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11.
Cheol-Min Park Byung-Hyuk Min Jae-Hong Jun Juhn-Suk Yoo Min-Koo Han 《Electron Device Letters, IEEE》1997,18(1):16-18
We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained 相似文献
12.
Kwang Soo Lee In Soo Park & Dong Sun Lee 《International Journal of Food Science & Technology》1996,31(1):7-13
The aim of this study was to design a modified atmosphere package for a mixed vegetable salad consisting of 75 g of cut carrot, 55 g of cut cucumber, 20 g of sliced garlic and 50 g of whole green pepper. Respiration data of all the components were combined with film permeability data to predict package atmospheres and design optimal packages for experimental testing for improved shelf-life of the produce. The optimal package avoided minimum O2 and maximum CO2 tolerance limits, and chilling injury temperatures for any component. A pouch form package made of 27 mm low density polyethylene developed a modified atmosphere of 2.0–2.1% O2 and 5.5–5.7% CO2 , which was beneficial for all components and provided better quality retention than other test packages. 相似文献
13.
A neural network-based power system stabilizer (neuro-PSS) is designed for a generator connected to a multi-machine power system utilizing the nonlinear power flow dynamics. The use of power flow dynamics provides a PSS for a wide range of operation with reduced size neural networks. The neuro-PSS consists of two neural networks: neuro-identifier and neuro-controller. The low-frequency oscillation is modeled by the neuro-identifier using the power flow dynamics, then a generalized backpropagation-through-time (GBTT) algorithm is developed to train the neuro-controller. The simulation results show that the neuro-PSS designed in this paper performs well with good damping in a wide operation range compared with the conventional PSS 相似文献
14.
Jae-Duk Lee Jeong-Hyuk Choi Donggun Park Kinam Kim 《Electron Device Letters, IEEE》2003,24(12):748-750
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells. 相似文献
15.
Min-Seok Park Vladislav P. Vislovskiy Jong-San Chang Yong-Gun Shul Jin S. Yoo Sang-Eon Park 《Catalysis Today》2003,87(1-4):205-212
Alumina-supported vanadium oxide, VOx/Al2O3, and binary vanadium–antimony oxides, VSbOx/Al2O3, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by SBET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO2 pulse methods. VSbOx/Al2O3 exhibited enhanced catalytic activity and especially on-stream stability compared to VOx/Al2O3 catalyst. Incorporation of antimony into VOx/Al2O3 increased dispersion of active VOx species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V0.43Sb0.57Ox/Al2O3 system. 相似文献
16.
A new discontinuous modulation method based on space-vector control is proposed and analyzed. The proposed technique employs a pulse-dropping method and is designed in the time domain. It features a very wide modulation range while maintaining the required waveform qualities and switching numbers in the overmodulation region. Since the modulation method and modulation index equation are simple, the proposed technique can be easily implemented by software and is applicable to the overmodulation region in ac motor drives. The performance indexes are discussed and experiments have been performed. 相似文献
17.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献
18.
Ha J.H. Kim S.W. Seol Y.S. Park H.K. Choi S.H. 《Semiconductor Manufacturing, IEEE Transactions on》1996,9(2):289-291
The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF 6/Ar mixtures. It was found that while the plug loading effect is independent of varying SF6/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology 相似文献
19.
K.-H. Zum Gahr R. Telle B. Zimmerlin S.-H. Park 《Materialwissenschaft und Werkstofftechnik》1992,23(9):329-338
Influence of grain size on mechanical properties and dry oscillating sliding wear of Al2O3-ceramics Specimens with average grain sizes varying between about 0.8 μm and 12 μm were produced by cold isostatic pressing of high purity Al2O3-powder followed by sintering between 1300°C and 1700°C. Hardness, Young's modulus, bending strength and fracture toughness were measured as a function of average grain sizes. Tribological tests were carried out on the different microstructures at normal laboratory air and room temperature by using a ring-on-block tribometer. Experimental results showed the dependence of mechanical properties on grain size, hardness and bending strength obeying a Hall-Petch type relation, approximately. Coefficient of friction was relatively independent of grain size under the test conditions used. However, wear intensity increased substantially if a critical grain size was surpassed. This was due to a change in mechanisms of material removal which was confirmed by scanning electron microscopical studies of the worn surfaces. 相似文献
20.
The Error-in-Variables Model (EVM) applies to a large class of problems in parameter estimation in which there is error in all the variables. This property makes it of more general applicability than the widely used technique of ordinary Least Squares. While there is a voluminous literature on EVM there is nothing on a general method for designing experiments when EVM applies. In this paper we present an extension of the concept of D-optimality to provide such a general method. It is illustrated by applying it to the estimation of copolymer reactivity ratios and to fitting an ellipse. 相似文献