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排序方式: 共有416条查询结果,搜索用时 15 毫秒
411.
Kinney CA Furlong ET Zaugg SD Burkhard MR Werner SL Cahill JD Jorgensen GR 《Environmental science & technology》2006,40(23):7207-7215
In this study, the presence, composition, and concentrations of organic wastewater contaminants (OWCs) were determined in solid materials produced during wastewater treatment. This study was undertaken to evaluate the potential of these solids, collectively referred to as biosolids, as a source of OWCs to soil and water in contact with soil. Nine different biosolid products, produced by municipal wastewater treatment plants in seven different states, were analyzed for 87 different OWCs. Fifty-five of the OWCs were detected in at least one biosolid product. The 87 different OWCs represent a diverse cross section of emerging organic contaminants that enter wastewater treatment plants and may be discharged without being completely metabolized or degraded. A minimum of 30 and a maximum of 45 OWCs were detected in any one biosolid. The biosolids used in this study are produced by several production methods, and the plants they originate from have differing population demographics, yet the percent composition of total OWC content, and of the most common OWCs, typically did not vary greatly between the biosolids tested. The summed OWC content ranged from 64 to 1811 mg/kg dry weight. Six biosolids were collected twice, 3-18 months apart, and the total OWC content of each biosolid varied by less than a factor of 2. These results indicate that the biosolids investigated in this study have OWC compositions and concentrations that are more similar than different and that biosolids are highly enriched in OWCs (as mass-normalized concentrations) when compared to effluents or effluent-impacted water. These results demonstrate the need to better describe the composition and fate of OWCs in biosolids since about 50% of biosolids are land applied and thus become a potentially ubiquitous nonpoint source of OWCs into the environment. 相似文献
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413.
Hans Gross Iris Keitel Burkhard Costisella 《Advanced Synthesis \u0026amp; Catalysis》1978,320(2):255-260
Synthesis of 3-Substituted 7,8-Dimethyl-1,5-dihydro-2,4-benzdithiepines 7,8-Dimethyl-1,5-dihydro-2,4-benzdithiepines substituted in 3-position are available from the dithiol 1 and aldehydes or acetales. By chlorination of the dithiepin 6 the 3-chloro-dithiepin 3 is formed, which was not available in pure state, but can be transformed in situ with N- or C-nucleophiles into the respective 2 -derivatives. By oxidation of 6 using chloramin T and subsequent reaction with methanol the 3-methoxy derivative 4 is formed via the S-tosyliminocompound 5 . 相似文献
414.
415.
Armin G. Aberle Burkhard Kuhlmann Rüdiger Meyer Andreas Hübner Carsten Hampe Rudolf Hezel 《Progress in Photovoltaics: Research and Applications》1996,4(3):193-204
Inversion-layer solar cells can be fabricated on crystalline silicon in a time- and energy-efficient way. In this article we experimentally investigate inversion layer cells of the type developed in the 1980s at the University of Erlangen. The best cell has an independently confirmed one-sun efficiency of 15.7%, the highest reported to date for this simple cell technology. In order to gain insight into the performance-limiting mechanisms, these cells are compared to p-n junction cells fabricated on identical substrates. Subsequently, the impact of the most important emitter parameters on the performance of both cell types is determined by means of two-dimensional numerical modelling. These simulations reveal that inversion-layer cells can principally produce the same efficiencies (> 23%) as p-n junction cells, provided the emitter parameters are properly adjusted and the front contact is of a sufficiently high quality. Therefore, a research project is presently under way at ISFH aiming at an improvement of inversion-layer cell efficiency above 18%. The basis for these new cells is the fact that silicon nitride films deposited at higher temperatures (∼400°C) demonstrate strongly improved passivation properties compared to the present 250° C silicon nitride films. 相似文献
416.