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31.
A technique is presented that allows for altering of the physical characteristics of films of TiO2 nanoparticles by exposure to visible light. In this technique, dye‐sensitized oxide nanoparticles are deposited on a substrate by dip‐coating. Photodissociation of the organic ligand layer leads to cross‐linking of the nanoparticles. Consequently, irradiated films have a decreased porosity, an increased index of refraction and an increased hydrophobicity. Films irradiated with green light are compared to films irradiated with UV light. Within experimental error, visible‐ and UV‐illumination induces the same changes in the films. The mechanism of surfactant elimination in dye‐sensitized oxide particles is discussed, patterning is demonstrated, and prospective applications of the technique are considered.  相似文献   
32.
This work discusses the experimental set-up and data interpretation for high temperature and current stress tests of flip chip solder joints using the four-point Kelvin measurement technique. The single solder joint resistance responses are measured at four different four-point Kelvin structure locations in a flip chip package. Various temperatures (i.e., 125–165 °C) and electric current (i.e., 0.6–1.0 A) test conditions are applied to investigate the solder joint resistance degradation behavior and its failure processes. Failure criterion of 20% and 50% joint resistance increases, corresponding to solder and interfacial voiding, are employed to evaluate the solder joint electromigration reliability. The absolute resistance value is substantially affected by the geometrical layout of the metal lines in the four-point Kelvin structure, and this is confirmed by finite element simulation.Different current flow directions and strengths yielded different joint resistance responses. The anode joint, where electrons flow from the die to the substrate, usually measured an earlier resistance increase than the cathode joint, where electrons flow in the opposite direction. The change in measured joint resistances can be related to solder and interfacial voiding in the solder joint except for ±1 A current load, where resistance drop mainly attributed to the broken substrate Cu metallization as a result of “hot-spot” phenomenon. The solder joint temperature increases above the oven ambient temperature by ~25 °C, ~40 °C and ~65 °C for 0.6 A, 0.8 A and 1.0 A stress current, respectively. It is found that two-parameter log-normal distribution gives a better lifetime data fitting than the two-parameter Weibull distribution. Regardless of failure criterion used, the anode joint test cells usually calculated a shorter solder joint mean life with a lower standard variation of 0.3–0.6, as compared to the cathode joint test cells with a higher standard variation of 0.8–1.2. For a typical flip chip solder joint construction, electromigration reliability is mainly determined by the under bump metallization consumption and dissolution, with intermetallic compound formation near the die side of an anode joint.  相似文献   
33.
Silicon nanowires (SiNWs) were grown on Si(1 0 0) and Si(1 1 1) substrates by chemical vapour deposition (CVD) via the vapour–liquid–solid (VLS) mechanism with small gold particles used as seeds. In order to control the diameter of nanowires, their density on the substrate and their orientation we controlled the size and the distribution of Au seed particles. This was accomplished using nanosphere lithography (NSL) by which regular arrays of Au nanoparticles can be generated. This allowed us to grow single-crystalline SiNWs perpendicular to the surface of Si(1 1 1) substrates. The SiNWs and their Au caps were studied with respect to their morphology and composition using TEM, HREM and EFTEM methods. Clusters of Au are observed along the surface of SiNWs and the existence of a thin Si film on gold particles capping the SiNWs is demonstrated.  相似文献   
34.
35.
We compare two source formulations for the electrocardiographic forward problem in consideration of their implications for regularizing the ill-posed inverse problem. The established epicardial potential source model is compared with a bidomain-theory-based transmembrane potential source formulation. The epicardial source approach is extended to the whole heart surface including the endocardial surfaces. We introduce the concept of the numerical null and signal space to draw attention to the problems associated with the nonuniqueness of the inverse solution and show that reconstruction of null-space components is an important issue for physiologically meaningful inverse solutions. Both formulations were tested with simulated data generated with an anisotropic heart model and with clinically measured data of two patients. A linear and a recently proposed quasi-linear inverse algorithm were applied for reconstructions of the epicardial and transmembrane potential, respectively. A direct comparison of both formulations was performed in terms of computed activation times. We found the transmembrane potential-based formulation is a more promising source formulation as stronger regularization by incorporation of biophysical a priori information is permitted.  相似文献   
36.
Anisotropy imaging can be used to image resonance energy transfer between pairs of identical fluorophores and, thus, constitutes a powerful tool for monitoring protein homo-association in living single cells. The requirement for only a single fluorophore significantly simplifies biological preparation and interpretation. We use quantitative methods for the acquisition and image processing of anisotropy data that return the expected error of the anisotropy per pixel based on photon statistics. The analysis methods include calibration procedures and allow for a balance in spatial, anisotropy, and temporal resolution. They are featured here with anisotropy images of fluorescent calibration beads and enhanced green fluorescent protein complexes in live cells.  相似文献   
37.
Fault-tolerant communication and energy efficiency are important requirements for future-generation wireless ad hoc networks, which are increasingly being considered also for critical application domains like embedded systems in automotive and aerospace. Topology control, which enables multi-hop communication between any two network nodes via a suitably constructed overlay network, is the primary target for increasing connectivity and saving energy here. In this paper, we present a fault-tolerant distributed topology control algorithm that constructs and continuously maintains a k-regular and k-node-connected overlay for energy-efficient multi-hop communication. As a by-product, it also builds a hierarchy of clusters that reflects the node density in the network, with guaranteed and localized fault-tolerant communication between any pair of cluster members. The construction algorithm automatically adapts to a dynamically changing environment, is guaranteed to converge, and exhibits good performance as well.  相似文献   
38.
An investigation of the behaviour and energy budget of sturzstroms has been carried out using physical, analytical and numerical modelling techniques. Sturzstroms are rock slides of very large volume and extreme run out, which display intensive fragmentation of blocks of rock due to inter-particle collisions within a collisional flow. Results from centrifugal model experiments provide strong arguments to allow the micro-mechanics and energy budget of sturzstroms to be described quantitatively by a fractal comminution model. A numerical experiment using a distinct element method (DEM) indicates rock mass and boundary conditions, which allow an alternating fragmenting and dilating dispersive regime to evolve and to sustain for long enough to replicate the spreading and run out of sturzstroms without needing to resort to peculiar mechanism. The fragmenting spreading model supported here is able to explain the run out of a fluid-absent granular flow beyond the travel distance predicted by a Coulomb frictional sliding model. This, and its strong relation to internal fragmentation, suggests that a sturzstrom constitutes a landslide category of its own. This study provides a novel framework for the understanding the physics of such sturzstroms.  相似文献   
39.
Electrical interfacing with neural tissue is key to advancing diagnosis and therapies for neurological disorders, as well as providing detailed information about neural signals. A challenge for creating long‐term stable interfaces between electronics and neural tissue is the huge mechanical mismatch between the systems. So far, materials and fabrication processes have restricted the development of soft electrode grids able to combine high performance, long‐term stability, and high electrode density, aspects all essential for neural interfacing. Here, this challenge is addressed by developing a soft, high‐density, stretchable electrode grid based on an inert, high‐performance composite material comprising gold‐coated titanium dioxide nanowires embedded in a silicone matrix. The developed grid can resolve high spatiotemporal neural signals from the surface of the cortex in freely moving rats with stable neural recording quality and preserved electrode signal coherence during 3 months of implantation. Due to its flexible and stretchable nature, it is possible to minimize the size of the craniotomy required for placement, further reducing the level of invasiveness. The material and device technology presented herein have potential for a wide range of emerging biomedical applications.  相似文献   
40.
The solid phase epitaxy (SPE) of undoped amorphous Si (a-Si) deposited on SiO2 patterned Si(001) wafers by reduced pressure chemical vapor deposition (RPCVD) using a H2-Si2H6 gas system was investigated. The SPE was performed by applying in-situ postannealing directly after deposition process. By transmission electron microscopy (TEM) and scanning electron microscopy, we studied the lateral SPE (L-SPE) length on sidewall and mask for various postannealing times, temperatures and a-Si thicknesses. We observed an increase in L-SPE growth for longer postannealing times, temperatures and larger Si thicknesses on mask. TEM defect studies revealed that by SPE crystallized epi-Si exhibits a higher defect density on the mask than at the inside of the mask window. By introducing SiO2-cap on the sample with 180 nm Si thickness following postannealing at 570 °C for 5 h, the crystallization of up to 450 nm epi-Si from a-Si is achieved. We demonstrated the possibility to use this technique for SiGe:C heterojunction bipolar transistor (HBT) base layer stack to crystallize Si-buffer layer to widen the monocrystalline region around the bipolar window and to improve base link resistivity of the HBT.  相似文献   
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