On a Non-linear Electronic Circuit Filtering

The stochastic versions of non-linear dynamic circuits are formalized using non-linear stochastic differential equations. Stochastic differential equations (SDEs) are exploited to analyse dynamical systems in noisy environments. A potential application of the SDEs can be regarded as ‘stochastic processes in electronic circuits’. The noisy sampling mixer, a component of digital wireless communications, is an appealing and standard case from the dynamical systems’ viewpoint. It assumes the structure of a non-linear SDE, and its linearized version becomes time-varying bilinear SDE. This paper derives the filtering equations for the noisy non-linear sampling mixer circuit utilizing the filtering density evolution equation. The filtering model for the stochastic problem of concern here comprises the following: (1) a non-linear SDE describing the noisy sampling mixer and (2) a non-linear noisy observation equation. It is interesting to note that the filtered estimate accounts for observations. On the other hand, the predicted estimate does not account for the observation terms in evolution equations. As a result of this, the filtered estimate confirms the greater accuracy of estimated state trajectory in contrast to the predicted trajectory. The filtering equation of this paper can be further utilized for control of the noisy sampling mixer, where the observations are available.     

Multichannel ECG data compression based on multiscale principal component analysis

In this paper, multiscale principal component analysis (MSPCA) is proposed for multichannel electrocardiogram (MECG) data compression. In wavelet domain, principal components analysis (PCA) of multiscale multivariate matrices of multichannel signals helps reduce dimension and remove redundant information present in signals. The selection of principal components (PCs) is based on average fractional energy contribution of eigenvalue in a data matrix. Multichannel compression is implemented using uniform quantizer and entropy coding of PCA coefficients. The compressed signal quality is evaluated quantitatively using percentage root mean square difference (PRD), and wavelet energy-based diagnostic distortion (WEDD) measures. Using dataset from CSE multilead measurement library, multichannel compression ratio of 5.98:1 is found with PRD value 2.09% and the lowest WEDD value of 4.19%. Based on, gold standard subjective quality measure, the lowest mean opinion score error value of 5.56% is found.     

The Ga−Sb (Gallium-Antimony) system

R. C. Sharma was Visiting Assistant Professor (1984–1986)     

Design and Analysis of MIMO Antenna with High Isolation and Dual Notched Band Characteristics for Wireless Applications

A very compact Superwideband multiple-input–multiple-output antenna with dual notched band characteristics is presented. Superwideband characteristics is obtained by means of radiating patch and high isolation between two input ports are obtained by using T-shaped stub in ground plane. Two rejection bands (wireless interoperability for microwave access (WiMAX)/C-band and wireless local area network) are obtained by etching two elliptical slots on radiating patch. Antenna offers large measured useable bandwidth of 2.60–20.04 GHz. Diversity performance is studied in terms of envelope correlation coefficient, diversity gain and total active reflection coefficient. Antenna also offers desirable radiation pattern, gain and radiation efficiency which makes proposed antenna quite suitable for different wireless applications.

     

Study of thermal equilibration in selenium- and sulphur-doped a-Si:H

The present paper reports the thermal equilibration in selenium- and sulphur-doped hydrogenated amorphous silicon thin films deposited by plasma-enhanced chemical vapour deposition. The conductivity of Se- and S-doped a-Si:H is observed to be very sensitive to the rate at which the samples are cooled following the high temperature anneal. Arrhenius plots of conductivity for various doped films revealed thermal equilibration above the equilibration temperature, T _E, thus accounting for larger activation energies. The barrier energy is lower for a-Si,Se:H than for a-Si,S:H, due to a higher defect density in S-doped films.     

C60 Concentration Influence on MEH-PPV:C60 Bulk Heterojunction-Based Schottky Devices

We have investigated the effect of C60 concentration on the performance of poly[2-methoxy-5-(2′-ethylhexoxy-p-phenylene vinylene] (MEH-PPV):C60 blend-based Schottky barrier-based devices. Incorporation of C60 in MEH-PPV leads to a red shift and the reduction of intensity in MEH-PPV absorption spectra. The appearance of a C60 characteristic band in the Raman spectra of the composites indicates the presence of C60 in the blends. A FESEM study reveals that the addition of C60 significantly modifies the surface morphology of the blend films. However, higher concentrations (>?5 wt.%) results in agglomeration of C60 particles. Dark I–V measurements allow us to extract various diode parameters including barrier height, ideality factor, and saturation current. Profound variations have been observed in the dominant charge carrier transport mechanism for different C60 concentrations. A photoresponse study demonstrates the enhancement in the photocurrent with the increase in the C60 concentration up to 5 wt.%. Beyond this concentration, agglomeration impedes exciton dissociation and charge transport, which results in a decrease in the photocurrent. Finally, an impedance spectroscopy analysis has been extensively carried out to estimate the internal device parameters, such as junction resistance, capacitance and carrier lifetime. The correlation between these parameters and I–V curves has been established.     

S-matrix of a slot-coupled circular to rectangular waveguide T-junction

An analysis of a slot-coupled T-junction consisting of a circular to rectangular waveguide is presented. The Galerkin method of moments with entire domain sinusoidal basis functions is used to solve the slot aperture electric field integral equations taking into account finite wall thickness. The slot coupler characteristics are deduced, including resonant length and dominant mode scattering. The theoretical results on the magnitude of the s-parameters are compared with experimental results. The effect of the variation of diameter of the circular waveguide as well as the width of the slot on the resonant length of the slot is also studied.     

Hybrid NOMA for Future Radio Access: Design,Potentials and Limitations

Wireless Personal Communications - Next-generation internet of things (IoT) applications need numerous low-powered wireless mobile devices to connect with each other, having ultra-reliability and...     

Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions

In this paper, we have introduced an analytical subthreshold and strong inversion 3D potential model for rectangular gate (RecG) gate-all-around (GAA) MOSFET. The subthreshold and strong inversion potential distribution in channel region of a RecG MOSFET is obtained respectively by solving 3D Laplace and 3D Poisson equations. The assumed parabolic potential distribution along the z-axis in channel direction is appropriately matched with 3D device simulator after consideration of z-depended characteristic length in subthreshold region. For accurate estimation of short channel effects (SCE), the electrostatics near source and drain is corrected. The precise gate-to-gate potential distribution is obtained after consideration of higher order term in assumed parabolic potential profile. The model compares well with numerical data obtained from the 3D ATLAS as a device simulator and deckbuild as an interactive runtime of Silvaco Inc.     

Life prediction of LED-based recess downlight cooled by synthetic jet

This paper details the adaptation and implementation of a proposed hierarchical model to the reliability assessment of LED-based luminaires. An Edison base ? 6 in., compatible can, downlight ? LED replacement bulb, cooled by active synthetic jets, is used as the test vehicle. Based on the identified degradation mechanisms and the experimentally obtained degradation rate of the cooling device, the reduction in the heat sink enhancement factor, and thus the increase in the LED junction temperature, is determined as a function of time. The degradation mechanisms of the dual-function power electronics – providing constant power to the LEDs and to the drivers of a series of synthetic jets – are also analyzed and serve as the basis for a hybrid model which combines these two effects on the luminaire lifetime. The lifetime of a prototypical luminaire is predicted from LED lifetime data using the degradation analyses of the synthetic jet and power electronics.