Modeling and Evaluation of a Policy Provisioning Architecture for Mobile Ad-Hoc Networks

The ability to dynamically configure mobile ad-hoc network (MANET) devices is critical for supporting complex services such as quality of service (QoS), security and access control in these networks. In our work, we address the problem of policy distribution and provisioning in MANETs. Previously, we have proposed a policy provisioning architecture that enables the operator, e.g., a military command and control center, to maintain a logically centralized control of the network as a whole, while allowing a physically decentralized and self-managing implementation essential for a MANET environment. In this paper, we present an analytical model of the availability of the policy distribution service in a MANET and analyze the performance using stochastic Petri nets (SPNs). We develop the model at two levels of complexity: as a simple Markovian model with Poisson assumptions and as a more accurate non-Markovian model with general distributions obtained using statistical parameterization. We compare and cross-validate the analytical results with simulation and experimental results. Finally, we illustrate the effectiveness of the architecture for managing QoS for soft real-time applications, using an emulated mobile ad-hoc network testbed.     

Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD

1.3- and 1.55-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs-InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 /spl mu/m) and 2.0 (for 1.55 /spl mu/m) mW single mode power at 25/spl deg/C, 0.6 mW single mode power at 85/spl deg/C and lasing operation at >100/spl deg/C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-/spl mu/m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-/spl mu/m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.     

Tunnel Oxide Growth on Silicon With “Wet Nitrous Oxide” Process for Improved Performance Characteristics

In this letter, the authors present the process, growth kinetics, and electrical characteristics of tunnel oxides grown by furnace oxidation of silicon at 800 degC in an ambient of nitrous oxide (N₂O) and water vapor. Tunnel oxides of thickness 82-92 Aring are grown by this "wet N₂O oxidation" process, and the electrical characteristics such as the capacitance-voltage, current-voltage, voltage ramp, time-dependent dielectric breakdown, and charge to breakdown are evaluated using MOS capacitor as the diagnostic device. The results obtained clearly demonstrate superior performance characteristics of this oxide for Flash memory applications, with excellent charge to breakdown and minimum change in the gate voltage during constant current stressing     

Illumination with solid state lighting technology

High-power light-emitting diodes (LEDs) have begun to differentiate themselves from their more common cousins the indicator LED. Today these LEDs are designed to generate 10-100 lm per LED with efficiencies that surpass incandescent and halogen bulbs. After a summary of the motivation for the development of the high-power LED and a look at the future markets, we describe the current state of high-power LED technology and the challenges that lay ahead for development of a true "solid state lamp." We demonstrate record performance and reliability for high-power colored and white LEDs and show results from the worlds first 100-plus lumen white LED lamp, the solid state equivalent of Thomas Edison's 20-W incandescent lightbulb approximately one century later     

Analysis and design of a parallel resonant converter with theresonating capacitor on a tertiary winding

A parallel resonant converter with the resonating capacitor placed on a tertiary winding is analyzed using the state-space approach. The general solutions are derived. Based on the analysis, design curves are plotted with variations in the normalized load current. A design procedure is presented by means of a design example. Experimental results obtained from a converter delivering 650 W at 12 V output are presented to verify the analysis     

Fixed-frequency PWM series-parallel resonant converter

A pulse-width-modulated (PWM) high-frequency link series-parallel resonant converter operating with fixed frequency is proposed. A simple analysis and design procedure are presented. The proposed configuration has a number of desirable features, viz., high efficiency for very wide load variations with a narrow range of duty-cycle ratio control, load short-circuit capability, etc. Detailed experimental results obtained from a 48 V output, 500 W experimental converter are presented to verify the concept     

Growth of high quality CdTe and ZnTe on Si substrates using organometallic vapor phase epitaxy

Epitaxial (100) CdTe and ZnTe layers with high crystalline quality have been grown on Si substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE). A thin Ge interfacial layer grown at low temperature was used as a buffer layer prior to ZnTe and CdTe growth. The layers were characterized by Nomarski optical microscopy and double crystal x-ray diffraction. Double crystal rocking curves with full width at half maximum of about 110 and 250 arc-sec have been obtained for a 7 μm thick ZnTe layer and a 4 μm thick CdTe layer, respectively. The results presented demonstrate a novel method ofin-situ Si cleaning step without a high temperature deoxidation process to grow high quality CdTe and ZnTe on Si in a single OMVPE reactor.     

Ion-cleaning damage in (100) GaAs,and its effect on schottky diodes

This study investigates the effect of ion cleaning damage of (100) GaAs in the 100–1000 eV range, and also its recovery with thermal annealing to 400°C. It is shown that GaAs could be annealed to a considerable extent if the ion-damage was ? 100 eV. However, full recovery was not achieved. On the other hand, samples damaged at ? 400 eV became progressively worse with annealing. Measurements indicate that these samples are dominated by the effect of arsenic variances within the bulk. These remain in the bulk, but are distributed spatially upon annealing. They behave as deep donors, so that the net electron concentration in the bulk is enhanced. Aluminum-n GaAs Schottky diodes were used as a vehicle for this study.