A Low-Complexity Precoding Scheme for Downlink Massive MU-MIMO Systems with Low-Resolution DACs

In this paper, we investigate the problem of downlink precoding for the narrowband massive multi-user multiple-input multiple-output (MU-MIMO) system with low-resolution digital-to-analog converters (DACs). We introduce a low-complexity precoding scheme based on the alternating direction method of multipliers (ADMM) framework in this work. An efficient gradient descent (GD) algorithm with adaptive step-size determination mechanism (ASGD) is proposed to alleviate the computational complexity bottleneck of the inherent matrix inversion. Numerical results demonstrate that the ASGD precoder achieves an attractive trade-off between the performance and computational complexity compared with other counterparts.

     

Growth of Strained Si1－xGex Layer by UV/UHV/CVD

Strained Si1－xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃，respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si1－xGex and multilayer Si1－xGex /Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing highquality Si1－xGex /Si strained layers.     

Ionic Liquid Analogs of AlCl3 with Urea Derivatives as Electrolytes for Aluminum Batteries

The ionic liquid analog, formed through the mixture of urea and AlCl₃, has previously shown to serve as a low‐cost electrolyte for an aluminum‐graphite battery, while maintaining good performance and achieving high Coulombic efficiency. Undesirable are the relatively high viscosity and low conductivity of this electrolyte, when compared to chloroaluminate ionic liquids with organic cations. In this work, the fundamental changes to the electrolyte resulting from using derivatives of urea (N‐methyl urea and N‐ethyl urea), again mixed with AlCl₃, are examined. These electrolytes are shown to have significantly lower viscosities (η = 45, 67, and 133 cP when using N‐ethyl urea, N‐methyl urea, and urea, respectively, at 25 °C). The associated batteries exhibit higher intrinsic discharge voltages (2.04 and 2.08 V for N‐methyl urea and N‐ethyl urea electrolytes, respectively, vs 1.95 V for urea system@100 mA g^?1 specific current for ≈5 mg cm^?2 loading), due to changes in concentrations of ionic species. Aluminum deposition is directly observed to primarily occur through reduction of Al₂Cl₇^? when AlCl₃ is present in excess, in contrast to previously suggested cationic Al‐containing species, via operando Raman spectroscopy performed during cyclic voltammetry.     

基于阵列波导光栅的大规模光交换系统研究

光交换系统是波长路由、中心数据传输中的核心部分,目前光网络的发展方向是实现高速、多端口数和大容量光交换。采用 AWG(阵列波导光栅)的波长路由技术结合高速波长可调激光器,是实现大规模光交换系统中纳秒级开关时间的最有效的技术方案。文章分别从 AWGR(阵列波导光栅路由器)的周期性、串联、并联以及串并联等4个方面,对不同的架构方案进行了阐述。     

超高斯脉冲反饱和吸收效应响应特性理论模拟

基于非线性传输方程与五能级速率方程的耦合模型分析了超高斯脉冲在反饱和吸收(RSA)作用下的动态响应特性。研究了脉冲时空波形在RSA材料中的演化规律以及脉冲与材料相互作用的动力学过程。讨论了单重态第一激发态寿命对输出脉冲时空波形的影响,并优化了材料参数以避免时空畸变。对新型RSA材料的开发以及在时空波形敏感领域的应用具有指导意义。     

外延用300mm重掺B Si衬底中热致微缺陷研究

研究了重掺B对300 mm直拉Si衬底中热致微缺陷的影响.通过800℃/4～16 h+1 100℃/16 h的低-高两步退火处理发现,与普通(CZ)Si片相比,重掺B(HBCZ)Si片体内生成了高密度的热致微缺陷--体微缺陷(BMDs);B浓度的不同对BMDs的形态也有重要影响,重掺B Si片中出现杆状层错,随着B浓度的增加,层错密度增加,尺寸减小.研究表明,重掺B对BMDs的促进作用主要归功于B原子促进了氧沉淀的异质形核并由于原子半径效应使得这些核心较容易长大,而晶体中初始氧含量不是重掺B促进氧沉淀的主要因素.     

Robust image hash function using local color features

Conventional image hash functions only exploit luminance components of color images to generate robust hashes and then lead to limited discriminative capacities. In this paper, we propose a robust image hash function for color images, which takes all components of color images into account and achieves good discrimination. Firstly, the proposed hash function re-scales the input image to a fixed size. Secondly, it extracts local color features by converting the RGB color image into HSI and YCbCr color spaces and calculating the block mean and variance from each component of the HSI and YCbCr representations. Finally, it takes the Euclidian distances between the block features and a reference feature as hash values. Experiments are conducted to validate the efficiency of our hash function. Receiver operating characteristics (ROC) curve comparisons with two existing algorithms demonstrate that our hash function outperforms the assessed algorithms in classification performances between perceptual robustness and discriminative capability.     

有线电视网络升级改造新模式--可寻址双向可分段宽带接入网

1,有线电视网络建设和升级改造目前面临的问题。为了加快有线电视数字化的发展,尽快实现整体转换,很多有线电视运营商正在抓紧进行有线电视网络升级改造,如何根据当前形势发展的需要,高质量地建设好有线电视网络,已经成为一个急需解决的重要问题。     

Transition Mechanism of InAs Quantum Dot to Quantum Ring Revealed by Photoluminescence Spectra

The transition mechanism of InAs quantum dot (QD) to quantum ring (QR) was investigated. After the growth of InAs QDs, a thin layer of GaAs was overgrown on the InAs QD and the sample was annealed at the same temperature for a period of time. It was found that the central part of the InAs islands started to out diffuse and formed ring shape only after a deposition of a critical thickness (1 ~ 2 nm) of GaAs capped layer depending on the size of InAs QDs. This phenomenon was revealed by photoluminescence measurement and atomic force microscopy image. It is suggested that the strain energy provided by the GaAs overgrown layer is responsible for the InAs to diffuse out of the island to form QR.     

A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion

An improved hot-hole-involved interface-state generation model is proposed for hot-carrier injection (HCI) degradation in high-voltage (HV) nMOSFETs. This model is based on experiments over a wide range of temperatures, voltage conditions, simulation results, and the underlying physical mechanisms. The model provides a thorough picture of an HCI system in HV nMOSFETs, with hot-hole injection related to an additional maximum electric-field region. The hot-hole injection in HCI is assumed to introduce deeper localized hydrogen states in gate-oxide films than that in negative-bias temperature instabilities. This result facilitates the dispersive transport of hydrogen. Therefore, HCI degradation in HV transistors is explained within the framework of disorder-controlled hydrogen kinetics. The power-law model can successfully predict temperature dependences for HCI degradation.