The assessment of compositional changes in Nimonic PE16 by convergent beam electron diffraction

Lattice parameter changes can be detected by the use of a previously established technique which is based upon computer simulation of HOLZ patterns. This simulation technique is then applied to two precipitation phenomena in Nimonic PE16. Firstly, the growth of gamma prime, γ, precipitates from a solid solution is monitored via the decrease in lattice parameter of the parent phase, and secondly the lattice parameter of coarsened, overaged γ is measured for precipitates sited both at grain boundaries and within grains. The variations thus detected between intergranular and intragranular precipitates are attributed to changes in the Ti/Al ratio due to preferential γ coarsening at the grain boundary. The very subtle compositional changes inferred (～1 at. % Ti) would have been very difficult to establish by chemical analysis, but can be easily measured by convergent beam electron diffraction.     

Imaging and analysis of nanowires

We used vapor-liquid-solid (VLS) methods to synthesize discrete single-element semiconductor nanowires and multicomposition nanowire heterostructures, and then characterized their structure and composition using high-resolution electron microscopy (HRTEM) and analytical electron microscopy techniques. Imaging nanowires requires the modification of the established HRTEM imaging procedures for bulk material to take into consideration the effects of finite nanowire width and thickness. We show that high-resolution atomic structure images of nanowires less than 6 nm in thickness have lattice "streaking" due to the finite crystal lattice in two dimensions of the nanowire structure. Diffraction pattern analysis of nanowires must also consider the effects of a finite structure producing a large reciprocal space function, and we demonstrate that the classically forbidden 1/3 [422] reflections are present in the [111] zone axis orientation of silicon nanowires due to the finite thickness and lattice plane edge effects that allow incomplete diffracted beam cancellation. If the operating conditions are not carefully considered, we found that HRTEM image delocalization becomes apparent when employing a field emission transmission electron microscope (TEM) to image nanowires and such effects have been shown to produce images of the silicon lattice structure outside of the nanowire itself. We show that pseudo low-dose imaging methods are effective in reducing nanowire structure degradation caused by electron beam irradiation. We also show that scanning TEM (STEM) with energy dispersive X-ray microanalysis (EDS) is critical in the examination of multicomponent nanowire heterostructures.     

Very low voltage sputter coating

Very low voltage sputter coating, in the range 175–300 V, has been used to produce finely structured thin films of noble and refractory metals for use in high resolution scanning electron microscopy. There is a marked diminution in the particle size with a decrease in cathode voltage. Although the sputtering times are longer than with conventional diode sputter coating, such times are shorter than those required to produce similar films by Penning or ion-beam sputtering. The refractory metals produce films which are fine grained and suitable for high resolution studies. The method has been used to sputter coat thin layers of aluminium. All attempts at sputtering carbon have failed; the reasons for this are discussed in some detail.     

Grammar engineering for multiple front-ends for Python

In this paper, we describe our experience in grammar engineering to construct multiple parsers and front ends for the Python language. We present a metrics-based study of the evolution of the Python grammars through the multiple versions of the language in an effort to distinguish and measure grammar evolution and to provide a basis of comparison with related research in grammar engineering. To conduct this research, we have built a toolkit, pygrat , which builds on tools developed in other research. We use pygrat to build a system that automates much of the process needed to translate the Python grammars from EBNF to a formalism acceptable to the bison parser generator. We exploit the suite of Python test cases, used by the Python developers, to validate our parser generation. Finally, we describe our use of the menhir parser generator to facilitate the parser and front-end construction, eliminating some of the transformations and providing practical support for grammar modularisation.     

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

Buried‐channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 10⁵ cm² V^?1 s^?1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top‐gate of a dopant‐less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 10¹¹cm^?2, light effective mass (0.09m_e), and high effective g‐factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low‐disorder material platform for hybrid quantum technologies.     

Fully Printed Organic Electrochemical Transistors from Green Solvents

To achieve the full potential of scalable and cost‐effective organic electronic devices, developments are being made in both academic and industry environments to move toward continuous solution‐processing techniques that make use of safe and environmentally benign “green” solvents. In this work, the first example of a transistor device that is fully solution processed using only green solvents is demonstrated. This achievement is enabled through a novel multistage cleavable side chain process that provides aqueous solubility for semiconducting conjugated polymers, paired with aqueous inkjet printing of PEDOT:PSS electrodes, and a solution deposited ion gel electrolyte as the dielectric layer. The resulting organic electrochemical transistor devices operate in accumulation mode and reach maximum transconductance values of 1.1 mS at a gate voltage of ? 1 V. Normalizing the transconductance value to the channel dimensions yields g_m/W = 2200 S m^?1 (µC* = 22 F cm^?1 V^?1 s^?1), making these devices suitable for a range of applications requiring small signal amplification such as transistors, biosensors, and ion pumps. This new material design and device process paves the way toward scalable, safe, and efficient production of organic electronic devices.     

Designing Microgels for Cell Culture and Controlled Assembly of Tissue Microenvironments

Micrometer‐sized hydrogels, termed microgels, are emerging as multifunctional platforms that can recapitulate tissue heterogeneity in engineered cell microenvironments. The microgels can function as either individual cell culture units or can be assembled into larger scaffolds. In this manner, individual microgels can be customized for single or multicell coculture applications, or heterogeneous populations can be used as building blocks to create microporous assembled scaffolds that more closely mimic tissue heterogeneities. The inherent versatility of these materials allows user‐defined control of the microenvironments, from the order of singly encapsulated cells to entire 3D cell scaffolds. These hydrogel scaffolds are promising for moving towards personalized medicine approaches and recapitulating the multifaceted microenvironments that exist in vivo.