Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

We investigate a mechanism causing shorting of large area GaSb diodes grown on GaSb substrates using molecular beam epitaxy (MBE). The source of these shorts is determined to be large crystallographic defects on the surface of the diodes that are formed around droplets of gallium ejected from the gallium Knudsen cells during MBE. The gallium droplets cause defects in the crystal structure, and, as the epitaxy continues, the gallium is incorporated into the surrounding material. The shape of the defects is pyramidal with a central void extending from the epi-surface to the gallium core. Processing a GaSb diode with these surface defects results in the top-side contact metal migrating into the defect and shorting the diode. This prevents realization of large area diodes that are critical to applications such as photovoltaics and detectors. The diodes in this study are electrically characterized and the defect formation mechanism is investigated using cross-section transmission electron microscopy and electron dispersive spectroscopy.     

LFMTCN: A Green Ultra-Dense Multi-tier Small Cell Network Using Leader–follower Strategy

Wireless Personal Communications - Design of energy and spectrum-efficient multi-tier small cell network is an emerging research area. This paper has addressed the challenges of power optimization...     

Bootstrapping a weighted linear estimator of the ARCH parameters

Abstract.  A standard assumption while deriving the asymptotic distribution of the quasi maximum likelihood estimator in ARCH models is that all ARCH parameters must be strictly positive. This assumption is also crucial in deriving the limit distribution of appropriate linear estimators (LE). We propose a weighted linear estimator (WLE) of the ARCH parameters in the classical ARCH model and show that its limit distribution is multivariate normal even when some of the ARCH coefficients are zero. The asymptotic dispersion matrix involves unknown quantities. We consider appropriate bootstrapped version of this WLE and prove that it is asymptotically valid in the sense that the bootstrapped distribution (given the data) is a consistent estimate (in probability) of the distribution of the WLE. Although we do not show theoretically that the bootstrap outperforms the normal approximation, our simulations demonstrate that it yields better approximations than the limiting normal.     

Programmable memory in organic field-effect transistor based on lead phthalocyanine

A nonvolatile organic field-effect transistor (OFET) with a polymeric electret as gate insulator and spun cast film of lead phthalocyanine (PbPc) as semiconductor channel is reported. Hysteresis induced by gate–bias stress was exploited to study nonvolatile memory effects. The observation of the hysteresis and memory window is proposed to originate from charge storage in the polymeric electret. The on state retention time for the OFET memory device is more than 5 h and the device can reproduce continuous write–read–erase–read switching cycles.     

Microstructure and properties of lead-free (Bi<Subscript>1/2</Subscript>Na<Subscript>1/2</Subscript>)TiO<Subscript>3 </Subscript>based piezoelectric ceramics doped with different cations

Different cations doped lead-free piezoelectric (Bi_1/2Na_1/2)TiO₃ ceramics with the general formula Na_0.4995Bi_0.4995Ba_0.001Ti_0.998M_0.002O₃ (M = Nb, Ta, and Sb) were fabricated. The effects of processing parameters and doping on phase content, microstructure, dielectric and piezoelectric properties of the materials were discussed. Experimental results show that Nb doped (Bi_1/2Na_1/2)TiO₃ exhibits superior polarization performance over the existing lead-free ceramics with a d₃₃ value of 122 pC/N obtained when poled at 60 kV/cm at room temperature. The best piezoelectric properties were achieved in (Bi_1/2Na_1/2)TiO₃ doped with Ta having a measured d₃₃ value of 164 pC/N for samples poled at 100 °C under the applied field of 50 kV/cm.     

Distributed decision propagation in mobile-agent proximity networks

This paper develops a distributed algorithm for decision/awareness propagation in mobile-agent networks. A time-dependent proximity network topology is adopted to represent a mobile-agent scenario. The agent-interaction policy formulated here is inspired from the recently developed language-measure theory. Analytical results related to convergence of statistical moments of agent states are derived and then validated by numerical simulation. The results show that a single (user-defined) parameter in the agent interaction policy can be identified to control the trade-off between Propagation Radius (i.e. how far a decision spreads from its source) and Localisation Gradient (i.e. the extent to which the spatial variations may affect localisation of the source) as well as the temporal convergence properties.

     

Measuring software dependability by robustness benchmarking

Inability to identify weaknesses or to quantify advancements in software system robustness frequently hinders the development of robust software systems. Efforts have been made to develop benchmarks of software robustness to address this problem, but they all suffer from significant shortcomings. The paper presents the various features that are desirable in a benchmark of system robustness, and evaluates some existing benchmarks according to these features. A new hierarchically structured approach to building robustness benchmarks, which overcomes many deficiencies of past efforts, is also presented. This approach has been applied to building a hierarchically structured benchmark that tests part of the Unix file and virtual memory systems. The resultant benchmark has successfully been used to identify new response class structures that were not detected in a similar situation by other less organized techniques