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911.
Ultra-wideband (UWB) microwave imaging has recently been proposed for detecting small malignant breast tumors. In this article, we review the current research status of this approach. First, we introduce the concept of microwave imaging via space-time (MIST) beamforming and related signal-processing algorithms. The objective of these signal-processing techniques is to form a spatial image of scattered microwave energy, and to identify the presence and location of malignant lesions from their scattering signatures. Next, we present numerical studies based on finite-difference time-domain simulations to demonstrate the efficacy of MIST beamforming for detecting small malignant breast lesions in both prone and supine configurations. Finally, the experimental feasibility of UWB microwave imaging is demonstrated using an initial imaging prototype and multilayered breast phantoms.  相似文献   
912.
The film-forming capacity of binary systems containing Sb2O3, SnO2, CeO2, Y2O3, Nd2O3, Bi2O3, V2O5, ZnO, CuO, CdO, and Al2O3 are investigated. The best film-formers are Sb2O3 and SnO2, whereas ZnO, CuO, CdO, and Al2O3 cannot produce films of optical quality. The rest of considered oxides do not impair the clarity of coatings when their molding content is 20 – 50%. A proportional dependence is established between the refractive index and the reflection coefficient of a film and the refractive indexes of oxides making parts of this film, as well as between the concentration of deposited FFS, the film-forming capacity of oxides, and the film thickness.  相似文献   
913.
In this article, we presented our passive-based biped Denise. Using only two foot contact switches as sensors and simple on/off pneumatic muscle action, it walks at 0.4 m/s and can handle floor disturbances up to 6 mm (leg length is 0.7 m). Its simplicity, efficiency, and die natural look of its motions make it a promising lead for the development of commercially viable humanoid robots. The aim of this article is to provide other researchers enough details so that they can reproduce the work or use it as a basis for future research.  相似文献   
914.
In this article, we present a review of observations during Al-3.5 wt pct Ni alloy solidi.cation experiments performed at the European Synchrotron Radiation Facility (ESRF) in Grenoble. These experiments provide direct access to dynamical phenomena during columnar growth (initial transient and breakdown of a planar solid-liquid interface), and for the first time to the transition from columnar-to-equiaxed microstructure (nucleation ahead of a columnar front and blocking of a columnar front by an equiaxed microstructure) and fully equiaxed growth (propagation of an effective front). Based on these experimental observations, critical parameters such as columnar growth velocity variation during the transition or equiaxed-grain diameter are measured and discussed. This article is based on a presentation made in the symposium entitled “Solidi.cation Modeling and Microstructure Formation: In Honor of Prof. John Hunt,” which occurred March 13–15, 2006, during the TMS Spring Meeting in San Antonio, Texas, under the auspices of the TMS Materials Processing and Manufacturing Division, Solidification Committee.  相似文献   
915.
Consideration was given to the characteristic polynomials with special affine uncertainty. For this family, the stability domain in the parameter space was shown to be a union of polyhedra. For continuous-time and discrete-time systems, a simple method was proposed to single out the stability domain and determine the stability radius for different norms of uncertainty. Efficiency of this method was corroborated by examples.  相似文献   
916.
The structures, chemical states of elements, and catalytic activities of Ni-Mo-B alloys with different molybdenum contents, which were obtained by catalytic electroless reduction of metal ions, were studied. The rates of the partial reactions (heterogeneous hydrolysis of dimethylamine borane, reduction of nickel ions, and evolution of molecular hydrogen) were found to make a bell-shaped curve when plotted versus the concentration of molybdate ions in solution. Original Russian Text ? V.M. Krutskikh, M.V. Ivanov, A.B. Drovosekov, E.N. Lubnin, B.F. Lyakhov, Yu.M. Polukarov, 2007, published in Zashchita Metallov, 2007, Vol. 43, No. 6, pp. 619–625.  相似文献   
917.
Theoretical treatments forecast that bistable CMOS devices using electronic charge as a state variable will operate at their maximum thermal dissipation limit possibly as early as 2012. The problem is further compounded by increasing manufacturing challenges associated with the ever decreasing logic switch dimensions. These challenges require the development of new fabrication strategies that replace or complement current top-down lithography with bottom-up protocols using controlled self-assembly of nanomaterial building blocks. To answer some of these issues, this paper focuses on a new device paradigm consisting of an arene-metal-arene conformational switch, addressable through capacitive, inductive, or resonant-tunneling field coupling. The operating principle is based on voltage-tunable modulation in quantum electron transmission. The switch is open (off) when the metal ion is displaced to a position at a C-H bond on the arene ring due to an externally applied bias. Conversely, when the external bias is removed, the metal ion moves to an axis- symmetric position on the arene ring, and the switch is closed (on). The paper presents a summary of the architecture, operating principle, and advantages of the conformational switch, along with associated findings from proof-of-concept theoretical and experimental studies of its target specifications and performance. The paper also discusses opportunities and challenges related to the integration of conformational switches into hybrid CMOS-molecular and monolithic (all molecular) circuits.  相似文献   
918.
Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2- thienylethoxycarbonyl)-propyl)-{5}-l-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 x 10-2 cm2/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The ON/OFF ratios reported in this letter, which are in the range of 105 -106, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP.  相似文献   
919.
The influence of chemical composition on the microstructure of the γ-titanium aluminide alloy Ti-48Al-2W-0.5Si (at. pct) and the accompanying tensile, low-cycle fatigue, and creep properties has been evaluated. The study showed that small variations in chemical composition and casting procedures resulted in considerable variations in the microstructure, yielding vastly different mechanical properties. Low contents of aluminum and tungsten led to a coarse-grained lamellar (γ/α 2) microstructure with high creep resistance. A composition close to the nominal one produced a duplex (γ+γ/α 2) structure with favorable strength, ductility, and low-cycle fatigue properties. By controlling the solidification and cooling rates at casting, a pseudoduplex (PS-DP) microstructure with a unique combination of high strength and high fatigue and creep resistance can be obtained. These unique properties can be explained by the diffuse boundaries between the relatively small γ grains and the neighboring lamellar colonies, combined with semicoherent interfaces between the γ and α 2 phases. At tensile and low-cycle fatigue loading, these boundaries act like high-angle boundaries, producing a virtually fine-grained material promoting strength, whereas at creep loading, grain-boundary sliding is hindered in the semicoherent interfaces leading to high creep resistance.  相似文献   
920.
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