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91.
An inertia-adaptive particle swarm system with particle mobility factor for improved global optimization 总被引:2,自引:2,他引:0
Sayan Ghosh Swagatam Das Debarati Kundu Kaushik Suresh B. K. Panigrahi Zhihua Cui 《Neural computing & applications》2012,21(2):237-250
Particle Swarm Optimization (PSO) has recently emerged as a nature-inspired algorithm for real parameter optimization. This
article describes a method for improving the final accuracy and the convergence speed of PSO by firstly adding a new coefficient
(called mobility factor) to the position updating equation and secondly modulating the inertia weight according to the distance
between a particle and the globally best position found so far. The two-fold modification tries to balance between the explorative
and exploitative tendencies of the swarm with an objective of achieving better search performance. We also mathematically
analyze the effect of the modifications on the dynamics of the PSO algorithm. The new algorithm has been shown to be statistically
significantly better than the basic PSO and four of its state-of-the-art variants on a twelve-function test-suite in terms
of speed, accuracy, and robustness. 相似文献
92.
This paper presents a fuzzy-Pareto dominance driven possibilistic model based planning of electrical distribution systems using multi-objective particle swarm optimization (MOPSO). This multi-objective planning model captures the possibilistic variations of the system loads using a fuzzy triangular number. The MOPSO based on the Pareto-optimality principle is used to obtain a set of non-dominated solutions representing different network structures under uncertainties in load demands and these non-dominated solutions are stored in an elite archive of limited size. Normally, choosing the candidate non-dominated solutions to be retained in the elite archive while maintaining the quality of the Pareto-approximation front as well as maintaining the diversity of solutions on this front is very much computationally demanding. In this paper, the principles of fuzzy Pareto-dominance are used to find out and rank the non-dominated solutions on the Pareto-approximation front. This ranking in turn is used to maintain the elite archive of limited size by discarding the lower ranked solutions. The two planning objectives are: (i) minimization of total installation and operational cost and (ii) minimization of risk factor. The risk factor is defined as a function of an index called contingency-load-loss index (CLLI), which captures the effect of load loss under contingencies, and the degree of network constraint violations. The minimization of the CLLI improves network reliability. The network variables that are optimized are: (i) number of feeders and their routes, and (ii) number and locations of sectionalizing switches. An MOPSO (developed by the authors), based on a novel technique for the selection and assignment of leaders/guides for efficient search of non-dominated solutions, is used as the optimization tool. The proposed planning approach is validated on a typical 100-node distribution system. Performance comparisons between the planning approaches with the possibilistic and deterministic load models are provided highlighting the relative merits and demerits. It is also verified that the proposed solution ranking scheme based on the fuzzy-Pareto dominance is very much better from both quality and computational burden point of view in comparison with the other well-known archive truncation techniques based on clustering and solution density measurement etc. 相似文献
93.
P V Ananthapadmanabhan A V Bapat A K Das B K Karan R Majumder R K Marwah D S Patil S V K Rao V K Rohatgi K G Sankaran P Satyamurthy R Sharma P B Shrivastava M K Totlani N Venkat-Ramani F A Akopov A V Karpukhin V V Kirillov V I Maksimenko A S Prokop A I Romanov B V Roshin E V Shishkov A S Tikhotsky V I Zalkind N I Antonov V V Brajevsky D K Burenkov V A Efremov V N Sukhov 《Sadhana》1982,5(3):169-195
This paper summarizes the major results of the joint Indo-Soviet experiment for testing the Indianmhd generator channel section, designed and fabricated at the Bhabha Atomic Research Centre, Bombay, which was carried out at the U-02 facility in Moscow, USSR, in May 1980. The total test duration was 65 hours and included electrophysical tests and life tests under applied electric fields. The main purpose of the tests was to substantiate the physical concepts, computer codes, design features and special processing techniques involved in the development ofmhd generators for the Indian pilot plant at Tiruchirapalli. The experimental observations on the phenomena of heat transfer to the walls, gas dynamics in the channel, electrical characteristics of the generator and near-electrode processes including the analysis of arc spots correlate with the theoretical estimates based on present understanding of the physical processes occuring in similarmhd generators. The post-operational inspection of the channel section and extensive investigation of materials through microscopic analysis, chemical analysis and x-ray analysis are also reported in this paper. The joint test programme has clearly demonstrated the definite operating capability of the test section and has given sufficient information and encouragement for building better and improved channels for the future. 相似文献
94.
Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique
in a vacuum of 10-6 torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength
side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main
spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity
region of the studied ZnTe thin films.
The paper was presented at the 6th Asian Thermophysical Properties Conference (6th ATPC), held at Gauhati University, during
8–11 October 2001. 相似文献
95.
Group III-V compound B-Sb films were synthesized from B/Sb/…/B multilayer films deposited by electron gun evaporation onto
silicon substrate and subjecting the above multilayer to rapid thermal annealing at 773 K for 3 min. The films were characterized
by XRD, TEM, XPS and optical studies. XPS studies indicated the ratio of B: Sb ∼ 1. XRD and electron diffraction patterns
indicated the reflections from (100), (111), (102) and (112) planes of zinc blende BSb. Band gap evaluated from optical studies
was ∼ 0·51 eV. Refractive index of the films varied between 1·65 and 2·18 with increasing energy of incident photon and plasma
frequency (ωp) was estimated to be ∼2·378×10−14 s−1. The effective mass was computed to be ∼ 0·0845 me. 相似文献
96.
Gullo L.J. Azarian M.H. Das D. Schenkelberg F. Tiku S. 《Components and Packaging Technologies, IEEE Transactions on》2006,29(2):425-428
A reliability capability assessment process can assist OEMs and system integrators in assessing prospective suppliers for their ability to design and manufacture reliable products before they are delivered for use, and on an ongoing basis, help a company in identifying shortcomings in its reliability program, which can be rectified by subsequent improvement actions. The assessment can also help to establish reliability management practices for use by designers, suppliers, customers, and independent authorities. The assessment method may be used to evaluate the reliability capability of all types of electronics-related industries that perform activities influencing the reliability of a product. It can produce increased customer satisfaction, provide competitive opportunities, and shorten the product development cycle. In summary, a reliability capability assessment can be used for: 1) specifying or planning reliability practices if product development is implemented internally; 2) evaluating reliability practices to determine the extent to which a supplier is capable of providing a product that meets the reliability requirements/needs; and 3) improving reliability practices if the current reliability practices have been evaluated and improvement is desired or required. 相似文献
97.
Crozatier V. Das B.K. Baili G. Gorju G. Bretenaker F. Le Gouet J.-L. Lorgere I. Sohler W. 《Photonics Technology Letters, IEEE》2006,18(14):1527-1529
A frequency agile extended cavity diode laser using an integrated Bragg reflector in a Ti : Fe : LiNbO/sub 3/ waveguide is developed and characterized. The laser emits up to 7 mW in the 1.5-/spl mu/m telecommunication window. The emission spectrum exhibits a 18-kHz linewidth, >40-dB sidemode suppression ratio, and a wavelength stability of /spl plusmn/1 pm over hours. Very fast mode hop-free frequency tuning is achieved through the electrooptic effect, with a tuning slope of 55.5 MHz/V. 相似文献
98.
Das J. Oprins H. Ji H. Sarua A. Ruythooren W. Derluyn J. Kuball M. Germain M. Borghs G. 《Electron Devices, IEEE Transactions on》2006,53(11):2696-2702
AlGaN/GaN high electron mobility transistors (HEMT) on sapphire substrates have been studied for their potential application in RF power applications; however, the low thermal conductivity of the sapphire substrate is a major drawback. Aiming at RF system-in-a-package, the authors propose a flip-chip-integration approach, where the generated heat is dissipated to an AlN carrier substrate. Different flip-chip-bump designs are compared, using thermal simulations, electrical measurements, micro-Raman spectroscopy, and infrared thermography. The authors show that a novel bump design, where bumps are placed directly onto both source and drain ohmic contacts, improves the thermal performance of the HEMT 相似文献
99.
Yonghe Liu Sajal K. Das 《Communications Magazine, IEEE》2006,44(11):142-147
Conventional wireless sensor networks rely mostly on simple scalar data (such as temperature or humidity) and specialize in single-purpose applications. Taking a fundamental departure, in this article we motivate information-rich wireless video sensor networks that emulate the compound eyes found in certain arthropods. Although constrained by scarce resources, sensor nodes can only serve extremely low-resolution video streams; the availability of vast amount of such streams due to deployment redundance can suffice for the need of information hungry applications. Unfortunately, the unique characteristics of wireless video sensor networks will introduce novel uncertainty-driven challenges in the information-intensive and yet resource-constrained environment. Correspondingly, we describe key research problems in the areas of networking, security, sensor design, and video-data analysis 相似文献
100.
The fabrication of silicon based micromechanical sensors often requires bulk silicon etching after aluminum metallization. All wet silicon etchants including ordinary undoped tetramethyl ammonium hydroxide (TMAH)-water solution attack the overlaying aluminum metal interconnect during the anisotropic etching of (100) silicon. This paper presents a TMAH-water based etching recipe to achieve high silicon etch rate, a smooth etched surface and almost total protection of the exposed aluminum metallization. The etch rate measurements of (100) silicon, silicon dioxide and aluminum along with the morphology studies of etched surfaces are performed on both n-type and p-type silicon wafers at different concentrations (2, 5, 10 and 15%) for undoped TMAH treated at various temperatures as well as for TMAH solution doped separately and simultaneously with silicic acid and ammonium peroxodisulphate (AP). It is established through a detailed study that 5% TMAH-water solution dual doped with 38 gm/l silicic acid and 7 gm/l AP yields a reasonably high (100) silicon etch rate of 70 μm/h at 80 °C, very small etch rates of SiO2 and pure aluminum (around 80 Å/h and 50 Å/h, respectively), and a smooth surface (±7 nm) at a bath temperature of 80 °C. The etchant has been successfully used for fabricating several MEMS structures like piezoresistive accelerometer, vaporizing liquid micro-thruster and flow sensor. In all cases, the bulk micromachining is carried out after the formation of aluminum interconnects which is found to remain unaffected during the prolonged etching process at 80 °C. The TMAH based etchant may be attractive in industry due to its compatibility with standard CMOS process. 相似文献