Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

Tunneling Conductance Dependence of the Tunneling Spectra in Bi2Sr2CaCu2O8

We have measured the tunneling spectra in Bi₂Sr₂CaCu₂O₈ with a scanning tunneling microscope(STM) at various tip-sample distances by changing the tunneling conductance in a controlled manner. When the tunneling conductance is increased from 1×10^–9 to 1×10^–5 S, the spectra do not show changes in particular. However, the gap value decreases steeply and the asymmetric back ground density of states turns inverted V-shaped one above 6×10^–4 S. The changes in the tunneling spectra at the high tunneling conductances are explained by the enhancement of the local carrier density induced by the pressure that the STM tip applied to the sample.     

Consideration of Femtosecond Radiation Generation on NewSUBARU Storage Ring

We studied on realization of short pulse gamma ray and X-ray simultaneously induced by a femtosecond laser on NewSUBARU storage ring. Based on the fact that the transverse dimensions of electron beam are much shorter than the longitudinal one, the laser light is arranged to collide the electron beam at a right angle to generate femtosecond pulse gamma ray, furthermore, the modulated part of the electron bunch gives rise to short pulse X-ray by synchrotron radiation from a downstream bending magnet. The temporal characteristic of the radiation is analyzed in this paper, as well as the performances are estimated.     

On-demand learning for a wireless campus

The current Internet and wireless networks are harsh environments for transporting high-bandwidth multimedia data. We examine the technical issues involved, and describe an end-to-end solution to support a Web-based learn-on-demand system that operates in a wireless campus environment.     

Practical OSPF traffic engineering

Open Shortest Path First (OSPF) traffic engineering (TE) is intended to bring long-awaited traffic management capabilities into IP networks, which still rely on today's prevailing routing protocols: OSPF or IS-IS. In OSPF, traffic is forwarded along, and split equally between, equal cost shortest paths. In this letter, we formulate the basic requirements placed on a practical TE architecture built on top of OSPF and present a theoretical framework meeting these requirements of practicality. The main contribution of our work comes from the recognition that coupled with an instance of the maximum throughput problem there exists a related inverse shortest-path problem yielding optimal OSPF link weights.