orthotopic mouse model

Magnetic Resonance Materials in Physics, Biology and Medicine - To investigate the value of using diffusion-weighted imaging (DWI) and intravoxel incoherent motion DWI (IVIM-DWI) to assess the...     

Multilevel Recording in Ge2Sb2Te5 Thin Films

Semiconductors - The current–voltage characteristics measured on Ge2Sb2Te5 thin films in the current mode are studied. The effect of multilevel recording is established when applying...     

Analysis of a two-dimensional symmetric problem on extension of an Al-polyimide-Cu layered structure with a model crack

To increase the efficiency of designing systems intended for monitoring surface cracks in aluminum structures during their working life, we have analyzed a two-dimensional symmetric problem on uniaxial extension of an Al-polyimide-Cu layered structure with ideal adhesion between layers and a model crack in the aluminum base. The problem has been first solved for a sample with the crack modeled by a zero-thickness notch using the ANSYS engineering simulation program package. It is shown that this setting of the problem can lead to inadequate results as manifested, in particular, by significantly overstated mechanical stresses in aluminum in the region of crack emergence on the surface. In order to eliminate this difficulty, we propose to use the structure with a model defect in the form of a notch of nonzero thickness in the initial unstressed state of the structure. Recommendations for selecting the thickness of a notch used in the model structure are given.