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991.
Does personality change across the entire life course, and are those changes due to intrinsic maturation or major life experiences? This longitudinal study investigated changes in the mean levels and rank order of the Big Five personality traits in a heterogeneous sample of 14,718 Germans across all of adulthood. Latent change and latent moderated regression models provided 4 main findings: First, age had a complex curvilinear influence on mean levels of personality. Second, the rank-order stability of Emotional Stability, Extraversion, Openness, and Agreeableness all followed an inverted U-shaped function, reaching a peak between the ages of 40 and 60 and decreasing afterward, whereas Conscientiousness showed a continuously increasing rank-order stability across adulthood. Third, personality predicted the occurrence of several objective major life events (selection effects) and changed in reaction to experiencing these events (socialization effects), suggesting that personality can change due to factors other than intrinsic maturation. Fourth, when events were clustered according to their valence, as is commonly done, effects of the environment on changes in personality were either overlooked or overgeneralized. In sum, our analyses show that personality changes throughout the life span, but with more pronounced changes in young and old ages, and that this change is partly attributable to social demands and experiences. (PsycINFO Database Record (c) 2011 APA, all rights reserved)  相似文献   
992.
The recently synthesized high-performance triarylamine dyes with the dithienosilole π-conjugated spacer for efficient organic solar cells are calculated at the density functional theory (DFT) level with the Bader approach for the quantum theory of atoms in molecule (QTAIM) analysis. The presence of stabilizing intramolecular hydrogen bonds and Van der Waals interactions in the dye molecules is predicted and the energies of these interactions are estimated. The electronic bands nature in absorption spectra of the dyes is determined by the time-dependent DFT calculations with a linear response methodology using B3LYP and BMK hybrid functionals. Relations between incident light absorption intensity in the first long-wavelength band of the dye, its polarization, HOMO-LUMO orbital nature and the driving force of electron injection to the semiconductor are discussed.  相似文献   
993.
994.
The authors show in this paper that magnetizable particles are obtained from the metallurgic slag coming from steel semi-finished products, cast in shells, processed in argon plasma jet. The experimental installation and the technical process are described. The mechanisms of microparticles formation in plasma are presented and the experimental results are discussed.  相似文献   
995.
The reasons of the self-organization of carbon-metal systems into graphite- or diamond-like nanotube were firstly discussed. Non-transition metals, which do not form carbide, have highly disposed free levels and the metal phase formation does not allow energy relaxation over metal phase, which evolves as a result of recombining carbon-carbon bonds. Therefore the energy is conserved as a metastable state such as diamond-like nanotubes or films. Transition metals, which cannot form stable carbides, produce fullerene and graphite-like nanotube structures because these metals produce relaxing the recombination energy of carbon atoms on forming the stable graphitic structures.  相似文献   
996.
Silicon carbide and diamond for high temperature device applications   总被引:1,自引:0,他引:1  
The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates. These semiconductors have been recognized for several decades as being suitable for these applications, but until recently the low material quality has not allowed the fabrication of high quality devices. Silicon carbide and diamond based electronics are at different stages of their development. An overview of the status of silicon carbide's and diamond's application for high temperature electronics is presented. Silicon carbide electronics is advancing from the research stage to commercial production. The most suitable and established SiC polytype for high temperature power electronics is the hexagonal 4H polytype. The main advantages related to material properties are: its wide bandgap, high electric field strength and high thermal conductivity. Almost all different types of electronic devices have been successfully fabricated and characterized. The most promising devices for high temperature applications are pn-diodes, junction field effect transistors and thyristors. MOSFET is another important candidate, but is still under development due to some hidden problems causing low channel mobility. For microwave applications, 4H-SiC is competing with Si and GaAs for frequency below 10 GHz and for systems requiring cooling like power amplifiers. The unavailability of high quality defect and dislocation free SiC substrates has been slowing down the pace of transition from research and development to production of SiC devices, but recently new method for growth of ultrahigh quality SiC, which could promote the development of high power devices, was reported. Diamond is the superior material for high power and high temperature electronics. Fabrication of diamond electronic devices has reached important results, but high temperature data are still scarce. PN-junctions have been formed and investigated up to 400 C. Schottky diodes operating up to 1000 C have been fabricated. BJTs have been fabricated functioning in the dc mode up to 200 C. The largest advance, concerning development of devices for RF application, has been done in fabrication of different types of FETs. For FETs with gate length 0.2 μ m frequencies fT = 24.6 GHz, fmax (MAG) = 63 GHz and fmax (U) = 80 GHz were reported. Further, capacitors and switches, working up to 450 C and 650 C, respectively, have also been fabricated. Low resistant thermostable resistors have been investigated up to 800 C. Temperature dependence of field emission from diamond films has been measured up to 950 C. However, the diamond based electronics is still regarded to be in its infancy. The prerequisite for a successful application of diamond for the fabrication of electronic devices is availability of wafer diamond, i.e. large area, high quality, inexpensive, diamond single crystal substrates. A step forward in this direction has been made recently. Diamond films grown on multilayer substrate Ir/YSZ/Si(001) having qualities close those of homoepitaxial diamond have been reported recently.  相似文献   
997.
The analysis of longitudinal data with nonignorable dropout remains an active area in biostatistics research. Nonignorable dropout (ND) refers to the type of dropout when the probability of dropout depends on the missing observations at or after the time of dropout. Failure to account for such dependence may result in biased inference. Motivated by a methadone clinic data of longitudinal binary observations with dropouts, we propose a conditional first order autoregressive (AR1) logit model for the outcome measurements. The model is further extended to incorporate random effects in order to account for the population heterogeneity and intra-cluster correlation. The purposed models account for the dropout mechanism by a separate logit model in some covariates and missing outcomes for the binary dropout indicators. For model implementation, we proposed a likelihood approach through Monte Carlo approximation to the Gibbs output that evaluates the complicated likelihood function for the random effect ND model without tear. Finally simulation studies are performed to evaluate the biases on the parameter estimates of the outcome model for different dropout mechanisms.  相似文献   
998.
999.
1000.
An organic–inorganic nanocomposite was prepared via sol–gel processing from 3-(trimethoxysilyl)propyl methacrylate (MAPTMS) and titanium(IV) isopropoxide (TIP) precursors (TiMEMO) in the form of a viscous resin, and used as a binder for the preparation of coloured thickness insensitive spectrally selective (TISS) paints and corresponding solar absorber coatings. The spectral selectivity of TiMEMO-based TISS paints was optimized by varying the concentrations of binder and different pigments: black, coloured (red, green and blue) and aluminium flakes, the latter imparting low thermal emittance, which was correlated to the presence of titanium in the TiMEMO sol–gel host. The formation and the ensuing structure of the sol–gel TiMEMO hybrid was studied in detail and the nanocomposite structure of the TiMEMO binder formed was assessed from infrared and 29Si NMR measurements, which confirmed the formation of Ti–O–Si linkages established after the hydrolysed precursors condensed into a compliant resinous material. XRD measurements provided additional information about the existence of small coherent domains of silsesquioxane units in the sol–gel host. The abrasion resistance of the non-pigmented TiMEMO binder deposited in thin film form on a PMMA substrate was assessed by the Taber test, and its hardness compared with other resin binders which have been used for making TISS paint coatings. The surface properties of the non-pigmented TiMEMO binder and the ensuing TISS paint coatings were determined from contact angle measurements. The results showed that the water contact angles of non-pigmented TiMEMO binder increased from 70° to 125–135° for the corresponding pigmented TISS paint coatings, inferring the influence of surface roughness on surface energy in the presence of pigments. SEM measurements revealed a striking similarity in the surface morphology of the TISS paint coatings with some other surfaces exhibiting the Lotus effect.  相似文献   
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