Full constellation phase detector for carrier recovery in high-order QAM systems

A full constellation phase detector that improves carrier acquisition performance in high-order quadrature amplitude modulation (QAM) is proposed. The weighting function of the phase detector is mathematically derived, and simulated phase detector characteristics are presented for 256QAM. The results of an experimental evaluation are also reported, which show that the carrier recovery loop based on the proposed phase detector has a large frequency acquisition range and low phase tracking error in high-order QAM.     

2.4 GHz continuously variable ferroelectric phase shifters using all-pass networks

Continuously variable ferroelectric (BST on sapphire) phase shifters based on all-pass networks are presented. An all-pass network phase shifter consists of only lumped LC elements, and thus the total size of the phase shifter is kept to less than 2.2 mm /spl times/ 2.6 mm at 2.4 GHz. The tunability (C/sub max//C/sub min/) of a BST interdigital capacitor is over 2.9 with a bias voltage of 140 V. The phase shifter provides more than 121/spl deg/ phase shift with the maximum insertion loss of 1.8 dB and the worst case return loss of 12.5 dB from 2.4 GHz to 2.5 GHz. By cascading two identical phase shifters, more than 255/spl deg/ phase shift is obtained with the maximum insertion loss of 3.75 dB. The loss figure-of-merit of both the single- and double-section phase shifters is over 65/spl deg//dB from 2.4 GHz to 2.5 GHz.     

Efficient dc-free RLL codes for optical recording

We report on new dc-free runlength-limited codes (DCRLL) intended for the next generation of DVD. The efficiency of the newly developed DCRLL schemes is extremely close to the theoretical maximum, and as a result, significant density gains can be obtained with respect to prior art coding schemes. With a newly developed DCRLL (d=2) code we can achieve a 9% higher overall rate than that of DVD's EFMPlus.     

A 60-W Multicarrier WCDMA Power Amplifier Using an RF Predistorter

In this brief, we present a 60-W power amplifier that is linearized using an RF predistorter for multicarrier wideband code-division multiple-access (WCDMA) applications. The proposed RF predistorter is fully composed of RF or analog circuits, and it has a moderate memory effect compensation capability using a delayed third-order intermodulation (IM3) component path. It also includes the IM5 generation circuits and a compact IM3 generator that is capable of autocanceling for the fundamental component. The proposed RF predistorter was implemented and applied to a 60-W high-power WCDMA amplifier. For a four-carrier downlink WCDMA signal, the RF predistorter improved the adjacent channel leakage power ratio at a 5-MHz offset by 6.19 dB at an average output power of 48 dBm. The total efficiency of the system is as high as 13.6% at the same output power level. At an output power level of 60 W, the linearized power amplifier complies with the linearity specification of the WCDMA system.     

Self‐Healing Reduced Graphene Oxide Films by Supersonic Kinetic Spraying

The industrial scale application of graphene and other functional materials in the field of electronics has been limited by inherent defects, and the lack of simple deposition methods. A simple spray deposition method is developed that uses a supersonic air jet for a commercially available reduced graphene oxide (r‐GO) suspension. The r‐GO flakes are used as received, which are pre‐annealed and pre‐hydrazine‐treated, and do not undergo any post‐treatment. A part of the considerable kinetic energy of the r‐GO flakes entrained by the supersonic jet is used in stretching the flakes upon impact with the substrate. The resulting “frozen elastic strains” heal the defects (topological defects, namely Stone‐Wales defect and C₂ vacancies) in the r‐GO flakes, which is reflected in the reduced ratio of the intensities of the D and G bands in the deposited film. The defects can also be regenerated by annealing.     

Ag/Ni Metallization Bilayer: A Functional Layer for Highly Efficient Polycrystalline SnSe Thermoelectric Modules

The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni₃Sn and Ni₃Sn₂) and Ni_5.63SnSe₂] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10^?4 Ω cm²) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules.     

An Intelligent Product Recommendation Model to Reflect the Recent Purchasing Patterns of Customers

Mobile Networks and Applications - This study suggests a new product recommendation model to reflect the recent purchasing patterns of customers. There are many methods to measure the similarity...     

Inverse modeling and its application in the design of high electronmobility transistors

An inverse modeling technique is introduced to determine the structural and physical parameters of HEMT from the desired data for maximum transconductance. The technique is based on the availability of analytical expressions describing the electron carrier concentration, the current, the transconductance, the capacitances and the unity current gain frequency of a HEMT. Empirical formulae are obtained that relate the maximum transconductance to the doped AlGaAs thickness, spacer layer thickness, dopant density and aluminum mole fraction. The technique is applied to the design of a HEMT and shows good agreement with the experimental data     

A Multi‐Functional Highly Efficient Upconversion Luminescent Film with an Array of Dielectric Microbeads Decorated with Metal Nanoparticles

Upconversion nanoparticles (UCNPs) have been integrated with photonic platforms to overcome the intrinsically low quantum efficiency limit of upconversion luminescence (UCL). However, platforms based on thin films lack transferability and flexibility, which hinders their broader and more practical application. A plasmonic structure is developed that works as a multi‐functional platform for flexible, transparent, and washable near‐infrared (NIR)‐to‐visible UCL films with ultra‐strong UCL intensity. The platform consists of dielectric microbeads decorated with plasmonic metal nanoparticles on an insulator/metal substrate. Distinct improvements in NIR confinement, visible light extraction, and boosted plasmonic effects for upconversion are observed. With weak NIR excitation, the UCL intensity is higher by three orders of magnitude relative to the reference platform. When the microbeads are organized in a square lattice array, the functionality of the platform can be expanded to wearable and washable UCL films. The platform can be transferred to transparent, flexible, and foldable films and still emit strong UCL with a wide viewing angle.     

Investigation of 4H-SiC MOS capacitors annealed in diluted N2O at different temperatures

Thermally grown oxide on 4H-SiC has been post-annealed in diluted N₂O (10% N₂O in N₂) at different temperatures from 900 to 1100 °C. The quality of the nitrided oxide and the SiO₂/4H-SiC interface was investigated by AC conductance and high frequency C-V measurements based on Al/SiO₂/4H-SiC metal-insulator-semiconductor (MOS) structure. It is found that N₂O annealing at 1000 °C produces the lowest interface state density, though the difference is not so significant when compared to the other samples annealed at 900 and 1100 °C. These results can be explained by the high temperature dynamic decomposition process of N₂O. By fitting the AC conductance data, it is found that higher temperature nitridation increases the capture cross-section of the interface traps.