Interfacial reaction in ASZ/A384 Al composite and its influence on mechanical properties

In an ASZ/A384 Al composite, the interfacial reaction was observed to take place between the SiO₂ binder layer and Mg within the matrix to form MgAl₂O₄ at the interface. Formation of MgAl₂O₄ at the interface between ASZ short fibers and the Al matrix alloy is believed to enhance the interfacial bonding strength, resulting in improved composite strength. However, the interfacial reaction in the ASZ/A384 Al proceeds at the expense of Mg in the matrix, resulting in a composite devoid of Mg bearing precipitates such as Al₂CuMg and Mg₂Si.     

Effect of surface coating on the screw loosening of dental abutment screws

Regardless of the type of performed restoration, in most cases, a screw connection is employed between the abutment and implant. For this reason, implant screw loosening has remained a problem in restorative practices. The purpose of this study was to compare the surface of coated/plated screws with titanium and gold alloy screws and to evaluate the physical properties of coated/plated material after scratch tests via FE-SEM (field emission scanning electron microscopy) investigation. GoldTite, titanium screws provided by 3i (Implant Innovation, USA) and TorqTite, titanium screws by Steri-Oss (Nobel Biocare, USA) and gold screws and titanium screws by AVANA (Osstem Implant, Korea) were selected for this study. The surface, crest, and root of the abutment screws were observed by FE-SEM. A micro-diamond needle was also prepared for the scratch test. Each abutment screw was fixed, and a scratch on the surface of the head region was made at constant load and thereafter the fine trace was observed with FE-SEM. The surface of GoldTite was smoother than that of other screws and it also had abundant ductility and malleability compared with titanium and gold screws. The scratch tests also revealed that teflon particles were exfoliated easily in the screw coated with teflon. The titanium screw had rough surface and low ductility. The clinical use of gold-plated screws is recommended as a means of preventing screw loosening.     

High temperature oxidation of Ti−48%Al−2%W intermetallics

Powder metallurgically produced Ti-48% Al-2%W alloys were oxidized between 800 and 1050°C in air. The W-addition was quite effective in providing isothermal and cyclic oxidation resistance. The alloys oxidized parabolically up to 1050°C during isothermal oxidation, with small weight gains. The scales were adherent up to 900°C during cyclic oxidation. Oxide scales consisted primarily of an outer TiO₂ layer, an intermediate Al₂O₃ layer, and an inner (TiO₂+Al₂O₃) mixed layer. Tungsten was present below the intermediate Al₂O₃ layer. and also at the scale-matrix interface as W-enriched compounds. Below the oxide scale, a Ti₃Al zone containing some W and O existed.     

A scanning tunneling microscopy tip with a stable atomic structure

A single stable adatom on a {110}-type plane of a tungsten tip is created via field-evaporation in a field-ion microscope (FIM) operating at room temperature. This single adatom has sufficient surface mobility at room temperature and migrates, in one-dimension, along a <111>-type direction toward an edge of a {110}-type plane, due to the existence of an electric field gradient. The plane edge has a higher local electric field than its center, since it has a higher local geometric curvature. This result implies that the stable position of a single adatom during a scan of a scanning tunneling microscope (STM) tip on a surface is at the edge and not at the center of a {110}-type plane at room temperature. Therefore, the electron wave function of a tip is not symmetric and this fact should be taken into account in a careful analysis of STM images. Also a tip with a dislocation emerging at a {110}-type plane is suggested as an improved STM tip configuration, as the step at the surface, created by the intersection of the dislocation with it, is a perpetual source of single adatoms.     

Reassessment of Ni-Al and Ni-Fe-Al solidus temperatures

Solidus temperatures of the B2 NiAl phase have been determined by high-temperature differential thermal analysis for binary melt compositions Ni_xAl_100−x (45<x<57) and for ternary alloys Fe_yNi_50−yAl₅₀ (0≤y≤50). It was shown that the melting temperature of the stoichiometric Ni₅₀Al₅₀ phase is 1681 °C, which is 43 K higher than some literature data. The solidus line at the Ni-rich side of the Ni-Al phase diagram exhibits a steeper slope than that reported previously. Substituting Fe for Ni, the decrease of solidus temperature along the isoplethal section with 50 at.% Al of the ternary Ni-Fe-Al phase diagram exhibits a steep initial slope of −13 K/at.% Fe for small Fe-fractions, which changes into a nearly linear decrease with an average slope of −8.5 K/at.% Fe.     

Poly(N-methylaniline) coatings on stainless steel by electropolymerization

Poly(N-methylaniline) (PNMA) coatings have been electropolymerized on 304 stainless steel alloy by potentiodynamic, galvanostatic and potentiostatic synthesis techniques from aqueous solutions of 0.1 M N-methylaniline (NMA) and 0.3 M oxalic acid. Characterization of PNMA coatings was carried out by cyclic voltammetry, UV-Vis and FTIR spectroscopy techniques. Corrosion behavior of PNMA coated stainless steel electrodes was investigated using linear anodic potentiodynamic polarization, Tafel test, chronoamperometry and electrochemical impedance spectroscopy (EIS) techniques in 0.5 M aqueous HCl solutions. Corrosion test results showed that PNMA coatings possessed protection to uncoated stainless steel against corrosion.     

Pd/Ge(or Si)/Pd/Ti/Au ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs

Pd/Ge/Pd/Ti/Au and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Pd/Ti/Au ohmic contact, a minimum specific contact resistivity of 1.1×10⁻⁶ Ωcm² was achieved by annealing at 425°C/10s, but the ohmic performance was slightly degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, a non-spiking planar interface and relatively good ohmic contact (high-10⁻⁶ Ωcm²) were maintained after annealing at 450°C/10s. In the Pd/Si/Pd/Ti/Au ohmic contact, in spite of the lower barrier height of the metal-InGaAs junction, as-deposited contacts showed non-ohmic behaviors due to the presence of the insulating Si layer. However, the specific contact resistivity decreased remarkably to 4.3×10⁻⁷ Ωcm² by annealing at 425°C/10s. Minimum specific contact resistivity of 3.9×10⁻⁷ Ωcm² was achieved by annealing at 400°C/20s. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Pd/Ti/Au and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 65.0 GHz and 74.4 GHz, respectively, and maximum oscillation frequencies were 51.3 GHz and 52.5 GHz, respectively, indicating very successful high frequency operations.     

Dynamic Young’s modulus and internal friction in polycrystalline copper

An attempt has been made to measure the temperature dependence of dynamic Young’s modulus together with the related variation of internal friction in polycrystalline copper. A mechanical spectroscopy study was employed using a standard servo hydraulic fatigue testing machine equipped with a scanning laser extensometer. Dynamic Young’s modulus and internal friction were measured over a temperature range of 298 to 873 K at very low frequencies of 0.1, 0.05, and 0.01 Hz. One internal friction peak was observed over the ranges 450 to 700 K, together with marked decreases in the dynamic Young’s modulus in the same temperature range. From a quantitative analysis of the experimental data with the relaxation strength, relaxation time, and activation energy, it is concluded that the peak phenomenon is due to grain-boundary sliding relaxation.     

Effect of bismuth on the growth kinetics of intermetallic compounds in Sn-3.5Ag solder joints: A growth kinetic model

The effect on the growth kinetics of the intermetallic compounds (IMCs) in solder/Cu joints, caused by adding Bi to eutectic Sn-3.5Ag solder alloy, was examined at the aging temperatures of 150°C and 180°C. The Cu₆Sn₅ layer growth was significantly enhanced, but the Cu₃Sn layer growth was slightly retarded by the addition of Bi, resulting in significant growth enhancement of the total (Cu₆Sn₅+Cu₃Sn) IMC layer with increasing Bi addition. The IMC layer growth in the Bi-containing solder joints was accompanied by the accumulation of Bi ahead of the Cu₆Sn₅ layer that resulted in the formation of a liquid layer at the Cu₆Sn₅/solder interface. A kinetic model was developed for the planar growth of the Cu₆Sn₅ and Cu₃Sn layers in the solder joints, accounting for the existence of interfacial reaction barriers. Predictions from the kinetic model showed that the experimental results could be well explained by the hypothesis that the formation of a Bi-rich liquid layer at the Cu₆Sn₅/solder interface reduces the interfacial reaction barrier at the interface.     

Characteristics of ZnO thin film deposited on various metal bottom electrodes

ZnO films for electronic applications were deposited by radio-frequency (rf) sputtering onto various metal bottom electrodes (Pt/Ti, W, Ni) to investigate such structural properties as crystallinity and surface morphology. The crystallinity, surface morphology and composition of the as-deposited films were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford back-scattering spectrometry (RBS), respectively. The preferred orientation and surface morphologies were strongly influenced by the type of bottom electrodes. The ZnO films with (200) texturing deposited on Pt/Ti/SiO₂/Si showed a smoother and smaller grain size than those deposited on W and Ni. The ZnO films on Pt and W electrodes exhibited compressive residual stress. This article is based on a presentation made in the 2002 Korea-US symposium on the “Phase Transformations of Nano-Materials”, organized as a special program of the 2002 Annual Meeting of the Korean Institute of Metals and Materials, held at Yonsei University, Seoul, Korea on October 25–26, 2002.