聚合物冷拉过程的流函数分析

用流函数法分析了聚合物拉伸成形时，颈缩的发生和扩展过程，文中论证了采用流函数法的优越性和适用性，并将流函数法计算结果和有限元法计算结果作了对比。     

单齿泵削角的优化设计

给出了单齿泵削角的优化模型与计算实例，并对理论设计与实验进行了比较分析。     

专家系统应用于锅炉分气缸的设计和选型

基于专家系统的基本理论 ,根据锅炉分气缸设计、选型的特点和现场的实际条件 ,开发了锅炉分气缸设计、选型专家系统。该系统采用VisualC ++语言编程 ,模块结构 ,图形化用户界面等     

微机模拟处理pH络合滴定法研究——Ⅱ.终点确定方法和最佳实验条件模拟估计程序

本文利用简便的滴定过程模型,确立了微机模拟处理实验数据,方便、准确地求解络合滴定等当点的方法。设计了最佳实验条件模拟估计程序。该法测定Zn~(2+),Pb~(2+),Cu~(2+),Fe~(3+)结果的相对误差Δ<1％。pH=6-7时,测定Ca~(2+)的相对误差为-1.61％;σ<0.001mmol,(N=5)。     

预测控制算法的统一格式及其在电加热炉的应用

本文根据常用的两类预测控制算法推出一种新型预测控制算法。并将其应用于一双输入/双输出的力学持久机电加热炉的温度控制系统上,获得了满意的结果:控温精度为±1.5℃/300℃,且适用于非最小相位系统。     

利用增量矩阵辨识确定型ARMA模型的新算法

本文提出了一种无偏辨识确定型ARMA模型参数及阶次的新方法。和其他辨识算法不同的是在这里我们构造了关于系统开环阶跃响应的增量矩阵,并且通过分析该增量矩阵子矩阵的代数性质而得到了辨识系统阶次的一种简单方法。仿真的结果说明了本文理论的正确性。     

Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates

The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.