Stretchable,Transparent Zinc Oxide Thin Film Transistors

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor‐based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.     

Fast Super‐Resolution Algorithm Based on Dictionary Size Reduction Using k‐Means Clustering

This paper proposes a computationally efficient learning‐based super‐resolution algorithm using k‐means clustering. Conventional learning‐based super‐resolution requires a huge dictionary for reliable performance, which brings about a tremendous memory cost as well as a burdensome matching computation. In order to overcome this problem, the proposed algorithm significantly reduces the size of the trained dictionary by properly clustering similar patches at the learning phase. Experimental results show that the proposed algorithm provides superior visual quality to the conventional algorithms, while needing much less computational complexity.     

Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells

The properties of polarons in zinc-blende and wurtzite GaN/AlN quantum wells with Fr(o|¨)hlich interaction Hamiltonians are compared in detail.The energy shifts of polarons at ground state due to the interface(IF), confined(CO) and half-space phonon modes are calculated by a finite-difference computation combined with a modified LLP variational method.It is found that the two Fr(o|¨)hlich interaction Hamiltonians are consistent with each other when the anisotropic effect from the z-direction and the x-y plane is neglected.The influence of the anisotropy on the polaron energy shifts due to the IF phonon modes for a smaller well width or due to the CO phonon modes for a moderate well width is obvious.In addition,the built-in electric field has a remarkable effect on the polaron energy shifts contributed by the various phonon modes.     

Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System

In this paper, we have verified stress root caused by lightning surge in High voltage BJT based line driver of ADSL telecommunication and created failure mechanism. To reproduce damages in Line driver, we have applied STD surge waveform in operating condition, which is specified in IEC-6000-4-5, to component and board level. Visual isolation for Damage root was conducted with Real-time Electrical Stress Analysis (RTESA) utilizing Photon Emission Microscopy (PEM). The surge made with input of Tx output created junction breakdown of amplifier, which is made of HVBJT cells, and also caused current crowding from Vcc (supply voltage). In case of Positive pulse, current crowding was observed from between Collector and Vcc (+)12V. For negative pulse, at between Emitter and Vee (−)12V, current crowding was found. For both cases, device damage level was the same. All of these could be considered as transient latchup phenomenon created in BJT cell. Applying temporary clamping diode to line driver Tx, we have conducted Board level surge injection test. As a result, with the correlation between surge level from component level reproduction test and the one from system level, we have decided field lightning surge damage level and set up line driver protection margin.     

Effect of multiple reflows on interfacial reaction and shear strength of Sn-Ag electroplated solder bumps for flip chip package

The effect of displacement rate and intermetallic compound (IMC) growth on the shear strength of electroplated Sn-2.5Ag (in wt.%) flip chip solder with Cu under-bump metallization (UBM) were investigated after multiple reflows. Cu₆Sn₅ IMC was formed at the interface after one reflow. After five reflows, two different IMC layers, consisting of a scallop-shaped Cu₆Sn₅ phase and a planar Cu₃Sn phase, and their thicknesses increased with increasing reflow number up to 10. The shear strengths peaked after four reflows, and then decreased with increasing reflow number. Increasing displacement rate increased the shear force. The tendency toward brittle fracture characteristics was intensified with increasing displacement rate and reflow number.     

Panorama field rendering with scene depth estimation

A novel approach to image-based modelling and rendering is proposed. A set of randomly placed panoramas and omnidirectional depth information of the surrounding scene are used to generate an output image at a vantage viewpoint. Implementation results show that the proposed approach achieves smooth walkthrough at a realtime     

Mergers and Acquisitions in the Telecommunications Industry: Myths and Reality

This paper investigates how market participants react to mergers and acquisitions (M&As) involving telecommunications companies. The empirical evidence suggests that such activities convey bad news to the market. This is consistent with the synergy trap hypothesis and extant empirical findings of value‐reducing diversification strategies in recent literature. The evidence also indicates that a cross‐border, rather than a domestic M&A deal, is the main driver of the negative market reaction. Further, our evidence of negative impacts on the bidder's business after an M&A reinforces our main finding that market participants, on average, perceive M&A activities to be detrimental to shareholder value. This suggests that value creation or synergy through an M&A deal is not warranted even though it can generate an increase in size of the firm.     

Digital Laser Micropainting for Reprogrammable Optoelectronic Applications

Structural coloration is closely related to the progress of innovative optoelectronic applications, but the absence of direct, on-demand, and rewritable coloration schemes has impeded advances in the relevant area, particularly including the development of customized, reprogrammable optoelectronic devices. To overcome these limitations, a digital laser micropainting technique, based on controlled thin-film interference, is proposed through direct growth of the absorbing metal oxide layer on a metallic reflector in the solution environment via a laser. A continuous-wave laser simultaneously performs two functions—a photothermal reaction for site-selective metal oxide layer growth and in situ real-time monitoring of its thickness—while the reflection spectrum is tuned in a broad visible spectrum according to the laser fluence. The scalability and controllability of the proposed scheme is verified by laser-printed painting, while altering the thickness via supplementary irradiation of the identical laser in the homogeneous and heterogeneous solutions facilitates the modification of the original coloration. Finally, the proof-of-concept bolometer device verifies that specific wavelength-dependent photoresponsivity can be assigned, erased, and reassigned by the successive application of the proposed digital laser micropainting technique, which substantiates its potential to offer a new route for reprogrammable optoelectronic applications.     

受激布里渊散射(SBS)中的三类介质

介绍了目前使用的三类受激布里渊散射介质的化学结构及其SBS性能．并且分析了受激布里渊散射对介质的要求，