水冷式微波偶极子辐射器在生物介质中的SAR分布计算

本文从电磁场理论模型出发，分析地腔内水冷式微波偶极子辐射器在生物介质中的近场辐射特性，计算得到有水冷时的比吸收率（ＳＡＲ）分布形态。与无水冷时的ＳＡＲ分布比较表明，水冷可改善热区分布，增加治疗深度。该结果与工程经验和临床实际基本相符。     

Base station location in a cellular CDMA system

We consider a cellular CDMA system in which blocking is enforced when the relative interference exceeds a certain threshold level. This paper addresses a radio network design problem in such a CDMA system. Given the data of call‐traffic distributed over the service area and potential sites of base stations, the objective of the problem is to locate base stations so as to minimize the associated cost for establishing base stations while keeping the probability of blocking under control. We develop an efficient algorithm for solving the design problem. Computational experiments with real‐world data are conducted to show both the efficiency and the practicality of the proposed design method. This revised version was published online in August 2006 with corrections to the Cover Date.     

黎河河道演变的数学模型——天然河道用作输水通道后的演变

天然条件下的山前性河流黎河被用作引滦入津的输水河道，来水条件的巨变和大量工程引起的河床调整，为研究这一调整我们建立了具有如下特点的数学模型：1、考虑了自上而下床沙粒径的巨大变化；2、反映了卵石夹沙河床宽级配的输沙特点以及清水冲刷时的粗化过程；3、模拟了粘性土河床的冲刷特性；4、考虑了跌水坎的不规则断面宽顶堰的过流特点以及有工程措施和人为干扰下的河床演变特点。本文介绍了上述数学模型的主要内容，这对于其它跨流域引水工程和河道治理工程有参考价值。     

颗粒与高频感应热等离子体流相互作用的数值研究

通过颗粒对等离子体反影响的研究，可以有效控制颗粒在等离子体中的运动轨迹及其在高温区的停留时间，达到对颗粒有效加工的目的。本文通过对高频感应热等离子体流温度场与速度场和颗粒运动轨迹与加热过程进行选代计算，给出了颗粒加热与加速对高频感应热等离子体流反影响的一些数值模拟结果     

Salt‐Assisted Synthesis of 2D Materials

2D materials have demonstrated good chemical, optical, electrical, and magnetic characteristics, and offer great potential in numerous applications. Corresponding synthesis technologies of 2D materials that are high‐quality, high‐yield, low‐cost, and time‐saving are highly desired. Salt‐assisted methods are emerging technologies that can meet these requirements for the fabrication of 2D materials. Herein, the recent process for the salt‐assisted synthesis of 2D materials and their typical applications are summarized. First, the properties of salt crystals and molten salts are briefly introduced, and then some examples of 2D materials synthesis with the assistance of salt as well as their representative applications are presented. The underlying mechanisms of salts with different states on the formation of 2D morphology are discussed to aid in the rational design of synthetic route of 2D materials. At last, the challenges and future perspectives for salt‐assisted methods are briefly described. This review provides guidance for the controllable synthesis of 2D materials based on the salt‐assisted approaches.     

A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

Traditional silicon solar cells extract holes and achieve interface passivation with the use of a boron dopant and dielectric thin films such as silicon oxide or hydrogenated amorphous silicon. Without these two key components, few technologies have realized power conversion efficiencies above 20%. Here, a carbon nanotube ink is spin coated directly onto a silicon wafer to serve simultaneously as a hole extraction layer, but also to passivate interfacial defects. This enables a low‐cost fabrication process that is absent of vacuum equipment and high‐temperatures. Power conversion efficiencies of 21.4% on an device area of 4.8 cm² and 20% on an industrial size (245.71 cm²) wafer are obtained. Additionally, the high quality of this passivated carrier selective contact affords a fill factor of 82%, which is a record for silicon solar cells with dopant‐free contacts. The combination of low‐dimensional materials with an organic passivation is a new strategy to high performance photovoltaics.     

Conductive MXene Nanocomposite Organohydrogel for Flexible,Healable, Low‐Temperature Tolerant Strain Sensors

Conductive hydrogels are attracting tremendous interest in the field of flexible and wearable soft strain sensors because of their great potential in electronic skins, and personalized healthcare monitoring. However, conventional conductive hydrogels using pure water as the dispersion medium will inevitably freeze at subzero temperatures, resulting in the diminishment of their conductivity and mechanical properties; meanwhile, even at room temperature, such hydrogels suffer from the inevitable loss of water due to evaporation, which leads to a poor shelf‐life. Herein, an antifreezing, self‐healing, and conductive MXene nanocomposite organohydrogel (MNOH) is developed by immersing MXene nanocomposite hydrogel (MNH) in ethylene glycol (EG) solution to replace a portion of the water molecules. The MNH is prepared from the incorporation of the conductive MXene nanosheet networks into hydrogel polymer networks. The as‐prepared MNOH exhibits an outstanding antifreezing property (?40 °C), long‐lasting moisture retention (8 d), excellent self‐healing capability, and superior mechanical properties. Furthermore, this MNOH can be assembled as a wearable strain sensor to detect human biologic activities with a relatively broad strain range (up to 350% strain) and a high gauge factor of 44.85 under extremely low temperatures. This work paves the way for potential applications in electronic skins, human?machine interactions, and personalized healthcare monitoring.     

LTE外辐射源雷达帧间模糊带分析与抑制

LTE (Long Term Evolution)信号具有大带宽、高覆盖率、强通用性等优点,是一种新型的外辐射源雷达机会照射源。该文从FDD-LTE (Frequency Division Duplexing Long Term Evolution)信号结构入手,探讨了该信号作为第三方机会照射源的模糊函数特性;根据实测FDD-LTE信号,阐述了模糊函数中帧间模糊带抑制的必要性,并对该帧间模糊带的形成机理进行了详细的分析,分析结果表明LTE信号结构中的确定性特征既是引起模糊带的主要因素,同时也是信号相干积累的主要能量来源。对此,该文提出了基于OFDM (Orthogonal Frequency Division Multiplexing)符号子载波系数归一化的帧间模糊带抑制方法,该方法能够在抑制帧间模糊带的同时,又不影响信号相干积累进行目标探测。仿真和实测结果验证了该抑制方法的有效性,为LTE外辐射源雷达目标探测奠定了基础。      

Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET

This paper compares the gate-induced drain leakage (GIDL) in fully-depleted (FD) silicon-on-insulator (SOI) tunneling field effect transistor (TFET) and in standard metal-oxide-semiconductor FET (MOSFET) fabricated in the same process. The measurements show that the MOSFET GIDL current is lower than the GIDL in a TFET with the same junction doping, especially for devices with thick gate oxide and under low drain bias. A model describing lateral band-to-band tunneling (BTBT) is developed for GIDL in the FD-SOI TFET. By combining the model of gate-controllable tunneling diode in series with a field effect diode, we achieve an accurate picture of GIDL in FD-SOI MOSFETs.     

Influence of transient flow and solder bump resistance on underfill process

The underfill flow process is one of the important steps in Microsystems technology. One of the best known examples of such a process is with the flip-chip packaging technology which has great impact on the reliability of electronic devices. For optimization of the design and process parameters or real-time feedback control, it is necessary to have a dynamic model of the process that is computationally efficient yet reasonably accurate. The development of such a model involves identifying any factors that can be neglected with negligible loss of accuracy. In this paper, we present a study of flow transient behavior and flow resistance due to the presence of an array of solder bumps in the gap. We conclude (1) that the assumption of steady flow in the modeling of the flow behavior of fluids in the flip-chip packaging technology is reasonable, and (2) the solder bump resistance to the flow can not be neglected when the clearance between any two solder bumps is less than 60-70 μm. We subsequently present a new model, which extends the one proposed by Han and Wang in 1997 by considering the solder bump resistance to the flow.