CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

标准椅全身计数器对不同年龄组均匀体模源全能峰效率的刻度

本文介绍了用标准液体源均匀充入聚氯乙烯制的体模,刻度标准椅全身计数器〔φ8″×4″(NaI)〕的方法和结果。分别就代表6个年龄组的体模,测定了标准椅全身计数器对5种能量(364,637,898,1460和1836keV)γ射线的全能峰效率;给出了全能峰效率与γ射线能量和被测对象体重的关系曲线。     

Correction factors for water-proofing sleeves in kilovoltage x-ray beams

This paper investigates the effect of the waterproofing sleeve on the calibration of kilovoltage photon beams (50-300 kV). The sleeve effect correction factor, ps has been calculated using the Monte Carlo method as the ratios of the air kerma in an air cavity of a cylindrical chamber without the waterproofing sleeve to that with a sleeve. Three sleeve materials have been studied, PMMA, nylon and polystyrene. The calculations were carried out using the EGS4 (Electron Gamma Shower version 4) code system with the application of a correlated-sampling variance-reduction technique. The results show that the sleeve correction factor for 1-mm thick nylon and polystyrene sleeves, ps varies from 0.992 to 1.000 and from 0.981 to 1.000, respectively, for the same beam quality range. The ps factor varies with sleeve thickness, beam quality and phantom depth. No significant dependence of the ps factor on field size and source-surface distance has been found. Measurements for PMMA, nylon and polystyrene sleeves of various thicknesses have also been carried out and show excellent agreement with Monte Carlo calculations.     

基于OTA的多功能电压模滤波器及其仿真

本文采用信号流图法设计了一种基于ＯＴＡ的三输入一输出多功能电压模滤波器新电路，该电路由五个ＯＴＡ和两个接地电容构成，合理选择输入电压可实现低通、高通、带通、带阻及全通滤波功能。文章还对电路进行了ＭＯＳ管级的计算机仿真，其结果表明所提出的电路方案正确有效。     

Multiresolution analysis in extraction of reference lines fromdocuments with gray level background

Based on wavelets, a theoretical method has been developed to process multi-gray level documents. In this method, two-dimensional multiresolution analysis, a wavelet decomposition algorithm, and compactly supported orthonormal wavelets are used to transform a document image into sub-images. According to these sub-images, the reference lines of a multi-gray level document can be extracted, and knowledge about the geometric structure of the document can be acquired. Particularly, this approach is more efficient to process form documents with gray level background. Experiments indicate that this new method can be applied to process documents with promising results     

降低彩板生产稀释剂消耗的方法探讨

结合彩涂板生产实际，介绍了几种降低稀释剂消耗的方法。     

整体成型钼园舟研究

本研究采用特殊的方法制取钼园舟，研究结果表明，获得了满意的结果。     

薄相屏闪烁的数值分析

本文在弱闪烁条件下，利用广泛适用于星际闪烁、行星际闪烁和电离层闪烁的薄相屏理论，以行星际闪烁为算例，对薄相屏闪烁进行了数值分析。结果表明：垂直于介质运动方向上的不规则结构的大小对闪烁有着重要的影响，直接表现在频谱的变化趋势和振荡幅度的不同。尤其是当小于Ｆｒｅｓｎｅｌ尺度时，数值计算表明此时没有闪烁发生。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate