Synthesis of Boron Nitride by Self-Propagating Reactions at High Pressure

Peculiarities of the formation of BN in a self-propagating reaction between LiBF₄ and Li₃N have been studied under a wide range of p,T conditions within the region of thermodynamic stability of cBN. Boron nitride crystallized mainly in the form of highly ordered hBN (1700–2100 K), of mesographitic BN (2200–3000 K), or of turbostratic BN (>3000 K). Cubic boron nitride was obtained with a low yield (up to 14 vol%) as a result of precipitation from the metastable eutectic liquid in the BN-Li₃N system. These results give further evidence for an alternative metastable behavior in the BN phase formation under high pressures.     

A neural network model for the wire bonding process

A crucial step in manufacturing microcircuits is the wire bonding process in which a very thin gold wire must be formed to connect two surfaces in the microcircuit. The quality of the wire bond can be measured by visual inspection and a pull test—both of which are high-reliability, high-cost approaches to statistical process control. Westinghouse wanted to develop a high-reliability, low-cost quality assurance system. In this paper, we report on a year-long study to construct a neural network model that is capable of predicting the quality of wire bonds. The results of our modeling efforts reveal that neural networks are useful tools for statistical process control problems.     

Demonstration of Epstein-Barr viral DNA in paraffin-embedded tissues of Burkitt's lymphoma from Argentina using the polymerase chain reaction and in situ hybridization

Burkitt's lymphoma (BL) is the most frequent non-Hodgkin's lymphoma in children in Argentina. Although epidemiologic studies have linked Epstein-Barr virus (EBV) to more than 90% of African BL cases but to only 10-20% of American and French cases, increased EBV-specific antibody titers were demonstrated in 73% of Argentinian patients with BL. To characterize the relationship between EBV and BL in Argentina, we analyzed paraffin-embedded tissues from 16 cases of BL for the presence of EBV DNA using the polymerase chain reaction (PCR) and in situ hybridization (ISH). PCR analysis showed that only 4 of 16 specimens contained the EBV BamW fragment, and these specimens were all from cases diagnosed in 1984. Results of ISH performed with a specific biotinylated DNA probe against the NotI/PstI fragment of EBV correlated with the PCR findings. EBV sequences were detected with ISH in 70-90% of the tumor cells from the 4 positive cases. These data may suggest an epidemic outbreak of EBV-related BL in 1984 superimposed on sporadic cases of BL, for which EBV may not have been an essential factor. This study also demonstrates the value of using molecular techniques on archival tissue to track epidemiologic trends.     

Designing for parallel fuzzy computing

As the number of fuzzy logic applications increases, demand for faster architectures will grow. Our design for a VLSI fuzzy processor uses fuzzy inference techniques that optimize processing time. Preprocessing that reduces the number of rules to be processed, parallel computation of active rule degrees of activation, and scalability are major features of this architecture. The journal issue contains a concise summary of this article. The complete article is linked to Micro's home page on the World Wide Web (http://www.computer.org/pubs/micro/micro.htm)     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

Physicochemical characteristics and leachability of scale and sludge from Bulalo geothermal system, Philippines

Scale and sludge from Bulalo geothermal field, Philippines, have been characterized by whole rock analysis, radioactivity counting, size analysis, light microscopy, scanning electron microscopy, and X-ray diffraction. Their leachability was assessed by regulatory leaching procedures and by sequential extraction. Both scale and sludge consisted mostly of oxides of Si, Al, and Fe with no radionuclides detected. The scale had 10% S content. Sulfides and silicates were important phases in both samples having size ranges from submicron to 2 mm. Geothermal soils at Bulalo have higher than normal soil levels of As, S, Cu, Cr, Zn, and Pb but regulatory leaching tests indicated that these elements are not released. However, the sequential extraction showed that As, Cu, and Zn were leachable under extreme conditions.     

Comparison between normal and reverse thin crystalline silicon solar cells

The newly developed ingot growing techniques, as the three-grain and the columnar multigrain ingot processes, are now offering the possibility of slicing thinner wafers (≤ 100 μm). In this paper we present the results obtained on p type large area (≥ 100 cm²) and 100 μm thick wafers by using both conventional and reverse cell manufacturing technologies.The conventional cells are provided with aluminium or boron BSF plus screen-printed silver mirror or a silver-aluminium net; the reverse cells have a FSF and the deep back junction completely covered by a screen-printed or CVD silver layer.The constructing parameters have been chosen on the base of one and two dimensions modeling and both raw material and devices have been completely characterized.This work shows that very thin wafers do not introduce serious problems for the conventional manufacturing of solar cells. The efficiencies of the normal and of the reverse cells are found to be comparable and are of the same order than those of thicker cells, however at a significant lower cost. The main obtained result has to be related to the demonstration of a cell manufacturing feasibility starting from very thin wafers.     

The effect of residual stresses on brittle and ductile fracture initiation predicted by micromechanical models

The effect of a realistic residual stress field on the predicted initiation of brittle and ductile fracture in a pressure and axially loaded circumferentially cracked pipe is examined using finite element analysis, micromechanical models of fracture initiation, andJ-Q theory. The study confirms that residual stresses contribute to the driving force and reduce fracture loads early in the loading history. In addition, results show that the residual stresses severely alter theJ-value (i.e., fracture toughness) predicted for the onset of brittle fracture. The reason for this decrease is found to be the increase in constraint generated by the residual stress field. In contrast, the effect of residual stresses on the ductile fracture initiation toughness is shown to be negligible. kw]Key words kw]residual stress kw]fracture initiation kw]micromechanics     

Precision measurements of the degradation of semiconductor optoelectronic components

A method, apparatus and results of measurements of the degradation of semiconductor optoelectronic components (light-emitting diodes and photodiodes) are described. The difficulties that occur in such investigations are pointed out. Translated from Izmeritel'naya Tekhnika, No. 10, pp. 33–35, October, 1996.