MANET接入技术研究

以移动AdHoc网络(MobileAdHocNetworks)的接入技术为研究对象,介绍了该网络的特点及其采用的各种接入技术,并以双忙音多址(DBTMA)和RTS/CTS两种接入技术为例,比较了它们对网络性能的影响,最后是对MANET接入技术的总结。     

Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As

Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes.     

Automatic gait recognition based on statistical shape analysis

Gait recognition has recently gained significant attention from computer vision researchers. This interest is strongly motivated by the need for automated person identification systems at a distance in visual surveillance and monitoring applications. The paper proposes a simple and efficient automatic gait recognition algorithm using statistical shape analysis. For each image sequence, an improved background subtraction procedure is used to extract moving silhouettes of a walking figure from the background. Temporal changes of the detected silhouettes are then represented as an associated sequence of complex vector configurations in a common coordinate frame, and are further analyzed using the Procrustes shape analysis method to obtain mean shape as gait signature. Supervised pattern classification techniques, based on the full Procrustes distance measure, are adopted for recognition. This method does not directly analyze the dynamics of gait, but implicitly uses the action of walking to capture the structural characteristics of gait, especially the shape cues of body biometrics. The algorithm is tested on a database consisting of 240 sequences from 20 different subjects walking at 3 viewing angles in an outdoor environment. Experimental results are included to demonstrate the encouraging performance of the proposed algorithm.     

大规模定制环境下 ERP 的发展

ERP─EnterpriseResourcePlanning企业资源计划系统 ,是指建立在信息技术基础上 ,以系统化的管理思想 ,为现代企业决策层及员工提供决策运行手段的管理平台。从竞争环境的角度出发 ,提出了大规模定制已经逐渐成熟并最终取代大规模生产成为新的生产经营模式的观点 ,同时 ,分析了在大规模定制下传统ERP的局限 ,从管理和技术的角度探讨新一代ERP的特点及发展。     

采用全对称测试结构的超薄单晶硅薄膜热导率测亮

改进了传统稳态加热法的测试结构,设计了带隔离槽的全对称悬空薄膜测试结构,并使用有限元工具对测试结构进行了优化.测量了室温下50和80nm厚度的单晶硅薄膜的横向热导率,分别为32和38W/(m·K),其相对体硅热导率(148W/(m·K))有明显下降,实验结果与BTE(Boltzmann transport equation)的理论预测曲线吻合得很好.     

数值分析渐变DBR对垂直腔面发射激光器谐振腔模的影响

通过数值分析研究了含线性渐变层的Al0.9Ga0.1As/AlyGa1-yAs/GaAs/AlxGa1-xAS DBR的光学特性及其对VCSEL谐振腔光学特性的影响,建立了渐变型DBR渐变层厚度与折射率的关系,通过特征矩阵法计算了突变GaAs/Al0.9Ga0.1AS DBR和渐变型DBR的反射谱和反射相移,分析了渐变层对DBR反射率和反射相移的影响.对渐变型DBR,要使VCSEL谐振腔满足中心波长相位匹配条件,还需要在DBR靠近谐振腔一侧的最前面增加一定厚度的渐变层,称为相位匹配层.通过计算,我们得到了使VCSEL谐振腔满足相位匹配条件时均匀层和相位匹配层的厚度.     

一种新颖的应变Si沟道 pMOSFET制作技术

在应变Si沟道异质结场效应晶体管(HFET)制作过程中,引入分子束外延(MBE)低温Si(LT-Si)技术,大大减少了弛豫SiGe层所需的厚度.TEM结果表明,应变Si层线位错密度低于106cm-2.原子力显微镜(AFM)测试表明,其表面均方粗糙度小于1.02nm.器件测试结果表明,与相同条件下的体Si pMOSFET相比,空穴迁移率提高了25%.     

集成CMOS四象限模拟乘法器

给出了一种CMOS型四象限模拟乘法器,该乘法器采用有源衰减器结合吉尔伯特单元结构.利用基于CSMC的0.6μm n阱2p2m工艺SPICE BSIM3V3 MOS模型(level=49)进行仿真,采用单电源5V电压供电.利用HSPICE仿真并给出了仿真的结果及版图实现.     

高速12位D/A转换器

介绍了高速12位D/A转换器的电路设计,采用2μm等平面高速双极工艺,研制出数据更新率≥80MHz,线性误差≤3LSB,微分非线性≤3LSB的12位D/A转换器电路.     

Design of Ultra-Wideband Monopulse Receiver

In this paper, we propose a novel amplitude-comparison monopulse receiver architecture for ultra-wideband radars. This monopulse receiver consists of four ridged-horn antennas placed in a square-feed configuration, a comparator circuit that generates the monopulse sum and difference signals, cross-correlation receivers that detect the monopulse signals, and an amplitude-comparison monopulse processor that determines the target's angular position. The derived monopulse sum and difference signals are verified through measurements. The derived sum and difference patterns are compared with measured patterns, and they show good agreements-measured 3-dB beamwidth=6.4deg(derived=6deg), measured unambiguous tracking range=plusmn5deg(derived=plusmn5deg), and measured sum pattern sidelobe level=-6 dB (derived=-8 dB)