Type, extent and use of colours in ready-to-eat (RTE) foods prepared in the non-industrial sector – a case study from Hyderabad, India

The type and extent of colours added to ready‐to‐eat (RTE) foods prepared in the non‐industrial sector of India was investigated. Of the 545 RTE foods analysed, 90% contained permitted colours, 2% contained a combination of permitted and non‐permitted colours and 8% contained only non‐permitted colours. However in RTE foods with permitted colours, 73% exceeded 100 ppm, as prescribed by the Prevention of Food Adulteration Act of India, and 27% were within the prescribed levels. Among the permitted colours, tartrazine was the most widely used colour followed by sunset yellow. The maximum concentration of colours was detected in sweet meats (18 767 ppm), non‐alcoholic beverages (9450 ppm), miscellaneous foods (6106 ppm) and hard‐boiled sugar confectioneries (3811 ppm). Among the non‐permitted colours found, rhodamine was most commonly used. Some of the foods, such as savouries and miscellaneous foods like sugar coated aniseed and almond milk, are not supposed to contain colours as per the Prevention of Food Adulteration Act, but were found to contain colours.     

X-ray Diffraction Investigation of the Formation of Nanostructured Metastable Phases During Short-Duration Mechanical Alloying of Cu-Al Powder Mixtures

Mechanical alloying is a powder processing technique used to process materials farther from equilibrium state. This technique is mainly used to process difficult to alloy materials in which the solid solubility is limited, and to process materials where non-equilibrium phases cannot be produced at room temperature through conventional processing techniques. In the present work, mechanical alloying/milling of selected compositions in the Al-Cu binary alloy system was carried out at a ball-to-powder weight ratio (BPR) of 2 : 1, to investigate alloying and subsequent heat treatment on microstructural changes as a result of short milling times. Copper-aluminum powder mixtures containing 5, 20, and 40 wt% Al (11, 37, and 61 at% Al, respectively) were subjected to mechanical alloying, and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and differential scanning calorimetry (DSC), after mechanical alloying and subsequent heat treatment. Nanometer-sized grains were observed in the as-milled crystalline powders in all compositions. Crystallite sizes were calculated using the Scherrer formula and found to be in the order of 10-20 nm after 360 minutes of milling time for all compositions. The XRD data show considerable solid solubility extension in these powders, and formation of intermetallic phases due to mechanical alloying and subsequent annealing. These changes are discussed in the context of the Al-Cu phase diagram.     

1.5 mu m compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arrays

The wide gain spectrum of compressive-strained multiquantum-well active layers was used to fabricate 20-wavelength distributed-feedback laser arrays. A record wide-wavelength span of 131 nm in the 1.5 mu m wavelength region was demonstrated. The maximum intrinsic modulation response, measured by a parasitic-free optical modulation technique, reaches 16 GHz.<>     

DEVELOPMENTS AND CHALLENGES IN FLAVOR PERCEPTION AND MEASUREMENT—A REVIEW

Flavor perception and measurement play important roles in the development of food products. In an increasingly commercial environment, the food industry must strive to minimize adverse consumer reactions. This article gives an extensive overview on the various methods used for flavor measurement. Principles of flavor release and perception are discussed and applications to quality assessment are demonstrated.     

Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance

The composition and temperature dependence (20K<T<380K) of the direct gap, E₀, of a series of GaAs_1−xN_x/GaAs (0≤x≤0.0232) samples has been measured using contactless electroreflectance. Our results for the composition dependence of E₀ are different in relation to a recent experiment [W.G. Bi and C.W Tu, Appl. Phys. Lett. 70, 1608 (1997)]. In contrast to previously reported results, we find that the temperature dependence of the direct gap is in fact dependent on N composition and that the parameters which describe the temperature dependence of the band gap lie between those of GaAs and GaN.     

A zero-voltage transition boost converter using a zero-voltage switching auxiliary circuit

A soft switching boost converter with zero-voltage transition (ZVT) main switch using zero-voltage switching (ZVS) auxiliary switches is proposed. Various operating intervals of the converter are presented and analyzed. Design considerations are discussed. A design example with experimental results obtained from a 300-W, 250-kHz, 300-V output DC-DC converter is presented. A modified gating scheme to utilize the auxiliary switch in the main power processing is discussed. A 600-W, 100-kHz, 380 V output, 90-250 V AC, power factor corrected, AC-to-DC, boost converter with the modified gating scheme is presented. Results show that the main switch maintains ZVT while auxiliary switches retain ZVS for the complete specified line and load conditions. Parasitic oscillations existing in the converters proposed in the literature are completely removed.     

Carrier dynamics in high-speed (f/sub -3 dB/>40 GHz) 0.98-/spl mu/m multiquantum-well tunneling injection lasers determined from electrical impedance measurements

Carrier capture times in InGaAs-AlAs-GaAs 0.98-/spl mu/m multiquantum-well tunneling injection lasers with f/sub -3 dB//spl sim/43-48 GHz have been determined from analysis of high frequency electrical impedance measurements. The capture times range from 14 ps, at biases around threshold, to about 1 ps, at 50-mA bias. The small capture times agree well with tunneling times obtained directly from pump-probe measurements. The impedance measurements also suggest that the carrier lifetime in the well is much less than the escape time from the well, consistent with the cold carrier distribution associated with a tunneling injection mechanism.     

Analysis of simultaneous ground and phase faults on a six phasepower system

An analysis is presented of any simultaneous sustained ground and phase fault. A single algebraic equation is presented for the calculation of sequence currents following a sustained simultaneous ground and phase fault at the terminals of a six-phase generator. The equation can be simulated on a digital computer or a network analyzer for the simulation of any type of fault. The connection of sequence networks is at once indicated when the sequence currents are written in the format suggested. The variety of faults on a six-phase system is far more complicated than on a three-phase system. The generalized treatment of all faults will prove useful in evolving protective relaying schemes for six-phase power systems     

Electro-chemical mechanical polishing of silicon carbide

In an effort to improve the silicon carbide (SiC) substrate surface, a new electro-chemical mechanical polishing (ECMP) technique was developed. This work focused on the Si-terminated 4H-SiC (0001) substrates cut 8° off-axis toward 〈1120〉. Hydrogen peroxide (H₂O₂) and potassium nitrate (KNO₃) were used as the electrolytes while using colloidal silica slurry as the polishing medium for removal of the oxide. The current density during the polishing was varied from 10 μA/cm² to over 20 mA/cm². Even though a high polishing rate can be achieved using high current density, the oxidation rate and the oxide removal rate need to be properly balanced to get a smooth surface after polishing. A two-step ECMP process was developed, which allows us to separately control the anodic oxidation and removal of formed oxide. The optimum surface can be achieved by properly controlling the anodic oxidation current as well as the polishing rate. At higher current flow (>20 mA/cm²), the final surface was rough, whereas a smoother surface was obtained when the current density was in the vicinity of 1 mA/cm². The surface morphology of the as-received wafer, fine diamond slurry (0.1 μm) polished wafer, and EMCP polished wafer were studied by high-resolution atomic force microscopy (AFM).